• Analytical Science and Technology
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• v.23 no.2
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• pp.103-108
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• 2010

Single crystals of $ZnWO_4$ with [100], [010] and [001] directions were successfully grown by the Czochralski method. The seed crystals for the single crystal growth of $ZnWO_4$ could be induced by the crystal growth using platinum wires applied by the capillary action from the melt. The growth conditions in each direction were investigated in terms of the variations of rotation speed, pulling rate and diameter of the grown crystals. The formation of cracking in the grown crystals during the cooling process could be prevented by annealing effect. The growth directions of the grown crystals were determined using Laue back reflection. The microscopic characteristics of the grown crystals in each direction were discussed, and their physical properties were evaluated for hardness, thermal expansion coefficients and dielectric constants.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.620-626
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• 1996

$LiNbO_{3}$ single crystals were grown using a self-designed radio-frequency heating Czochralski crystal grower. Congruently melting composition was used and the optimum growth conditions were established. The compensated power control method was very effective to control the outer diameter of the crystal ingots within ${\pm}5\;%$. Scanning electron microscopy was performed to characterize the effect of the $Mg^{2+}$ ions on the formation of the ferroelectric domain in $LiNbO_{3}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.384-392
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• 1997

Potassium lithium niobate(KLN) single crystal for a nonlinear-optic material, which changes the wavelength of lasers, has a ferroelectric tetragonal tungsten bronze structure at room temperature. It has been very hard to get single crystals of good quality due to the cracks during cooling process. In order to investigate the composition change due to the evaporation of solution during the growth, the thermogravimetric analysis was carried out. In atmospheric condition at $1000^{\circ}C$ which is about $10^{\circ}C$ higher than the crystal growing temperature, the weight change was negligible amount of $1.46{\times}10^{-5}$g/($\textrm{cm}^2$hr). By using both the Pt plate as the nucleation site and the slow cooling method with temperature fluctuation, KLN single crystal of good quality of size 1 cm could be obtained. The phase transition temperature was $490^{\circ}C$, which was higher than that reported by other researchers of the other composition. The optical anisotropy due to the absorption of OH-band exists in the range of IR.

• Korean Journal of Crystallography
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• v.3 no.1
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• pp.37-43
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• 1992

KTiOP04 is a nonlinear optical crystal which is most widely used for frequency doubling of the radiation of Nd : YAG laser. In the experiment, sin ale crystals of KTiOP04 were grown by TSSG technique using 3K2W04·P2O5 flux. Low temperature gradient furnace suitable for KTP single crystal growth was used. Seed crystal was placed at the surface of the solution for the purpose of better observation of the growing crystals and the possibility of diameter control. Solution included 66.7mol% KTiOP04 for all experiments and its saturation temperature was 1020℃. The conditions of single crystal growth were as follows: cooling rate 0.2℃/h, crystal rotation rate 50rpm, c -axis seed. Using these conditions, single crystals up to 23 ×25×25mm3 have been groan from about 100cc solution. We have also observed a change in the crystal growth habit which resulted in the formation of large (201) faces and small (100) faces. And some crystals have (101) faces.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.187-196
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• 1997

Oxygen transfer in silicon melts during crystal growth under vertical magnetic fields is investigated numeriaclly and experimentally. A three-dimensional numerical simulation, including melt convection and oxygen transport, is carried out to understand how oxygen transfers in the melt under magnetic fields. Oxygen concentrations in single silicon crystals grown from the melt under these magnetic fields are experimentally measured by using an infrared absoption technique. The rusults obtained are compared to results from a numerical simualtion. An anomalous increase is observed in the oxygen concentration of the grown crystals under a magnetic field of about 0/03 tesla. The cause of this anomaly is identified as Benard instability, since the temperature at the bottom of the crucible is higher than that at interface. When the temperature at the bottom is decreased, the Benard cell can be removed, and a monotonical decrease in the oxygen concentration in the single crystals can be observed.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.399-421
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• 1996

(1) The solute distribution mechanism was analyzed for the Si0.95Ge0.05 single crystal fiber by u-PD method. (2) The steady-state solutions were obtained for the molten zone and the capillary zone. (3) The effect of the convection in the molten zone on partitioning was not significant for many cases. (4) Intermediate transient rise of Ge was shown by the sudden change of the growth velocity or molten zone height. (5) Periodic compositional modulation can be designed by using the intermediate transient.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.424-431
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• 1999

The reproducibility of successive growth of $Bi_{12}TiO_{20}$ (BTO) single crystlas using a top-seeded solution growth (TSSG) pulling method was evalutated by measuring the lattice constants and their standard deviations. A substantial phase diagram in the region close to the stoichiometric BTO was established expermentally for this purpose, and the existence of a retrograde solid solution close to a BTO was clarified. It was emphasized that a starting solution, with a 10.0~10.1 mol% $TiO_{2}$ concentration, results in large single crystals with a highly homogeneous lattice constant of within ${\pm}1{\times}10^{-4}\AA$, when the solidified fraction of the grown crystal is less than about 45 %. A wavelength dispersion of refractive index was measrued for the first time, and it was verified that the refractive index of BTO is larger than that of BSO($Bi_{12}TiO_{20}$), allowing the voltage sensitivity of EOS higher than the case with BSO as a probe head.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.197-201
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• 2010

$ZnWO_4$ nanocrystallines were prepared from polymeric complex method using microwave irradiation. The average nanocrystalline sizes were 18~25 nm showing an ordinary tendency to increase with the temperatures from 400 to $600^{\circ}C$. Bulk type single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The effect of the growth parameters, such as the rotation speed, pulling rate and diameter of the grown crystals, were examined. The hardness, thermal expansion coefficients and dielectric constants of the crystals were evaluated.

• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.249-256
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• 1994

By surface structure and X-ray topographic observation, growth mechanism of NAB single crystal grown by TSSG technique using a BaB4O7 flux was studied. Surface structure of grown crystals were investigated by optical microscope. Growth history and crystal defects included within grown crystal were investigated using X-ray topography. The {001} faces were grown by 2-D nucleation growth. As decreasing cooling rate, growth mechanism of {111} and {11} was changed from 2-D nucleation growth to the growth by screw dislocation. Only surface striations developed parallel to a-axis were observed on {010} faces. Growth sector of NAB crystals were divided into {001}, {111}, {010}, {021}, {11}. The inclusion which was usually trapped between {001} faces was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.124-127
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• 2003

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnance. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound excition ($D^{\circ}$,X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.