• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.5-8
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• 2002

Hot carrier induced device degradation is observed in thin-film, gate-all-around SOI transistor under DC stress conductions. We observed the more significant device degradation in GAA device than general single gate SOI device due to the degradation of edge transistor. Therefore, it is expected that the maximum available supply voltage of GAA transistor is lower than that o( bulk MOSFET or single gale SOI device.

• Journal of Power Electronics
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• v.10 no.4
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• pp.365-373
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• 2010

This paper proposes a hybrid single carrier sinusoidal modulation suitable for multiphase multilevel inverters. Multiphase multilevel inverters are controlled by hybrid modulation to provide multiphase variable voltage and a variable frequency supply. The proposed modulation combines the benefits of fundamental frequency modulation and single carrier sinusoidal modulation (SC-SPWM) strategies. The main characteristics of hybrid modulation are a reduction in switching losses and improved harmonic performance. The proposed algorithm can be applied to cascaded multilevel inverter topologies. It has low computational complexity and it is suitable for hardware implementations. SC-SPWM and its base modulation design are implemented on a TMS320F2407 digital signal processor (DSP). A Complex Programmable Logic Device realizes the hybrid PWM algorithm and it is integrated with a DSP processor for hybrid SC-SPWM generation. The feasibility of this hybrid modulation is verified by spectral analysis, power loss analysis, simulation and experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.53-53
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• 2010

Graphene comes into the spotlight as an emergent device material on account of its high carrier mobility reflecting its massless Dirac fermion behavior. Chemical technique to control reversibly the carrier concentration of semiconducting graphene for the achievement of a large-area graphene device has been strongly required. Here we show that the adsorptions of a metal and a molecule can manipulate the carrier concentration of single-layer graphene, epitaxially grown on SiC, which was directly observed using angle-resolve photoemission spectroscopy. These results will shed light on the researches for the very large scale integration of a graphene device. Furthermore, the carrier concentration changes can be applied to a highly sensitive gas sensor or a detector for an specific binding between an antigen and an antibody.

• Polymer(Korea)
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• v.26 no.4
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• pp.543-550
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• 2002

We have synthesized a novel carrier transporting copolymer having triphenylamine moiety as a hole transporting unit and triazine moiety as an electron transporting unit in the polymer side chain. Single-layered organic electroluminescent (EL) devices consisted of ITO/copolymer and emitting materials (DCM, coumarin 6, DPvBi)/Al exhibited maximum external quantum efficiency when the ratio of hole transporting unit and electron transporting unit is 6:4 and the content of emitting material is 30 wt%. Especially, the devices emitted the light of red (620 nm), green (520 nm) and blue (450 nm) corresponding to the emitting materials, respectively. A maximum luminance of ITO/copolymer (6:4) and DCM (30 wt%)/Al EL device was about 500 cd/$m^2$ at a DC drive voltage of 12V.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.32 no.6
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• pp.205-210
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• 1983

This paper presents a steady-state computer solution of the fundamental semiconductor one-dimensional transport equations, describing a single (metal-semiconductor) contact device, involving only one type of charge carrier. The computations are conveniently made by the

• Journal of International Academy of Physical Therapy Research
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• v.10 no.2
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• pp.1774-1778
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• 2019

Background : Methods of wearing a baby carrier have suggested; however, there have been no studies suggesting ideal ways. Objective : To investigate muscular fatigue and balance of the waist during baby carrier are worn on the front, the side, and the back of the body. Design: Randomized controlled clinical trial (single blind) Methods : The subjects of this study were 20 healthy men and women in their 20s, who underwent tests of muscular fatigue and balance of the waist bones based on types of wearing baby carrier. Electromyogram (EMG) patches were attached to the L2 and the L4 for testing muscular fatigue, while a device for measuring proprioceptive senses was used to assess balance ability. The measurements were performed before wearing the baby carrier and after 30 minutes of normal walking. The methods of wearing the baby carrier included wearing on the front, the side, and the back of the body. Results : The time taken to adjust the balance was shorter than other types of wearing during the baby carrier were worn on the side, and the ratio of lumbar flexion and relaxation was shown insignificant. Conclusions : These results suggested that wearing the carriers on the side was most effective on reducing fatigue and enhancing balance ability of the waist.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.207-207
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• 2006

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport(PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth Grown 2"-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about $10^{17}/cm^3$ was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal without definitely exhibited lower carrier concentration and lower microplpe density as well as reduced growth rate.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.4
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• pp.325-336
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• 2013

FlashLinQ, one of the typical D2D communication systems developed by Qualcomm, considers a single-tone communication based distributed channel-aware link scheduling method to realize the link scheduling process with low control overheads. However, considering the frequency selective fading effect of practical multi-path channel, the single-tone based SIR estimation causes a critical scheduling error problem because the received single-tone signal has quite different channel gain at each sub-carrier location. In order to overcome this problem, we propose a novel link scheduling method based on CAZAC (Constant Amplitude Zero Auto-Correlation) sequence for D2D communication system. In the proposed method, each link has a unique offset value set for the generation of CAZAC sequences. CAZAC sequences with the cyclic offsets are transmitted using multiple sub-blocks in the entire bandwidth, and then each device can obtain nearly full-band SIR using a good cyclic cross-correlation property of CAZAC sequence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.232-232
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• 2006

SiC single crystal Ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of $2{\mu}m/h$ N-type 2"-SIC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below $10^{17}/cm^3$ were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal Ingot grown on new SiC Seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.