• 제목/요약/키워드: Single balanced mixer

검색결과 54건 처리시간 0.023초

2.45GHz CMOS Up-conversion Mixer & LO Buffer Design

  • Park, Jin-Young;Lee, Sang-Gug;Hyun, Seok-Bong;Park, Kyung-Hwan;Park, Seong-Su
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권1호
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    • pp.30-40
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    • 2002
  • A 2.45GHz double-balanced modified Gilbert-type CMOS up-conversion mixer design is introduced, where the PMOS current-reuse bleeding technique is demonstrated to be efficient in improving conversion gain, linearity, and noise performance. An LO buffer is included in the mixer design to perform single-ended to differential conversion of the LO signal on chip. Simulation results of the design based on careful modeling of all active and passive components are examined to explain in detail about the characteristic improvement and degradation provided by the proposed design. Two kinds of chips were fabricated using a standard $0.35\mu\textrm$ CMOS process, one of which is the mixer chip without the LO buffer and the other is the one with it. The measured characteristics of the fabricated chips are quite excellent in terms of conversion gain, linearity, and noise, and they are in close match to the simulation results, which demonstrates the adequacy of the modeling approach based on the macro models for all the active and passive devices used in the design. Above all the benefits provided by the current-reuse bleeding technique, the improvement in noise performance seems most valuable.

발룬 내장형 이중대역 하향 변환 믹서 설계 및 제작 (Design of Double Bond Down Converting Mixer Using Embeded Balun Type)

  • 이병선;노희정;서춘원
    • 조명전기설비학회논문지
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    • 제22권6호
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    • pp.141-147
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    • 2008
  • 본 논문에서는 화합물 반도체 및 CMOS 공정을 이용하여 수신기에서 주파수를 하향 변환하는 수신믹서를 설계하였다. 주파수 하향변환 믹서의 기본적인 이론과 구조에 대해 살펴보고 이중평형 믹서 구조와 광대역 특성을 얻기위해 매칭회로 대신 고주파와 국부발진기의 입력단에 싱글엔드 신호를 차분신호로 변환하기 위한 능동발룬을 결합한 믹서회로를 화합물과 CMOS 공정으로 설계한다. CMOS 공정을 이용하여 제작한 능동발룬 내장 믹서는 $2{\sim}6[GHz]$ 대역에서 1[dB] 이하의 이득오차와 $3[^{\circ}]$ 이하의 위상오차를 가지며 $2{\sim}6[GHz]$ 대역에서 변환이득 $-1{\sim}-6[dB]$ 특성을 얻었다. 모의실험 결과 화합물 공정을 이용하여 능동 발룬을 결합한 믹서는 $2{\sim}6[GHz]$ 주파수대역에서 $-2[dBm]$의 국부발진기 입력에 대해 약 7[dB]의 변환이득과 5.8[GHz]에서 -10[dBm]의 입력 P1[dB]특성을 나타낸다.

An MMIC Broadband Image Rejection Downconverter Using an InGaP/GaAs HBT Process for X-band Application

  • Lee Jei-Young;Lee Young-Ho;Kennedy Gary P.;Kim Nam-Young
    • Journal of electromagnetic engineering and science
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    • 제6권1호
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    • pp.18-23
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    • 2006
  • In this paper, we demonstrate a fully integrated X-band image rejection down converter, which was developed using InGaP/GaAs HBT MMIC technology, consists of two single-balanced mixers, a differential buffer amplifier, a differential YCO, an LO quadratue generator, a three-stage polyphase filter, and a differential intermediate frequency(IF) amplifier. The X-band image rejection downconverter yields an image rejection ratio of over 25 dB, a conversion gain of over 2.5 dB, and an output-referred 1-dB compression power$(P_{1dB,OUT})$ of - 10 dBm. This downconverter achieves broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 60 mA from a 3-V supply.

이중대역 무선랜용 능동발룬 내장 광대역 믹서 설계 (Broadband Mixer with built-in Active Balun for Dual-band WLAN Applications)

  • 이강호;구경헌
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.261-264
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    • 2005
  • This paper presents the design of a down-conversion mixer with built-in active balun integrated in a $0.25\;{\mu}m$ pHEMT process. The active balun consists of series-connected common-gate FET and common-source FET. The designed balun achieved broadband characteristics by optimizing gate-width and bias condition for the reduction in parasitic effect. From DC to more than 6GHz, the active balun shows the phase error of less than 3 degree and the gain error of less than 0.4 dB. A single-balanced down-conversion mixer with built-in broadband active balun has been designed with optimum width, load resistor and bias for conversion gain and without any matching component for broadband operating. The designed mixer whose size of including on-chip bias circuit is $1\;mm{\times}1\;mm$ shows the conversion gain of better than 7 dB from 2 GHz to 6 GHz and $P_{1dB}$ of -10 dBm at 5.8 GHz

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능동 역지향성 배열 안테나용 공액 위상변위기 (Phase Conjugator for Retrodirective Array Antenna Applications)

  • 전중창;정덕수;이병로;탁한호
    • 한국전자파학회논문지
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    • 제16권2호
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    • pp.134-138
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    • 2005
  • 본 논문에서는 능동 역지향성 배열 안테나용의 마이크로파 공액 위상변위기에 관한 새로운 구조를 제안하였다. 본 논문에서 제안된 공액 위상변위기는 Single-Balanced 혼합기를 응용한 것으로, 일반적인 혼합기와 달리, LO 및 RF 신호의 결합과 임피던스 매칭의 복잡성을 줄이기 위해서 2-포트 구조를 채택하였으며, 병렬 연결된 두 개의 Single-Ended 혼합기에 180도 위상반전 회로를 삽입하여, 공액 위상변위기 설계에서 가장 큰 문제가 되는 IF 출력단의 RF 누설성분을 억제하였다. 동작 주파수는 LO 4 GHz, RF 2.01 GHz, IF 1.99 GHz이다. 제작된 공액 위상변위기는 9 dBm의 LO전력에서 변환손실은 -7 dB, 1-dB 억압점 15 dBm의 특성을 보인다. 공액 위상 변위기의 가장 중요한 파라미터인 RF/IF 격리도는 25 dB에 달한다.

무선랜을 위한 5.25GHz 이미지 제거 저 잡음 증폭기 및 믹서 설계 (5.25GHz Image Rejection Low Noise Amplifier and Mixer for Wireless LAN)

  • 이준재;공동호;추성중;박정호
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.893-896
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    • 2005
  • This paper describes Low Noise Amplifier(LNA) and Single Balanced Mixer(SBM) with monolithic image rejection notch filter using 0.5um MESFET process. LNA, Notch filter, and SBM were integrated on a chip. This chip does not need off chip SAW filter, thereby reducing the overall cost and system volume. The LNA with Notch filter provides a gain of 15dB, noise figure of 1.2dB, and image rejection ratio of -74dB. The SBM has a conversion gain of 6dB.

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밀리미터파용 고온초전도 다운-컨버터의 제작 및 고주파 특성 평가 (High-$T_{c}$ Superconducting down-converter for Millimeterwave)

  • 강광용;김호영;김철수;곽민환
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2002년도 학술대회 논문집
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    • pp.358-361
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    • 2002
  • The millirneterwave high-T$_{c}$ superconducting(HTS) down-converter sub-system with the HTS/III-V integrated mixer as the central device is demonstrated first. The constituent components of HTS down-converter sub-system such as a single balanced type integrated mixer with rat-race coupler, a cavity type bandpass filter (26 GHz), and a HTS planar lowpass filter(1 GHz), semiconductor LNA and IF-power amplifier, a driving electronic module for A/D converter, and a Stirling type mini-cooler module were combined into an International stand- and rack of 19-inch. From the RF(-61 dBm, 26.5GHz)and LO signal(-1 dBm, 25.6 GHz), IF signal(0dBm, 0.9 GHz) agreed with simulated results is obtained.d.

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A Compact Ka-Band Doppler Radar Sensor for Remote Human Vital Signal Detection

  • Han, Janghoon;Kim, Jeong-Geun;Hong, Songcheol
    • Journal of electromagnetic engineering and science
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    • 제12권4호
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    • pp.234-239
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    • 2012
  • This paper presents a compact K-band Doppler radar sensor for human vital signal detection that uses a radar configuration with only single coupler. The proposed radar front-end configuration can reduce the chip size and the additional RF power loss. The radar front-end IC is composed of a Lange coupler, VCO, and single balanced mixer. The oscillation frequency of the VCO is from 27.3 to 27.8 GHz. The phase noise of the VCO is -91.2 dBc/Hz at a 1 MHz offset frequency, and the output power is -4.8 dBm. The conversion gain of the mixer is about 11 dB. The chip size is $0.89{\times}1.47mm^2$. The compact Ka-band Doppler radar system was developed in order to demonstrate remote human vital signal detection. The radar system consists of a Ka-band Doppler radar module with a $2{\times}2$ patch array antenna, baseband signal conditioning block, DAQ system, and signal processing program. The front-end module size is $2.5{\times}2.5cm^2$. The proposed radar sensor can properly capture a human heartbeat and respiration rate at the distance of 50 cm.

An Integrated High Linearity CMOS Receiver Frontend for 24-GHz Applications

  • Rastegar, Habib;Ryu, Jee-Youl
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권5호
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    • pp.595-604
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    • 2016
  • Utilizing a standard 130-nm CMOS process, a RF frontend is designed at 24 GHz for automotive collision avoidance radar application. Single IF direct conversion receiver (DCR) architecture is adopted to achieve high integration level and to alleviate the DCR problem. The proposed frontend is composed of a two-stage LNA and downconversion mixers. To save power consumption, and to enhance gain and linearity, stacked NMOS-PMOS $g_m$-boosting technique is employed in the design of LNA as the first stage. The switch transistors in the mixing stage are biased in subthreshold region to achieve low power consumption. The single balanced mixer is designed in PMOS transistors and is also realized based on the well-known folded architecture to increase voltage headroom. This frontend circuit features enhancement in gain, linearity, and power dissipation. The proposed circuit showed a maximum conversion gain of 19.6 dB and noise figure of 3 dB at the operation frequency. It also showed input and output return losses of less than -10 dB within bandwidth. Furthermore, the port-to-port isolation illustrated excellent characteristic between two ports. This frontend showed the third-order input intercept point (IIP3) of 3 dBm for the whole circuit with power dissipation of 6.5 mW from a 1.5 V supply.

2차 고조파 주입을 사용한 고 선형성의 자체 발진 혼합기 (A Highly Linear Self Oscillating Mixer Using Second Harmonic Injection)

  • 김민회;조춘식;이재욱
    • 한국전자파학회논문지
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    • 제23권6호
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    • pp.682-690
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    • 2012
  • 본 논문은 2차 고조파 주입을 적용한 고선형의 균형적인 자체 발진 혼합기(SOM)를 제안하였다. 제안한 SOM은 발진을 위하여 균형적 공진기 구조인 H-슬롯 결함 접지면 구조로 설계하였다. H-슬롯 결함 접지면 구조는 높은 Q 계수를 가지므로 발진기의 낮은 위상 잡음을 제공하기에 적합한 구조이다. 혼합기는 균형적 국부발진기(LO) 신호가 RF 입력 포트에 영향을 주면 안 되므로 LO-RF 신호의 격리에 좋은 단일 평형 혼합기를 활용하였다. 또한, 제안한 SOM은 선형성 향상을 위해 IF의 2차 고조파 주입을 위하여 서로 다른 피드백 경로를 사용하는 두 가지 방법을 제안하였다. 첫 번째 방법은 입력 파워 -20 dBm의 5 GHz RF 입력 신호일 때 226 MHz IF에서 3.08 dB의 변환 이득을 실현하였고, 두 번째 방법으로는 입력 파워 -20 dBm의 5.2 GHz RF 입력 신호일 때 423 MHz IF에서 2 dB의 변환 이득을 달성하였다. 두 가지 방법 대한 측정 결과, 3차 혼변조 왜곡(IMD3)는 각각 61.8 dB, 65 dB로 나타났다. 따라서 제안한 SOM은 2차 고조파 주입 기술을 적용하지 않은 것에 비해 두 가지 방법 각각 IMD3가 18.8 dB, 21 dB로 개선되었으므로 향상된 선형성을 보여준다.