• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.5 s.176
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• pp.1314-1322
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• 2000

The acoustic property of reactive type single expansion chamber can be analyzed by traditional plane wave theory. This theory can be applied in low frequency range and has good performance. But this theory can't include higher order modes, therefore another method is essential to analyze acoustic filter in high frequency range. Many researcher suggested the method that can concern higher order modes, and their methods are using mode matching technique. But there is no method that can be applied to the analysis of single expansion chamber with arbitrary inlet/outlet duct position and numbers of higher order modes of inlet/outlet duct and middle chamber. In this paper, the method which can analyze single expansion chamber with arbitrary inlet/outlet duct position and numbers of higher order modes of inlet/outlet duct and middle chamber using fundamental mode matching technique, was suggested and the predictions by this method was compared with those by the finite element method, and the influence of inlet/outlet location to acoustic performance of single expansion chamber is investigated and explained by higher order mode effects.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.35 no.4
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• pp.428-434
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• 1999

Experimental studies on the characteristics of annular jet pump were carried out in this paper. Jet pump can be used widely for the transportation of solid materials, farm produce and fishes. The effects of high pressure chamber on the characteristics of annular jet pump were sought in this paper. Experiments were done for three shapes of high pressure chamber, and for several lengths of the high pressure chamber. Three types of the high pressure chamber's entrances($90^{\circ}$ single inflow, $45^{\circ}$single inflow, and $45^{\circ}$ double inflow) were tested. Water was used for both the primary fluid and secondary fluid. The results obtained in this study are as follows; $45^{\circ}$double inflow type is the most effective among the tested three types of the high pressure chamber's entrances. The efficiency of jet pump with 400mm of high pressure chamber length is the highest among the chamber lengths tested in this study, thus indicating appropriate chamber length is required to get an efficient.

• 유체기계공업학회:학술대회논문집
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• 2000.12a
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• pp.75-81
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• 2000

Experimental studies on the characteristics of annular jet pump were carried out in this paper. The effects of high pressure chamber on the characteristics of annular jet pump were sought in this paper. Experiments were done for three shapes of high pressure chamber, and for several lengths of the high pressure chamber. Three types of the high pressure chamber's entrances($90^{\circ}$ single inflow, $45^{\circ}$ single inflow, and $45^{\circ}$ double inflow) were tested. Water was used for both the primary fluid and secondary fluid. The results obtained in this study are as follows; $45^{\circ}$ double inflow type is the most effective among the tested three types of the high pressure chamber's entrances. The efficiency of jet pump with 400mm of high pressure chamber length is the highest among the chamber lengths tested in this study, thus indicating appropriate chamber length is required to get an efficient jet pump.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Journal of the Korean Society of Visualization
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• v.10 no.3
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• pp.25-29
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• 2012

This paper introduces a new parameter to design the $2{\times}2$ microfluidic centrifuge with single flow rotation positioned at the center of microchamber. The dimensional centrifugal acceleration momentum flux which is defined as the interfacial momentum flux divided by distance from the center of the chamber explains the flow rotation and its threshold provides a reference to expect single flow rotation. Through the numerical and experimental visualization of the flow rotation, the number and position of flow rotation in the $2{\times}2$ microfluidic centrifuge were examined. At a channel width of $50{\mu}m$ and chamber width of $250{\mu}m$, single flow rotation was obtained over at a Reynolds number of 300, while at a channel width of $100{\mu}m$ and chamber width of $500{\mu}m$, single flow rotation did not appear. The numerical analysis showed that the threshold centrifugal acceleration momentum flux to obtain single flow rotation was $3500kg/m{\cdot}s^2$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.569-570
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• 2012

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.1007-1008
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• 2013

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.357-363
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• 2019

We investigated a synthesis yield and diameter distribution of single-walled carbon nanotubes (SWNTs) with respect to the growth position in a horizontal chemical vapor deposition (CVD) chamber. Thin films and line-patterned Fe films (0.1 nm thickness) were prepared onto ST-cut quartz substrates as catalyst to compare the growth behavior. The line-patterned samples showed higher growth density and parallel alignment than those of the thin film catalyst samples. In addition, line density of the aligned SWNTs at central region of the chamber was 7.7 tubes/㎛ and increased to 13.9 tubes/㎛ at rear region of the CVD chamber. We expect that the enhanced amount of thermally decomposed feedstock gas may contribute to the growth yield enhancement at the rear region. In addition, the lamina flow in the chamber also contribute to the perfect alignment of the SWNTs based on the value of gas velocity, Reynold number, and Knudsen coefficient we employed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.111-118
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• 1994

Silicon single crystals were continuously grown by a modified process. Polycrystalline silicon powder was fed from the top reservoir to the growth chamber. Silicon single crystals were grown from the botton of the growth chamber. The balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed was the one of the main factors to control the diameter of crystals grown and quality, etc.

• Proceedings of the KOSOMBE Conference
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• v.1998 no.11
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• pp.119-120
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• 1998

In this study, the design of the single-chamber pacemaker tester is presented. It is important to test the functions of the pacemaker before it is implanted into the patient. A pacemaker tester, that is presented in this study, is able to examine pacemaker parameters such as sensing threshold and refractory period. We need to make artificial intracardiac electrogram in order to test the pacemaker parameters. We know from the previous practical examples that a triangle pulse is similar to the physiologic intracardiac electrogram. The tester generates the simplified electrograms and PC software examines the output pulses of the pacemaker which is VVIR mode in closed-loop simulation.