• Title/Summary/Keyword: Single Chamber

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임의의 입ㆍ출구 위치를 가지는 소음기 해석을 위한 개선된 모드일치법 (Modified Mode Matching Technique for Analyzing Simple Expansion Chamber with Arbitrary Inlet/Outlet Location)

  • 김봉준;정의봉;이정환
    • 대한기계학회논문집A
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    • 제24권5호
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    • pp.1314-1322
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    • 2000
  • The acoustic property of reactive type single expansion chamber can be analyzed by traditional plane wave theory. This theory can be applied in low frequency range and has good performance. But this theory can't include higher order modes, therefore another method is essential to analyze acoustic filter in high frequency range. Many researcher suggested the method that can concern higher order modes, and their methods are using mode matching technique. But there is no method that can be applied to the analysis of single expansion chamber with arbitrary inlet/outlet duct position and numbers of higher order modes of inlet/outlet duct and middle chamber. In this paper, the method which can analyze single expansion chamber with arbitrary inlet/outlet duct position and numbers of higher order modes of inlet/outlet duct and middle chamber using fundamental mode matching technique, was suggested and the predictions by this method was compared with those by the finite element method, and the influence of inlet/outlet location to acoustic performance of single expansion chamber is investigated and explained by higher order mode effects.

고압실 형상에 따른 환형 제트펌프의 특성 (The Effect of High Pressure Chamber's Shape on the Characteristics of Annular Jet Pump)

  • 권오붕
    • 수산해양기술연구
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    • 제35권4호
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    • pp.428-434
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    • 1999
  • Experimental studies on the characteristics of annular jet pump were carried out in this paper. Jet pump can be used widely for the transportation of solid materials, farm produce and fishes. The effects of high pressure chamber on the characteristics of annular jet pump were sought in this paper. Experiments were done for three shapes of high pressure chamber, and for several lengths of the high pressure chamber. Three types of the high pressure chamber's entrances($90^{\circ}$ single inflow, $45^{\circ}$single inflow, and $45^{\circ}$ double inflow) were tested. Water was used for both the primary fluid and secondary fluid. The results obtained in this study are as follows; $45^{\circ}$double inflow type is the most effective among the tested three types of the high pressure chamber's entrances. The efficiency of jet pump with 400mm of high pressure chamber length is the highest among the chamber lengths tested in this study, thus indicating appropriate chamber length is required to get an efficient.

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고압실 형상에 따른 환형 제트펌프의 특성 (The Effect of High Pressure Chamber's Shape on the Characteristics of Annular Jet Pump)

  • 김명관;권오붕
    • 유체기계공업학회:학술대회논문집
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    • 유체기계공업학회 2000년도 유체기계 연구개발 발표회 논문집
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    • pp.75-81
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    • 2000
  • Experimental studies on the characteristics of annular jet pump were carried out in this paper. The effects of high pressure chamber on the characteristics of annular jet pump were sought in this paper. Experiments were done for three shapes of high pressure chamber, and for several lengths of the high pressure chamber. Three types of the high pressure chamber's entrances($90^{\circ}$ single inflow, $45^{\circ}$ single inflow, and $45^{\circ}$ double inflow) were tested. Water was used for both the primary fluid and secondary fluid. The results obtained in this study are as follows; $45^{\circ}$ double inflow type is the most effective among the tested three types of the high pressure chamber's entrances. The efficiency of jet pump with 400mm of high pressure chamber length is the highest among the chamber lengths tested in this study, thus indicating appropriate chamber length is required to get an efficient jet pump.

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Prevention of P-i Interface Contamination Using In-situ Plasma Process in Single-chamber VHF-PECVD Process for a-Si:H Solar Cells

  • Han, Seung-Hee;Jeon, Jun-Hong;Choi, Jin-Young;Park, Won-Woong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.204-205
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    • 2011
  • In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

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마이크로 유체 원심분리기의 챔버 크기에 따른 회전 유동 가시화 (Visualization of Rotational Flow for Chamber Size of a 2×2 Microfluidic Centrifuge)

  • 전형진;권봉현;김대일;고정상
    • 한국가시화정보학회지
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    • 제10권3호
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    • pp.25-29
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    • 2012
  • This paper introduces a new parameter to design the $2{\times}2$ microfluidic centrifuge with single flow rotation positioned at the center of microchamber. The dimensional centrifugal acceleration momentum flux which is defined as the interfacial momentum flux divided by distance from the center of the chamber explains the flow rotation and its threshold provides a reference to expect single flow rotation. Through the numerical and experimental visualization of the flow rotation, the number and position of flow rotation in the $2{\times}2$ microfluidic centrifuge were examined. At a channel width of $50{\mu}m$ and chamber width of $250{\mu}m$, single flow rotation was obtained over at a Reynolds number of 300, while at a channel width of $100{\mu}m$ and chamber width of $500{\mu}m$, single flow rotation did not appear. The numerical analysis showed that the threshold centrifugal acceleration momentum flux to obtain single flow rotation was $3500kg/m{\cdot}s^2$.

수평형 CVD 장치에서 기판 위치에 따른 단일벽 탄소나노튜브의 합성 수율 및 직경 분포 고찰 (Investigation of Synthesis Yield and Diameter Distribution of Single-Walled Carbon Nanotubes Grown at Different Positions in a Horizontal CVD Chamber)

  • 조성일;정구환
    • 한국표면공학회지
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    • 제52권6호
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    • pp.357-363
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    • 2019
  • We investigated a synthesis yield and diameter distribution of single-walled carbon nanotubes (SWNTs) with respect to the growth position in a horizontal chemical vapor deposition (CVD) chamber. Thin films and line-patterned Fe films (0.1 nm thickness) were prepared onto ST-cut quartz substrates as catalyst to compare the growth behavior. The line-patterned samples showed higher growth density and parallel alignment than those of the thin film catalyst samples. In addition, line density of the aligned SWNTs at central region of the chamber was 7.7 tubes/㎛ and increased to 13.9 tubes/㎛ at rear region of the CVD chamber. We expect that the enhanced amount of thermally decomposed feedstock gas may contribute to the growth yield enhancement at the rear region. In addition, the lamina flow in the chamber also contribute to the perfect alignment of the SWNTs based on the value of gas velocity, Reynold number, and Knudsen coefficient we employed.

연속성장법에 의한 silicon 단결정 연속 성장 (Silicon single crystal growth by continuous growth method)

  • J.W. Han;S.H. Lee;Keun Ho Orr
    • 한국결정성장학회지
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    • 제4권2호
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    • pp.111-118
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    • 1994
  • Crystal growth chamber 상부에 있는 reservoir에서 polycrystalline silicon powder를 연속적으로 feeding하면서 도가니 하부에 용융대를 형성시키고 seed를 meed를 dipping하여 회전시키면서 하부로 끌어내려 단결정을 성장시키는 연속성장법의 기본 원리를 확립하였고, 직접 고안 설계 제작한 연속성장 장치로 silicon 단결정을 성장시켰다. 본 연속성장법은 melt에 미치는 중력, 진동, melt의 표면장력, melt와 solid의 계면 장력, seed의 회전에 따른 원심력 등의 힘들이서로 상쇄되고 power, feeding양과 성장속도가 비례하여 적당한 조합을 이룰 때 안정한 연속성장을 할 수있다.

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Single-Chamber 페이스메이커 테스터의 개발에 관한 연구 (A Study on the Development of a Single-Chamber Cardiac Pacemaker Tester)

  • 강병윤;신재우;윤영로
    • 대한의용생체공학회:학술대회논문집
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    • 대한의용생체공학회 1998년도 추계학술대회
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    • pp.119-120
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    • 1998
  • In this study, the design of the single-chamber pacemaker tester is presented. It is important to test the functions of the pacemaker before it is implanted into the patient. A pacemaker tester, that is presented in this study, is able to examine pacemaker parameters such as sensing threshold and refractory period. We need to make artificial intracardiac electrogram in order to test the pacemaker parameters. We know from the previous practical examples that a triangle pulse is similar to the physiologic intracardiac electrogram. The tester generates the simplified electrograms and PC software examines the output pulses of the pacemaker which is VVIR mode in closed-loop simulation.

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