• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• BMB Reports
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• v.53 no.2
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• pp.74-81
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• 2020

Under physiological and pathological conditions, mechanical forces generated from cells themselves or transmitted from extracellular matrix (ECM) through focal adhesions (FAs) and adherens junctions (AJs) are known to play a significant role in regulating various cell behaviors. Substantial progresses have been made in the field of mechanobiology towards novel methods to understand how cells are able to sense and adapt to these mechanical forces over the years. To address these issues, this review will discuss recent advancements of traction force microscopy (TFM), intracellular force microscopy (IFM), and monolayer stress microscopy (MSM) to measure multiple aspects of cellular forces exerted by cells at cell-ECM and cell-cell junctional intracellular interfaces. We will also highlight how these methods can elucidate the roles of mechanical forces at interfaces of cell-cell/cell-ECM in regulating various cellular functions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.37-40
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• 1999

For the first time, charge trapping nonvolatile semiconductor memories with the deoxidized oxynitride gate dielectric is proposed and demonstrated. Gate dielectric wit thickness of less than 1 nm have been grown by postnitridation of pregrown thermal silicon oxides in NO ambient and then reoxidation. The nitrogen distribution and chemical state due to NO anneal/reoxidation were investigated by M-SIMS, TOF-SIMS, AES depth profiles. When the NO anneal oxynitride film was reoxidized on the nitride film, the nitrogen at initial oxide interface not only moved toward initial oxide interface, but also diffused through the newly formed tunnel oxide by exchange for oxygen. The results of reoxidized oxynitride(ONO) film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/N-rich SiON interface/Si-rich SiON(nitrogen diffused tunnel oxide)/Si substrate. In addition, the SiON and the S1$_2$NO Phase is distributed mainly near the tunnel oxide, and SiN phase is distributed mainly at tunnel oxide/Si substrate interface.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.203-203
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• 1999

Mass spectrometry technique provides the molecular weight distribution, data on the sequence of repeat units, polymer additives, and impurities, and structural information. time-of-Flight secondary Ion Mass Spectrometry (TOF-SIMS) has been used for structural characterization of various polymers1-2. the masses of repeat units and terminal groups and molecular weight distributions of polymers have been determined from their TOF-SIMS spectra. TOF-SMIS provides good sensitivity and structural specificity for high mass ions so that intact oligomers and large polymer fragments are observed. In this study, we investigated the detailed structural information on the oligomers and fragment ions of branched poly(1,3-butylene adipate) and branched poly[di(ethylene glycol) adipate] and the transesterification products of branched polyesters with trifluoroacetic acid or chloro difluoroacetic acid. Branched polyesters were chosen because they are important polymers but difficult to characterize; thus branched polyesters provide challanging test for TOF-SIMS. TOF-SIMS spectra of polyesters are obtained from thin polymer films cast from solution on a silver substrate. A good solvent for a polumer solution disrupts intermolecular forces between polymer chains but leaves the polumer intact. Transesterification reactions are potentially useful for characterization of high molecular weight and intractable polyesters. Transesterification products of polyesters and trifluoroacetic acid or an integral number of polyester repeat units and an additional diol. The progress of such reactions was monitored using peak intensities of reactants and products in TOF-SIMS spectra. The increasing abundance of tagged ions indicates that the reaction has progressed with time.

• Journal of the Korean institute of surface engineering
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• v.51 no.2
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• pp.110-115
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• 2018

The Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films was investigated using dynamic SIMS(secondary ion mass spectrometry) analysis. DC magnetron sputter, APCVD and PECVD techniques were utilized for the deposition of Al-1%Si thin films, $SiO_2/PSG/SiO_2$ and $SiO_2/TEOS/SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of Na, Al, Si and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze chemical states of Si and O elements in $SiO_2$ passivation layers. Na peaks were observed throughout the $PSG/SiO_2$ and $TEOS/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the interfaces. Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.219-224
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• 2017

The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.48-56
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• 1999

In this paper, we have investigated experimentally the effects of initial oxygen concentration on oxygen pileup phenomenon and the diffusion of implanted impurities. 1.2 MeV $^{11}B^{+}$ and 2.2 MeV $^{31}P^{+}$ ions were implanted into p-type (100) Si wafers with a dose of 1${\times}10^{15}$ / $\textrm{cm}^2$. Secondary ion mass spectrometry(SIMS) measurements were carried out to obtain depth distribution profiles for implanted impurities and oxygen atoms after two-step annealing of $700^{\circ}C$(20 hours)+$1000^{\circ}C$(10 hours). Residual secondary defect distribution and annealing behabiour were also studied by cross-sectional transmission electron microscopy(TEM) observations. Oxygen pileup nearly $R_p$(projected range) were observed by SIMS measurements and considerable amount of residual secondary defect layer were observed by TEM observations. It can be seen that oxygen atoms are trapped at the secondary defects by the experimental results. Enhanced diffusions of boron and phosphorus to the bulk direction were observed with the increasing of initial oxygen concentration.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.211-215
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• 2001

SBT thin films were etched at different content of $Cl_2$ in $Cl_2$/Ar or $Cl_2/N_2$(80%). As $Cl_2$ gas increased in $Cl_2$/Ar or $Cl_2/N_2$ gas plasma. the etch rate decreased. The result indicates that physical puttering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) were carried out. From the result of AFM, the rms values of etched samples in Ar only or $Cl_2$ only plasma were higher than that of as-deposited, $Cl_2$/Ar and $Cl_2/N_2$ plasma. This can be illustrated by a decrease of Bi content of nonvolatile etching products (Sr-Cl and Ta-Cl), which are revealed by XPS and SIMS.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.279-279
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• 2013

차세대 태양전지로 주목받는 화합물 박막 태양전지(CIGS, CdTe, etc)는 광흡수계수가 매우 높아 얇은 두께의 광흡수층으로도 빛을 효과적으로 흡수할 수 있으므로 광흡수층의 역할이 매우 중요하며 이에 대한 정확한 정보와 이해는 필수적이다. 특히 GIGS 박막 태양전지의 정량 및 각 원소의 깊이 방향의 분포를 분석하는 것은 박막형 태양전지 개발에 크게 기여한다 [1,2]. 본 실험에서는 조성비를 알고 있는 균질한 CIGS박막을 표준시료로 사용하여 ICP-MS로 측정하여 평균농도를 구한 뒤 TOF-SIMS, D-SIMS, Auger Electron Spectroscopy (AES) 로 깊이 방향 분석 결과를 통해 상대감도(RSF)를 계산한 후 각 원소의 농도로 변환하여 정량분석 결과를 얻었다. 일반적으로 손쉽게 정량적인 정보를 얻는 AES에 비해 정량성이 떨어지는 TOF-SIMS와 D-SIMS는 스퍼터링시 사용되는 Cs 빔과 시료 내 금속과의 클러스터 이온(GaCs+와 InCs+)의 깊이 방향 조성을 이용하면 매트릭스 효과를 배제할 수 있어서 좀 더 정확한 정량 분석이 가능하므로 시료내 금속과 Cs 이 결합된 클러스터 이온의 깊이 방향 조성을 측정하여 각원소의 농도를 계산하였고 스퍼터링 에너지를 포함한 실험 변수에 따른 재현성 및 정량성의 차이를 비교분석하였다. 또한 CIGS층에 불순물로 들어 있는 미량원소들의 깊이 분포도도 함께 관찰하였다.

• Journal of Korea Game Society
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• v.11 no.5
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• pp.53-65
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• 2011

If we analyze games and game communities which are mostly consumed by the young, we can get the meaningful analysis result of youth culture. The content analysis and the discourse analysis methods were used in this study since the relationship between media and culture was exquisitely reciprocal. The object of analysis is the domestic community of the simulation game, Sims 2, which reflects the identities of the game players. I was searching for the social and cultural meaning of the game activities, and could find the content's characteristics of 'Sims 2' players' discourses. The results showed that the game media has social and cultural significance by providing the players a self-realization, identity workshop, virtual identity that diverges from their own ones with an alternative sex, constructing a cultural property with the involved game players, and increasing their virtual consumption and self-examination of antisocial behaviors in the game.