• Journal of Electrical Engineering and information Science
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• 제2권3호
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• pp.82-87
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• 1997

Ion-Sensitive Field-Effect Transistors(ISFETs) with LPCVD silicon nitride as a sensitive gate were fabricated on the basis of a CMOS process. The silicon nitride was deposited directly on a poly silicon gate-electrode. Using a specially designed measuring cell, the hydrogen ions sensing properties of the ISFET in liquid could be investigated without any bonding or encapsulation. At first, th sensitivity was estimated by simualtions according to the site-binding theory and the experimental results were analysed and compared with simulated results. The measured dta were in good agreement with the simulated results. The silicon nitride based ISFET has good linearity evaluated from correlation factor ($\geq$0.9998) and a mean pH-sensitivity of 56.8mV/pH. The maximum hysteresis width between forward(pH=3\longrightarrowpH=11)- and backward(pH=11\longrightarrowpH=3) titration was 16.7mV at pH=6.54.

• 한국세라믹학회지
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• 제32권12호
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• pp.1417-1423
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• 1995

α/β sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the α to β phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phse transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si3N4 whisker and rim being β-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300℃ to be about 130 MPa lower than that measured at RT for the whisker reinforced composites.

• Journal of Electrical Engineering and Technology
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• 제9권4호
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• pp.1343-1348
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• 2014

The low frequency noise in Silicon Nanowire Field Effect Transistors is analyzed by characterizing the gate electrode dependence on various geometrical parameters. It shows that gate electrodes have a strong impact in the flicker noise of Silicon Nanowire Field effect transistors. Optimization of gate electrode was done by comparing different performance metrics such a DIBL, SS, $I_{on}/I_{off}$ and fringing capacitance using TCAD simulations. Molybdenum based gate electrode showed significant improvement in terms of high drive current, Low DIBL and high $I_{on}/I_{off}$. The noise power sepctral density is reduced by characterizing the device at higher frequencies. Silicon Nanowire with Si3N4 spacer decreases the drain current spectral density which interms reduces the fringing fields there by decreasing the flicker noise.

• 센서학회지
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• 제14권5호
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• pp.357-361
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• 2005

Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.

• Journal of the Optical Society of Korea
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• 제12권4호
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• pp.288-297
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• 2008

Recent research efforts on study of silicon photonics utilizing stimulated Raman scattering have largely overlooked temperature effects. In this paper, we incorporated the temperature dependences into the key parameters governing wave propagation in silicon waveguides with Raman gain and investigated how the temperature affects the solution of the coupled-mode equations. We then carried out, as one particular application example, a numerical analysis of the performance of wavelength converters based on stimulated Raman scattering at temperatures ranging from 298 K to 500 K. The analysis predicted, among other things, that the wavelength conversion efficiency could decrease by as much as 12 dB at 500 K in comparison to that at the room temperature. These results indicate that it is necessary to take a careful account of temperature effects in designing, fabricating, and operating Raman silicon photonic devices.

• 한국전기전자재료학회논문지
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• 제37권4호
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• pp.439-444
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• 2024

This study investigates the post-thermal treatment effects on the efficiency of silicon heterojunction solar cells, specifically examining the influence of annealing on p-type microcrystalline silicon oxide and ITO thin films. By assessing changes in carrier concentration, mobility, resistivity, transmittance, and optical bandgap, we identified conditions that optimize these properties. Results reveal that appropriate annealing significantly enhances the fill factor and current density, leading to a notable improvement in overall solar cell efficiency. This research advances our understanding of thermal processing in silicon-based photovoltaics and provides valuable insights into the optimization of production techniques to maximize the performance of solar cells.

• 한국전기전자재료학회논문지
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• 제28권11호
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• pp.698-703
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• 2015

In this study, we fabricated the dual gate (DG) ion-sensitive field-effect-transistor (ISFET) with flexible polyimide (PI) extended gate (EG). The DG ISFETs significantly enhanced the sensitivity of pH in electrolytes from 60 mV/pH to 1152.17 mV/pH and effectively improved the drift and hysteresis phenomenon. This is attributed to the capacitive coupling effect between top gate and bottom gate insulators of the channel in silicon-on-transistor (SOI) metal-oxide-semiconductor (MOS) FETs. Accordingly, it is expected that the PI-EG based DG-ISFETs is promising technology for high-performance flexible biosensor applications.

• International Journal of Internet, Broadcasting and Communication
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• 제7권2호
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• pp.161-167
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• 2015

The performance of high power LEDs highly depends on the junction temperature. Operating at high junction temperature causes elevation of the overall thermal resistance which causes degradation of light intensity and lifetime. Thus, appropriate thermal management is critical for LED packaging. The main goal of this research is to improve thermal resistance by optimizing and comparing nano-pore silicon-based thermal substrate to insulated metal substrate and direct bonded copper thermal substrate. The thermal resistance of the packages are evaluated using computation fluid dynamic approach for 1 W single chip LED module.

• 한국초전도ㆍ저온공학회논문지
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• 제8권1호
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• pp.26-28
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• 2006

The development technique of digital logic using CMOS device is close reached several limitations These make technical needs that are ultra high speed superconductive systems based on CMOS silicon digital computing technique. Comparing digital logic based on silicon CMOS, the computing technique based on ultra high speed superconductive systems has many advantages which are ultra low power consumption, ultra high operation speed. etc. It is estimated that features like these increasingly improve the possibility of ultra low power and ultra superconductive systems. In this paper digital logics of current CMOS technique and RSFQ superconductive technique are compared with and analyzed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.637-640
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• 2008

The properties of oriented poly(3-hexylthiophene-2,5-diyl) in field effect transistors (FETs) have been investigated through mechanical stretching process as the original. Silicon-based FETs shown high mobility of $0.02\;cm^2/V$ s after thermal treatment and $0.0092\;cm^2/V$ s at r.t. PET-based FETs were expected to show a similar performance in mobility to that of silicon-based FETs.