• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.370-376
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• 2012

In this work, design considerations for high-performance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An $f_{-3dB}$ of 80 GHz at an operating voltage of 1 V was obtained.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.1315-1318
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• 2004

Nano-scale fabrication of silicon substrate in an aqueous solution based on the use of atomic force microscopy was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate easily by a simple scratching process (Tribo-Nanolithography, TNL), has been applied instead of conventional silicon cantilever for scanning. A slant nanostructure can be fabricated by a process in which a thin damaged layer rapidly forms in the substrate at the diamond tip-sample junction along scanning path of the tip and simultaneously the area uncovered with the damaged layer is being etched. This study demonstrates how the TNL parameters can affect the formation of damaged layer and the shape of 3-D structure, hence introducing a new process of proximal nanolithography in aqueous solution.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2000.05a
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• pp.105-109
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor the size of the pressure sensor diaphragm have become smaller year by year and a microaccelerometer with a size less than 200-300${\mu}m$ has been realized. In this paper we study some of the micromachining processes of SOI(silicon on insulator)for the microaccelerometer and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for design of SOI wafers. Successful thermal behaviors analysis and design of the SOI wafers based on the tunneling current concept using SOI wafer depend on the knowledge abut normal mechanical properties of the SCS(single crystal silicon)layer and their control through manufacturing process

• Journal of Sensor Science and Technology
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• v.28 no.6
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• pp.360-365
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• 2019

A polyvinylidene fluoride (PVDF)-based film speaker is successfully fabricated with enhanced bass sound by incorporating buckled nanospring carbon nanotubes (NS-CNTs) as fillers. Various concentrations up to 1-7 wt% of uniformly dispersed buckled NS-CNTs are loaded to increase the beta (β)-phase fraction, crystallinity, and dielectric constant of the speaker, and this results in the bass part enhancement of about 19 dB full scale (dBFS) at 7 wt% filler loading of the piezoelectric film speaker.

• Journal of Powder Materials
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• v.5 no.2
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• pp.133-138
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• 1998

The effect of $\beta$-$Si_3N_4$ seeding on microstructural development of silicon nitride based materials has been investigated. In particular, to observe more distinctly the abnormal grain growth in pressureless sintering, fine $\alpha$-$Si_3N_4$(mean particle size: 0.26 ${\mu}m$) powder classified by sedimentation method was used. It was possible to prepare silicon nitride with abnormally grown grains under low nitrogen pressure of 1 atm thanks to the heterogeneous nucleation on $Si_3N_4$ seed particles. The size and morphology of silicon nitride grains were strongly influenced by the presence of $\beta$-$Si_3N_4$ seed and overall chemical composition. For specimens with initially low $\beta$-content, the large grains grew without a significant impingement by other large grains. On the contrary, for specimens with initially high $\beta$-content, steric hindrance was effective. The resulting microstructure was less inhomogeneous and characterized by unimodal grain size distribution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.130-138
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• 2006

We have investigated pattern scaling down of silicon stamps through the oxidation technique, During oxidizing the silicon stamps, silicon dioxide that has 300 nm and 500 nm thickness was grown, and critical deformations were not observed in the patterns. There was positive effect to reduce size of patterns because vertical and horizontal patterns have different orientation. We achieved pattern reduction rate of $26\%$. In addition, the formation of polymer patterns had been investigated with varied temperature and pressure conditions to improve the filling characteristics of polymers during nanoimprint lithography when pattern sizes were few micrometers. In these varied conditions, polymers had been affected by free space compensation and elastic stress relaxation for filling the cavities. Based on the results, defect control which is an important issue in the nanoimprint lithography were facilitated.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.83-88
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• 2003

The optoelectronic characteristics of semiconducto-atomic superlattice as a function of deposition temperature and annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy(MBE) system. As an experimental result, the superlattice with multilayer Si-O structure showed a stable photoluminescence(PL) and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronics and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in ultra-high speed and lower power CMOS devices in the future, and it can be directly integrated with silicon ULSI processing.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.1-12
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• 1997

A new three-dimensional (3D) Monte Carlo ion implantation simulator, TRICSI, has been developed to investigate 3D mask effects in the typical mask structure for ion implantation into crystalline silicon. We present the mask corner and mask size effects of implanted boron range profiles, and also show the calculated damage distributions by applying the modified Kinchin-Pease equation in the single-crystal silicon target. The simulator calculates accurately and efficiently the implanted-boron range profiles under the relatively large implanted area, using a newly developed search algorithm for the collision partner in the single-crystal silicon. All of the typical implant parameters such as dose, tilt and rotation angles, in addition to energy can be used for the 3D simulation of ion implantation.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.692-696
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• 2005

In an attempt to fabricate all inclusive display systems we are presenting a study on several elements that would be used as building blocks for all-on-board integrated applications on stainless steel foils. These systems would include in the same substrate all or many of the components needed to drive a flat panel OLED display. We are reporting results on both digital and analog circuits on stainless steel foils. Shift registers running at speeds greater than 1.0MHz are shown as well as oscillators operating at over 40MHz. Pixel circuits for driving organic light emitting diodes are presented. The device technology of choice is that based on poly-silicon TFT technology as it has the potential of producing circuits with good performance and considerable cost savings over the established processes on quartz or glass substrates (amorphous Silicon a-Si:H or silicon on Insulator SOI).

• Proceedings of the KIEE Conference
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• 2002.07d
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• pp.2285-2288
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• 2002

Recently, electronic personal dosimeters based upon silicon PIN photodiode or miniature GM tube were developed and have attracted a lot of attention because of the advantages of their nature such as indication of dose rate and the cumulative dose, and facilitation of record keeping. In this paper, we have developed a high-sensitivity electronic personal dosimeter with silicon PIN photodiode. The electronic personal dosimeter is constructed with silicon PIN photodiode, preamplifier, and shaping amplifier. To show the effectiveness of electronic personal dosimeter, we conducted nuclear radiation experiments using $\gamma$-ray Ba-133, Cs-137, and Co-60. The electronic personal dosimeter have a good linearity on $\gamma$-ray energy and activity.