• 한국진공학회지
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• 제17권3호
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• pp.215-219
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• 2008

실리콘 웨이퍼 위에 Plasma Enhanced Chemical Vapor Deposition (PECVD) 방법으로 증착 된 SiNx 박막의 수소 함량을 측정하였다. 제작된 SiNx 박막은 Fourier Transform Infrared Spectroscopy (FT-IR) 사용하여 박막의 수소함량과 결합상태를 확인하였으며, Atomic Force Microscopy (AFM) 측정을 통하여 박막의 표면 거칠기를 비교, 시료의 조성비 평가를 위하여 Rutherford Backscattering Spectrometry (RBS)을 사용하였다. 또한 SiNx박막의 조성확인을 위하여 Photoluminescence(PL)를 이용하여 FT-IR spectrum의 결과와 비교 해석하였다. FT-IR에서 NH의 수소함량(at%)이 0.92 %에서 0.64 %로 낮아질 수록 AFM을 이용한 표면 거칠기는 12.8 $\AA$에서 10.8 $\AA$로 낮아지고, Si양이 상대적으로 많아지는 것을 PL에서 확인하였으며, RBS에서도 시뮬레이션을 통해 비슷한 결과를 얻을 수 있었는데, 이는 FT-IR을 사용함으로써 SiNx 박막의 수소 함량의 측정이 가능하다는 것을 보여주므로 단위공정에서 신속하게 SiNx 박막 분석이 가능함을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.222-222
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• 2011

Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.124-124
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• 2011

This study investigated the interaction of varied plasma power with ultralow-k toluene-tetraethoxysilane (TEOS) hybrid plasma polymer thin films, as well as changing electrical and mechanical properties. The hybrid thin films were deposited on silicon(100) substrates by plasma enhanced chemical vapor deposition (PECVD) system. Toluene and tetraethoxysilane were utilized as organic and inorganic precursors. In order to compare the electrical and the mechanical properties, we grew the hybrid thin films under various conditions such as rf power of plasma, bubbling ratio of TEOS to toluene, and post annealing temperature. The hybrid plasma polymer thin films were characterized by Fourier transform infrared (FT-IR) spectroscopy, atomic force microscopy (AFM), nanoindenter, I-V curves, and capacitance. Also, the hybrid thin films were analyzed by using ellipsometry. The refractive indices varied with the RF power, the bubbling ratio of TEOS to toluene, and the annealing temperature. To analyze their trends of electrical and mechanical properties, the thin films were grown under conditions of various rf powers. The IR spectra showed them to have completely different chemical functionalities from the liquid toluene and TEOS precursors. Also, The SiO peak intensity increased with increasing TEOS bubbling ratio, and the -OH and the CO peak intensities decreased with increasing annealing temperature. The AFM images showed changing of surface roughness that depended on different deposition rf powers. An nanoindenter was used to measure the hardness and Young' modulus and showed that both these values increased as the deposition RF power increased; these values also changed with the bubbling ratio of TEOS to toluene and with the annealing temperature. From the field emission scanning electron microscopy (FE-SEM) results, the thickness of the thin films was determined before and after the annealing, with the thickness shrinkage (%) being measured by using SEM cross-sectional images.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.161-161
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• 2012

질화티타늄(Titanium Nitride, TiN)은 화학적 안정성이 우수하고, N/Ti 원소 비율에 따라 열전도성 및 전기전도성이 변화하는 특성을 가지고 있어서 Metal Insulator Silicon (MIS) 나 Metal Insulator Metal (MIM) capacitor의 metal electrode 물질로 적용되고 있다. $TiCl_4$와 $NH_3$ gas를 이용하여 $500^{\circ}C$ 이상의 고온 조건에서 Chemical Vapor Deposition (CVD) 법으로 TiN 박막을 증착하는 방식이 가장 널리 사용되고 있으나, TiN 박막 내의 Chlorine (Cl) 원소가 SiO2 두께와 누설전류 밀도를 증가시키는 요인으로 작용하므로 Cl의 거동 및 함량 제어를 통한 전기적인 특성의 향상 평가가 요구되고 있다[1-3]. 본 실험에서는 $SiO_2$ 위에 TiN을 적층 한 구조에서 magnetic sector type의 Secondary Ion Mass Spectrometry (SIMS)를 이용하여 Cl 원소의 검출도 개선 방법을 연구하였다. 일반적인 $Cs^+$ 이온을 이용하여 $Cl^-$ 이온을 검출할 경우에는 TiN 하부에 $SiO_2$가 존재함에 따른 charging effect와 mass interference가 발생되는 문제점이 관찰되었다. 이를 개선하기 위해 Cl과 Cs 원소가 결합된 $ClCs^+$ cluster ion을 검출하는 방법을 시도하였으나, Cl- 이온 검출 방식에 비해 오히려 낮은 검출도를 나타내었으나 Cl 원소가 속하는 halogen 족 원소의 높은 전자 친화도 특성을 이용한 $ClCs_2^+$ cluster ion을 검출하는 방법[4]을 적용한 경우에는 $ClCs^+$ 방식에 비해 검출도가 3order 개선되는 결과를 확보하였으며, 이 결과를 토대로 Cl dose ($atoms/cm^2$) 와 Rs (ohm/sq) 간의 상관 관계에 대해 고찰하고자 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.454-454
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• 2011

Graphene shows unusual electronic properties, such as carrier mobility as high as 10,000 $cm^2$/Vs at room temperature and quantum electronic transport, due to its electronic structure. Carrier mobility of graphene is ten times higher than that of Silicon device. On the one hand, quantum mechanical studies have continued on graphene. One of them is quantum Hall effect which is observed in graphene when high magnetic field is applied under low temperature. This is why two dimension electron gases can be formed on Graphene surface. Moreover, quantum Hall effect can be observed in room temperature under high magnetic field and shows fractional quantization values. Quantum Hall effect is important because quantized Hall resistances always have fundamental value of h/$e^2$ ~ 25,812 Ohm and it can confirm the quantum mechanical behaviors. The value of the quantized Hall resistance is extremely stable and reproducible. Therefore, it can be used for SI unit. We study to measure quantum Hall effect in CVD graphene. Graphene devices are made by using conventional E-beam lithography and RIE. We measure quantum Hall effect under high magnetic field at low temperature by using He4 gas closed loop cryostat.

• 공업화학
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• 제10권2호
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• pp.225-230
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• 1999

Li(DPM)을 원료로 hot wall 수평 관형 반응기를 이용하여 질소-산소 및 아르곤-산소의 분위기에서 $Li_2O$ 고체박막을 LPMOCVD법으로 합성하였다. XRD와 ESCA 분석으로부터 질소-산소 분위기에서는 $Li_2CO_3$막이, 아르곤-산소의 분위기에서는 $Li_2O$막이 성장하였음을 알아냈다. 성막된 산화리튬과 리튬카보네이트는 기판의 실리콘 성분과 반응하여 실리케이트를 형성하였다. 마이크로 trench법과 Monte Carlo 시뮬레이션에 의해 기상반응 속도상수 및 표면반응 속도상수가 얻어졌으며 이를 이용한 성막속도 계산치와 실험치를 비교한 결과 실험조건범위 내에서 잘 일치하였다.

• 한국지능시스템학회논문지
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• 제11권3호
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• pp.215-222
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• 2001

신경망은 선형 시스템뿐만 아니라 비선형 시스템에 있어서도 탁월한 모델링 및 예측 성능을 갖고 있다. 하지만 좋은 성능을 갖는 신경망을 구현하기 위해서는 최적화 해야할 파라미터들이 있다. 은닉층의 뉴런의 수, 학습율, 모멘텀, 학습오차 등이 그것인데 이러한 파라미터들은 경험에 의해서, 또는 문헌들에서 제시하는 값들을 선택하여 사용하는 것이 일반적인 경향이다. 하지만 신경망의 전체적인 성능은 이러한 파라미터들의 값에 의해서 결정되기 때문에 이 값들의 선택은 보다 체계적인 방법을 사용하여 구하여야 한다. 본 논문은 유전 알고리즘을 이용하여 이러한 신경망 파라미터들의 최적 값을 찾는데 목적이 있다. 유전 알고리즘을 이용하여 찾은 파라미터들을 사용하여 학습된 신경망의 학습오차와 예측오차들을 심플렉스 알고리즘을 이용하여 찾는 파라미터들을 사용하여 학습된 신경망의 오차들과 비교하여 본 결과 유전 알고리즘을 이용하여 찾을 파라미터들을 이용했을 때의 신경망의 성능이 더욱 우수함을 알 수 있다.

• 한국재료학회지
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• 제28권2호
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• pp.75-81
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• 2018

An ultra-high temperature ceramic, tantalum carbide, has received much attention for its favorable characteristics: a superior melting point and chemical compatibility with carbon and other carbides. One drawback is the high temperature erosion of carbon/carbon (C/C) composites. To address this drawback, we deposited TaC on C/C with silicon carbide as an intermediate layer. Prior to the TaC deposition, the $TaCl_5-C_3H_6-H_2$ system was thermodynamically analyzed with FactSage 6.2 and compared with the $TaCl_5-CH_4-H_2$ system. The results confirmed that the $TaCl_5-C_3H_6-H_2$ system had a more realistic cost and deposition efficiency than $TaCl_5-CH_4-H_2$. A dense and uniform TaC layer was successfully deposited under conditions of Ta/C = 0.5, $1200^{\circ}C$ and 100 torr. This study verified that the thermodynamic analysis is appropriate as a guide and prerequisite for carbide deposition.

• 한국재료학회지
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• 제5권5호
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• pp.552-559
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• 1995

Titanium nitride films were deposited on the (100) oriented-p-type silicon substrates of RF plasma enhanced chemical vapor depositiom\n using a gaseous mixutre of TiCl$_{4}$, N$_{2}$, H$_{2}$ and Ar. The chemincal composition, structure and the rsistivituy of the films were investigated with the deposition variables such as the flow rate ratio of N$_{2}$/TiCl$_{4}$, the deposition temperature and the RF power. The deposition rate increases with increasing the flow rate ratio of N$_{2}$TiCl$_{4}$ and RF power, while the rate decreases with increasing the deposition temperature. As the flow rate ratio of N$_{2}$/TiCl$_{4}$ and depostion temperature increases within proper RF pwoer, the Cl concentartion in the films decreases and the stoichiometry and crystallingiy are improved, so decreases the resistivity of the films. The films depostied under the condition of the N$_{2}$/TiCl$_{4}$ ratio of 30, the RF power of 50W and the depostion temperature of 62$0^{\circ}C$ had the Cl content of 1.5at% and the resistivity of 56㏁cm. Also, the bottom coverage of the films was above 60% on the step with the width and depth of 0.6${\mu}{\textrm}{m}$$\times$0.6${\mu}{\textrm}{m}$.

• 한국표면공학회지
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• 제46권1호
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.