• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1604-1607
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• 2009

YAG laser crystallization of Si-based thin film deposited on plastic substrate has been studied. The Si-based thin films as crystallization precursor are with varied hydrogen (H) content. The effect of the H content on the crystallinity of the resulted poly-Si film has been investigated. The experimental results of the poly-Si crystallized by doublefrequency YAG laser shows that the initial dehydrogenation process could be left out if ${\mu}c$-Si was adopted as the crystallization precursor. The YAG laser annealing condition on plastic substrate and the crystallization results have been discussed in the paper.

• Journal of Information Display
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• 제7권3호
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• pp.13-18
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• 2006

Currently, the flexible organic light emitting devices (OLEDs) are investigated. They are very vulnerable to moisture, and thus have been found to show some problems. Thus, an effective barrier layer is needed to protect from moisture in air. We deposited thin films with magnesium oxide (MgO) and silicon oxide $(SiO_{2})$ compounds mixed at various mixture ratios on flexible polyether sulfone (PES) substrates by an electron-beam evaporator to investigate their applizability for transparent barrier applications. In this study, we found that as the MgO fraction increased, thin films comprised of MgO and $(SiO_{2})$ compounds became more amorphous and their surface morphologies become smoother and denser. In addition, zirconium oxide $(ZrO_{2})$ was added to the above-mentioned compound mixtures. $ZrO_{2}$ made thin mixture films more amorphous and made the surface morphology denser and more uniform. The water vapor transmission rates (WVTRs) of the whole films decreased rapidly. The best WVTR was obtained by depositing thin films of Mg-Si-Zr-O compound among the whole thin films. As the thin mixture films became more amorphous, and the surface morphology become denser and more uniform, the WVTRs decreased. Therefore, the thin mixture films became more suitable for flexible OLED applications as transparent passivation layers against moisture in air.

• 한국전기전자재료학회논문지
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• 제24권10호
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• pp.817-821
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• 2011

We have proposed an optical thin film and micro lens to improve the luminance of organic light emitting device. The first method, optical thin film was calculated refractive index of dielectric layer material that was modulated refractive index of organic material, ITO (indium tin oxide)and glass. The second method, microlens was applied with lenses on the organic device. Optical thin films were designed with Macleod Simulator and Micro Lenses were calculated by FDTD (finite-difference time-domain) solution. The structure of thin film was designed in organic material/ITO/dielectric layer/glass. The lenses size, height and distance were 5 ${\mu}m$, 1 ${\mu}m$, 1 ${\mu}m$, respectively. The material of micro lenses used silicon dioxide. Result, The highest luminance of OLED which applied with microlens was 11,185 $cd/m^2$, when approval voltage was 14.5 V, applied thin film was 5,857 $cd/m^2$. The device efficiency applying microlens increased 3 times than the device which does not apply microlens.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.276-276
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• 2010

Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Journal of Advanced Marine Engineering and Technology
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• 제39권1호
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• pp.45-51
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• 2015

본 논문에서는 실리콘 RFIC 상에서 무선 통신 시스템의 소형화에의 응용을 위하여 마이크로스트립/코프레너 복합구조를 가지는 단파장 박막필름 전송선로의 RF특성에 관하여 연구하였다. 마이크로스트립/코프레너 복합구조를 가지는 박막필름 전송선로의 파장은 종래의 코프레너 선로에 비하여 단파장특성을 보여주고 있으며, 특히 10 GHz에서 파장이 6.26 mm로 종래의 코프레너 선로의 60.5 %이다. 또한 본 논문에서는 마이크로스트립/코프레너 복합구조를 가지는 박막필름 전송선로의 등가회로와 대역폭에 관하여 연구를 진행하였다. 등가회로는 단위 셀로 나타냈으며, 상기 등가회로의 각 소자들은 closed-form 수식을 통하여 이론적으로 계산하였다. 측정 결과 0 ~ 30 GHz 범위에서 계산수치와 측정수치가 유사하게 나온 것을 확인 할 수 있었다. 대역폭 계산결과 마이크로스트립/코프레너 복합구조를 가지는 박막필름 전송선로는 차단주파수가 377 GHz 이상의 광대역 특성을 보여주고 있다. 상기 결과들로부터 본 논문에서 제안한 전송선로를 이용하여 광대역 및 초소형 RF 수동소자로써 유용하게 사용될 수 있다는 것을 알 수 있었다.

• 한국산학기술학회논문지
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• 제17권10호
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• pp.9-12
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• 2016

특정 광 파장 영역대역에서 광 반사율을 갖는 다층 박막을 DC펄스 스퍼터링 공정으로 제작하기 위하여 공정변수가 다층 박막의 광학 특성에 미치는 영향이 연구되었다. 다층 박막 필름을 제작하기위한 시뮬레이션이 이루어졌으며, DC펄스 스퍼터링 공정을 이용한 저 굴절률의 $SiO_2$와 고 굴절률의 $TiO_2$ 박막의 광학 특성에 미치는 공정 변수 파라미터가 연구되었다. DC펄스 스퍼터링 파워 2kW, 아르곤 가스 200sccm(standard cubic centimeter per minute)기준조건에서 산소가스 비율 12% 범위에서 제작한 $SiO_2$박막은 굴절률 1.46이었고 산소가스 1% 비율에서 제작한 $TiO_2$박막은 굴절률 2.27이었다. 이들 박막으로 구성된 고 굴절률 박막/저 굴절률 박막/고 굴절률 박막의 3층 다층 박막 구조의 광학설계 시뮬레이션 결과와 측정된 광 반사율 특성결과는 파장 대역에 걸쳐 유사한 경향이 있는 것으로 측정되었다. 근적외선 780nm에서 1200nm파장 대역 영역에서 광 반사율 45%이상의 성능을 갖는 다층 박막 필름을 제작할 수 있었고 근적외선 차단 기능 박막으로 사용될 것으로 기대된다.

• 전기전자학회논문지
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• 제12권3호
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• pp.131-137
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• 2008

실리콘 박막 코팅을 이용한 WDM용 파장가변 실리콘 파브리-페로 열광학 필터를 제안하고 실험하였다. 실리콘 파브리-페로 파장가변 필터는 일반적인 실리콘 웨이퍼를 CMP 공정을 통해 100${\mu}m{\pm}$1%의 두께로 가공하여 양면에 거울면을 갖도록 박막 코팅하고 온도를 변화시키기 위해 PTC 써미스터를 부착하여 제작하였다. 거울면의 형성은 1550nm를 중심 파장을 갖도록 양면에 굴절율이 다른 물질 $SiO_2$($n_{low}$=1.44)와 a-Si($n_{high}$=3.48)을 ${\lambda}$/4의 두께로 증착시켜 2층 박막과 3층 박막의 거울면을 제작하였다. 실험결과, 2층 박막의 경우 FSR이 3.61nm, FWHM이 0.56nm, finesse가 6.4로 나타났고, 3층 박막의 경우 FSR이 3.36nm, FWHM이 0.13nm, finesse가 25.5로 나타났다. 열광학 효과에 의한 파장 이동은 2층 박막 거울을 가진 필터의 경우 온도가 $23^{\circ}C$에서 투과 중심 파장이 1549.73nm $30^{\circ}C$에서 1550.91nm, $60^{\circ}C$에서 1553.46nm로 파장 이동을 하였고, 3층 박막 거울을 가진 필터의 경우는 온도가 $23^{\circ}C$에서 투과 중심 파장이 1549.83nm, $30^{\circ}C$에서 1550.92nm, $60^{\circ}C$에서 1553.07nm로 파장 이동을 하였다.

• Journal of information and communication convergence engineering
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• 제5권2호
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• pp.116-120
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• 2007

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that $I_{dark}\;is\;{\sim}10^{-13}\;A,\;I_{photo}\;is\;{\sim}10^{-9}\;A\;and\;I_{photo}/I_{dark}\;is\;{\sim}10^4$, respectively. In the case of a-Si:H TFT, it indicates that $I_{on}/I_{off}\;is\;10^6$, the drain current is a few ${\mu}A\;and\;V_{th}\;is\;2{\sim}4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 volts in ITO of photodiode and $70 {\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.