• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.118-121
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• 1995

Fabrication and a new analytical expression for the capacitance characteristics of hydrogenerated amorphous silicon thin film transistors(a-Si:H TFTs) is presented and experimentally verified. The results show that the experimental capacitance characteristics are easily measeured. Measured transfer and DC output characteristic curves of a-Si:H TFT are similar to those of the standard MOSFET-IC. The capacitances on bias voltages are in good agreement with experimental data. This capacitance characteristics is suitable for incorporation into a circuit simulator and can be used for computer-aided design of a-Si thin film transistor integrated circuits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.278-282
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• 2004

The Hydrogenated amorphous carbon(a-C:H) thin films are deposited on silicon with a close field unbalanced magnetron(CFUBM) sputtering systems. The experimental data are obtained on the depositon rate and physical properties of a-C:H films using DC bias voltage and Ar/C$_2$H$_2$ pressure. The depostion rate and the surface roughness decrease with DC bias voltage, but the hardness of the thin films increases with DC bias voltage. And the position of G-peak moves to lower wavenumber indicating an increase in diamond-like carbon characteristics with the lower Ar/C$_2$H$_2$ pressure.

• Journal of the Korean institute of surface engineering
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• v.34 no.3
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• pp.258-263
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• 2001

Siloxane thin films were fabricated on a silicon wafer by spin-coating using a siloxane solution made by the sol-gel process. Fluorine was doped using$ CF_4$ plasma treatment. The film was then annealed in-situ state in the nitrogen atmosphere. In order to examine the influence of annealing and fluorine doping on the siloxane thin film, thermogravimetric-differential thermal analysis (TG-DTA), Fourier transform-infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used and the dielectric constant was determined by the high-frequency capacitance-voltage method. Stable siloxane films could be obtained by in-situ annealing in a nitrogen atmosphere after $CF_4$ plasma treatment, and the dielectric value of the film was $\varepsilon$ 2.5.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.34-41
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• 1993

Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

• Journal of Information Display
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• v.7 no.1
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• pp.35-40
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• 2006

Organic light-emitting diode (OLED) display panel using the charge-pump (CP) pixel addressing scheme was fabricated, and the results show that it is applicable for information display. A CP-OLED panel with 64 ${\times}$ 64 pixels consisting of thin-film capacitors and amorphous silicon Schottky diodes was fabricated using conventional thin-film processes. The pixel drive circuit passes electrical current into the OLED cell during most of the frame period as in the thin-film transistor (TFT)-based active-matrix (AM) OLED displays. In this study, the panel was operated at a voltage level of below 4 V, and this operation voltage can be reduced by eliminating the overlap capacitance between the column bus line and the common electrode.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1115-1122
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• 1994

ZT/PZT/ZT multi-layered thin films were deposited on silicon substrate by co-sputtering method for FEMFET device application. Effects of Pb/(Zr+Ti) ratio, films thickness, annealing conditions and substrate temperature on the ferroelectric behavior of the multi-layered films were studied. The best memory device characteristics with leakage current of 2$\times$10-8 A/$\textrm{cm}^2$ and breakdown field of about 1 MV/cm could be obtained with ZT(250 $\AA$) / PZT(1000 $\AA$)/ZT(750 $\AA$) multi-layered thin film deposited at 35$0^{\circ}C$ and post-annealed at $700^{\circ}C$ for 120 sec by RTA(Rapid Thermal Annealing).

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.703-706
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• 2006

Zinc oxide nanocrystals are attractive candidates for a solution-processable semiconductor for high performance thin film field effect transistors. We have studied ZnO thin film transistor fabricated by solution process and have improved $V_{th}$ by controlling the ZnO ink additives. Synthesized ZnO nanoparticles of 30nm were dispersed in solvent to make the ZnO ink. ZnO ink was spin coated on silicon wafer and after heat treatment electrodes were patterned.

• Journal of Information Display
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• v.13 no.1
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• pp.51-54
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• 2012

In this study, the bias-temperature stress and current-temperature stress induced by the electrical stabilities of half-Corbino hydrogenated-amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with different gate electrode geometries fabricated on the same substrate were examined. The influence of the gate pattern on the threshold voltage shift of the half-Corbino a-Si:H TFTs is discussed in this paper. The results indicate that the half-Corbino a-Si:H TFT with a patterned gate electrode has enhanced power efficiency and improved aperture ratio when compared with the half-Corbino a-Si:H TFT with an unpatterned gate electrode and the same source/drain electrode geometry.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.378-382
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• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.391-394
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.