• 대한금속재료학회지
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• 제49권11호
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• pp.874-881
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• 2011

The present study describes a new technique to extract the primary silicon from an Al-Si alloy melt using centrifugal force during its solidification. The primary silicon was separated from an Al-50 wt.%Si alloy by centrifugal force in the form of a foam, which facilitated subsequent acid leaching to extract the pure silicon due to its wide surface area. The foam recovery after centrifugal separation was decreased as centrifugal acceleration was increased. The final recovery after acid leaching became closer to the solid fraction of the alloy, which was calculated from the Al-Si binary phase diagram, with increasing centrifugal acceleration due to the effective removal of the attached Al on the foam. The purity of the primary silicon obtained by the centrifugal separation method was over 99.99%, with only aluminum being also present.

• 한국결정성장학회지
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• 제15권2호
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• pp.45-50
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• 2005

규소 표면의 기계적 손상은 산화 공정 중에 규소 표면에 여러 가지 형태의 결함들을 발생 시킨다. 규소 표면에 손상을 주는 마모 입자가 커짐에 따라 OISF보다는 etch pit의 형상이 동굴형인 선 결함(line defects)들이 많이 발생된다. 이들 결함들은 실리콘 결정을 성장시키는 단계에서 형성되는 결함들과는 상호 관련이 없다. 방향성 응고법으로 성장된 규소 결정속에 존재하는 결함들은 주로 twin과 stacking fault들이며 응고과정에서 발생이 예상되는 응력에 의한 전위는 거의 발견되지 않았다. 따라서 Czochralski 법으로 성장된 단 결정 규소뿐 아니라 방향성 응고법으로 성장된 다 결정 규소 기판도 표면의 결함들을 이용하여 extrinsic gettering을 통한 규소 결정 내부의 불순물 제거의 가능성이 높다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권1호
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• pp.1-10
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• 2005

This paper presents the development of a microsystem for whole blood purification and electrophysiological analysis of the purified cells. Magnetophoresis using continuous diamagnetic capture (DMC) was utilized for whole cell purification and electrical impedance spectroscopy (EIS) was utilized for electrophysiological analysis of the purified cells. The system was developed on silicon and plastic substrates utilizing conventional microfabrication technologies and plastic microfabrication technologies. Using the magnetophoretic microseparator, white blood cells were purified from a sample of whole blood. The experimental results of the DMC microseparator show that 89.7% of the red blood cells (RBCs) and 72.7% of the white blood cells (WBCs) could be continuously separated out from a whole blood using an external magnetic flux of 0.2 T. EIS was used as a downstream whole cell analysis tool to study the electrophysiological characteristics of purified cells. In this work, primary cultured bovine chromaffin cells and human red blood cells were characterized using EIS. Further analysis capabilities of the EIS were demonstrated by successfully obtaining unique impedance signatures for chromaffin cells based on the whole cell ion channel activity.

• Bulletin of the Korean Chemical Society
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• 제9권1호
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• pp.15-17
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• 1988

Titanium tetrachloride is purified using adsorption column packed with activated silica gel. When 120 ml of titanium tetrachloride was passed through an adsorption column filled with 7 g silica gel, iron content in titanium tetrachloride has been reduced from 7 ppm to less than 1 ppm, and aluminum from 46 ppm to 11 ppm, while silicon content being unchanged at about 60 ppm.

• 한국광물학회지
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• 제22권3호
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• pp.191-197
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• 2009

고순도 금속급 실리콘 제조에서는 원료가 되는 실리카 광물의 $SiO_2$ 품위가 매우 중요한 요소이다. 베트남 규사광에 대한 광물학적 분석결과를 토대로, 석영과 불순광물의 광물학적 특성차이를 이용하는 분급, 비중 및 자력선별을 포함하는 물리적 종합정제공정을 구성하여 적용시켰다. $SiO_2$ 품위 99.8 wt% 이상의 고순도 규사 정광을 93 wt% 이상 회수하였다. 이러한 고순도 규사 정광은 금속급 실리콘의 순도 규격에 적합하였다.

• Composites Research
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• 제35권1호
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• pp.23-30
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• 2022

폴리카보실란은 탄화규소 섬유 방사와 세라믹 제조를 위해 필요한 중요한 전구체이며, 이 전구체는 제조방법 및 공정에 따라 고내열성 및 내산화성 및 연속적인 탄화규소 섬유 생산 능력이 달라진다. 탄화규소 섬유는 폴리카보실란의 합성, 정제 및 분자구조제어기술, 그리고 이를 이용한 용융방사 및 안정화, 열처리 공정을 통해 제조된다. 본 논문에서는 폴리카보실란 전구체를 다양한 용매처리를 통하여 전구체 내에 존재하는 미반응물 및 저분자량의 정제효과를 파악하였으며, 또한 다양한 온도에서의 열처리에 따른 폴리카보실란 전구체의 중합 및 네트워크 재배열에 의한 변화에 대해 열적 분석을 실시하였다. 특히, 폴리카보실란 전구체의 유변물성 특성을 통해 용매처리 및 열처리에 따른 복합점도 및 구조적 배열의 변화를 분석하였다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1009-1010
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• 2006

In this study, we attempt to synthesize the cordierite from the reaction of fly-ash, alumina, silicon dioxide, and magnesia powders. For the purpose of air purification, the honeycomb filter with porous cordierite was fabricated from the combination of synthetic cordierite and pore forming agent. Fabricated porous cordierite honeycomb was prepared with high porosity (58%), and good compressive strength (69MPa).

• Korean Chemical Engineering Research
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• 제50권2호
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• pp.310-316
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• 2012

활성탄소 분말과 탄소필터를 이용하여 실리콘 폐슬러리에서 회수한 폴리에틸렌글리콜(polyethylene glycol, PEG) 폐액의 색도 개선연구를 수행하였다. 활성탄소의 사용량, 흡착온도 및 흡착시간 변화에 따른 색도 변화를 관찰하였다. 탄소필터를 사용할 경우 충진된 활성탄소의 재생에 따른 성능 저하 여부를 검정하였다. 활성탄소의 표면적은 색도 개선에 큰 영향을 주지 않았다. 흡착제 함량에 따른 색도 변화 결과로부터 흡착제의 최적 사용량은 100~150 mg-C/g-PEG이였다. 흡착제 양을 고정하고 흡착 온도를 상온에서 $100^{\circ}C$까지 변화시키면서 PEG의 APHA(American Public Health Association) 색 값을 관찰한 결과 폐 PEG의 색도 개선을 위해서는 $40{\sim}50^{\circ}C$ 온도에서 운전하는 것이 가장 효과적이었다. 활성탄소필터의 운전 조건별 APHA 특성을 관찰하였고 APHA=53인 폐 PEG를 $APHA{\leq}10$로 정제 가능함을 확인하였다. 흡착에 사용된 활성탄소필터는 증류수를 순환시켜 세척함으로써 큰 성능 저하 없이 효과적으로 재생됨을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.