• Title/Summary/Keyword: Silicon powder

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Preparation of Self-reinforced Silicon Carbide Ceramics by Hot Pressing (가압소결에 의한 자체강화 탄화규소 세라믹스의 제조)

  • Park, Jong-Gon;Lee, Jong-Kook;Seo, Dong-Seok;Kim, Min-Jeong;Lee, Eun-Gu;Kim, Hwan
    • Journal of the Korean Ceramic Society
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    • v.36 no.12
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    • pp.1356-1363
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    • 1999
  • Self-reinforced silicon carbide was prepared by hot pressing and the control of starting phases of raw materials and its microstructural characteristics was investigated. The specimens with self-reinforced microstructure were obtained from the compacts with mixed compositions of ${\alpha}$-and ${\beta}$-SiC powders. Self-reinforced microstructure which is composed of large dispersed grains with rod-like shape and matrix with small equiaxed grains was formed by the transformation to the ${\alpha}$-SiC with 4H polytype for ${\beta}$-SiC and anisotropic grain growth during the heat treatment. Of all speimens the values of volume fraction maximum length and aspect ratio for large grains with rode-like types were the highest at the specimen with 50 vol% ${\beta}$-SiC in the starting SiC powder and therefore this specimen showed the highest fracture toughness due to the crack deflection by rod-like grains during crack propagation.

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Effect of Increased Oxygen Content due to Intensive Milling on Phase and Microstructural Development of Silicon Nitride

  • Kim, Hai-Doo;Ellen Y. Sun;Paul F. Becher;Kim, Hyo-Jong;Han, Byung-Dong;Park, Dong-Soo
    • Journal of the Korean Ceramic Society
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    • v.38 no.5
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    • pp.405-411
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    • 2001
  • Compacts of a mixture of fine $\alpha$-Si$_3$N$_4$powders, 6% $Y_2$O$_3$and 1% $Al_2$O$_3$were attrition milled time on phase and microstructural development in silicon nitride ceramics. The sintered surface and the interior showed different behaviors in phase and microstructral developments. Increased oxygen content with increased milling time of powder mixture leads to the formation of Si$_2$$N_2$O phase at temperatures as low as 155$0^{\circ}C$. Si$_2$$N_2$O is stable in the interior of the samples but unstable in the surface region of the specimen sintered at higher temperature. This results in a duplex structure where the interior consists of Si$_2$$N_2$O grains dispersed in $\beta$-Si$_3$N$_4$matrix and a surface which contains only $\beta$-Si$_3$N$_4$. The alpha to beta phase transformation and the microstructural development are shown to be influenced by the formation and decomposition of the Si$_2$$N_2$O.

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Effects of Metallic Silicon on the Synthsis of β-SiC Powders by a Carbothermal Reduction Using SiO2-C Hybrid Precursor Fabricated by a Sol-gel Process (솔-젤 공정으로 제조된 SiO2-C 복합 전구체를 사용하여 열탄소환원법에 의한 β-SiC 분말 합성에 금속 Si 첨가가 미치는 영향)

  • Jo, Yung-Chul;Youm, Mi-Rae;Yun, Sung-Il;Cho, Gyoung-Sun;Park, Sang-Whan
    • Journal of the Korean Ceramic Society
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    • v.50 no.6
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    • pp.402-409
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    • 2013
  • The objective of this study was to develop a synthesis process for ${\beta}$-SiC powders to reduce the synthesis temperature and to control the particle size and to prevent particle agglomeration of the synthesized ${\beta}$-SiC powders. A phenol resin and TEOS were used as the starting materials for the carbon and Si sources, respectively. $SiO_2$-C hybrid precursors with various C/Si mole ratios were fabricated using a conventional sol-gel process. ${\beta}$-SiC powders were synthesized by a carbothermal reduction process using $SiO_2$-C hybrid precursors with various C/Si mole ratios (1.6 ~ 2.5) fabricated using a sol-gel process. In this study, the effects of excess carbon and the addition of Si powders to the $SiO_2$-C hybrid precursor on the synthesis temperature and particle size of ${\beta}$-SiC were examined. It was found that the addition of metallic Si powders to the $SiO_2$/C hybrid precursor with excess carbon reduced the synthesis temperature of the ${\beta}$-SiC powders to as low as $1300^{\circ}C$. The synthesis temperature for ${\beta}$-SiC appeared to be reduced with an increase of the C/Si mole ratio in the $SiO_2$-C hybrid precursor by a direct carburization reaction between Si and excess carbon.

Effect of pyrolysis temperature and pressing load on the densification of amorphous silicon carbide block (열분해 온도와 성형압력의 영향에 따른 비정질 탄화규소 블록의 치밀화)

  • Joo, Young Jun;Joo, Sang Hyun;Cho, Kwang Youn
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.6
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    • pp.271-276
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    • 2020
  • In this study, an amorphous SiC block was manufactured using polycarbosilane (PCS), an organosilicon polymer. The dense SiC blocks were easily fabricated in various shapes via pyrolysis at 1100℃, 1200℃, 1300℃, 1400℃ after manufacturing a PCS molded body using cured PCS powder. Physical and chemical properties were analyzed using a thermogravimetric analyzer (TGA), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and universal testing machine (UTM). The prepared SiC block was decomposed into SiO and CO gas as the temperature increased, and β-SiC crystal grains were grown in an amorphous structure. In addition, the density and flexural strength were the highest at 1.9038 g/㎤ and 6.189 MPa of SiC prepared at 1100℃. The manufactured amorphous silicon carbide block is expected to be applicable to other fields, such as the previously reported microwave assisted heating element.

Thermoelectric properties of SiC prepared by refined diatomite (정제 규조토로 합성한 탄화규소의 열전특성)

  • Pai, Chul-Hoon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.4
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    • pp.596-601
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    • 2020
  • Silicon carbide is considered a potentially useful material for high-temperature electronic devices because of its large band gap energy and p-type or n-type conduction that can be controlled by impurity doping. Accordingly, the thermoelectric properties of -SiC powder prepared by refined diatomite were investigated for high value-added applications of natural diatomite. -SiC powder was synthesized by a carbothermal reduction of the SiO2 in refined diatomite using carbon black. An acid-treatment process was then performed to eliminate the remaining impurities (Fe, Ca, etc.). n-Type semiconductors were fabricated by sintering the pressed powder at 2000℃ for 1~5h in an N2 atmosphere. The electrical conductivity increased with increasing sintering time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The carrier compensation effect caused by the remaining acceptor impurities (Al, etc.) in the obtained -SiC had a deleterious influence on the electrical conductivity. The absolute value of the Seebeck coefficient increased with increasing sintering time, which might be due to a decrease in the stacking fault density accompanied by grain or crystallite growth. On the other hand, the power factor, which reflects the thermoelectric conversion efficiency of the present work, was slightly lower than that of the porous SiC semiconductors fabricated by conventional high-purity -SiC powder, it can be stated that the thermoelectric properties could be improved further by precise control of an acid-treatment process.

Synthesis and Characterization of Hollow Silicon-Carbon Composites as a Lithium Battery Anode Material

  • Han, Won-Kyu;Ko, Yong-Nam;Yoon, Chong-Seung;Choa, Yong-Ho;Oh, Sung-Tag;Kang, Sung-Goon
    • Korean Journal of Materials Research
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    • v.19 no.10
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    • pp.517-521
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    • 2009
  • Si-C composite with hollow spherical structure was synthesized using ultrasonic treatment of organosilica powder formed by hydrolysis of phenyltrimethoxysilane. The prepared powder was pyrolyzed at various temperatures ranging from 900 to 1300 $^{\circ}C$ under nitrogen atmosphere to obtain optimum conditions for Li-ion battery anode materials with high capacity and cyclability. The XRD and elemental analysis results show that the pyrolyzed Si/C composite at 1100 $^{\circ}C$ has low oxygen and nitrogen levels, which is desirable for increasing the electrochemical capacity and reducing the irreversible capacity of the first discharge. The solid Si-C composite electrode shows a first charge capacity of $\sim$500 mAhg$^{-1}$ and a capacity fade within 30 cycles of 0.93% per cycle. On the other hand, the electrochemical performance of the hollow Si-C composite electrode exhibits a reversible charge capacity of $\sim$540 mAhg$^{-1}$ with an excellent capacity retention of capacity loss 0.43% per cycle up to 30 cycles. The improved electrochemical properties are attributed to facile diffusion of Li ions into the hollow shell with nanoscale thickness. In addition, the empty core space provides a buffer zone to relieve the mechanical stresses incurred during Li insertion.

Dispersion Behaviors of Y2O3 Particles Into Aisi 316L Stainless Steel by Using Laser Cladding Technology (레이저 클래딩법을 이용한 AISI 316L 스테인리스강 내 Y2O3입자의 분산거동)

  • Park, Eun-Kwang;Hong, Sung-Mo;Park, Jin-Ju;Lee, Min-Ku;Rhee, Chang-Kyu;Seol, Kyeong-Won;Lee, Yang-Kyu
    • Journal of Powder Materials
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    • v.20 no.4
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    • pp.269-274
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    • 2013
  • The present work investigated the dispersion behavior of $Y_2O_3$ particles into AISI 316L SS manufactured using laser cladding technology. The starting particles were produced by high energy ball milling in 10 min for prealloying, which has a trapping effect and homogeneous dispersion of $Y_2O_3$ particles, followed by laser cladding using $CO_2$ laser source. The phase and crystal structures of the cladded alloys were examined by XRD, and the cross section was characterized using SEM. The detailed microstructure was also studied through FE-TEM. The results clearly indicated that as the amount of $Y_2O_3$ increased, micro-sized defects consisted of coarse $Y_2O_3$ were increased. It was also revealed that homogeneously distributed spherical precipitates were amorphous silicon oxides containing yttrium. This study represents much to a new technology for the manufacture and maintenance of ODS alloys.

Microstructure Development of Spark Plasma Sintered Silicon Carbide with Al-B-C (Al-B-C 첨가 탄화규소의 스파크 플라즈마 소결에 의한 미세구조 발달)

  • Cho, Kyeong-Sik;Lee, Kwang-Soon;Lee, Hyun-Kwuon;Lee, Sang-Jin;Choi, Heon-Jin
    • Journal of the Korean Ceramic Society
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    • v.42 no.8 s.279
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    • pp.567-574
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    • 2005
  • Densification of SiC powder with additives of total amount of2, 4, 8 $wt\%$ Al-B-C was carried out by Spark Plasma Sintering (SPS). The unique features of the process are the possibilities of a very fast heating rate and a short holding time to obtain fully dense materials. The heating rate and applied pressure were kept at $100^{\circ}C/min$ and 40 MPa, while the sintering temperature and holding time varied from 1700 - $1800^{\circ}C$ for 10 - 40 min, respectively. The SPS-sintered specimens with different amount of Al-B-C at $1800^{\circ}C$ reached near-theoretical density. The $3C{\rightarrow}6H,\;15R{\rightarrow}4H$ phase transformation of SiC was enhanced by increasing the additive amount. The microstructure of SiC sintered up to $1750^{\circ}C$ consisted of fine equiaxed grains. In contrast, the growth of large elongated grains in small matrix grains was shown in sintered bodies at $1800^{\circ}C$, and the plate-like grains interlocking microstructure had been developed by increasing the holding time at $1800^{\circ}C$. The grain growth rate decreases with increasing amount of Al-B-C in SiC starting powder, however, the both of volume fraction and aspect ratio of large grains in sintered body increased.

Effect of Dietary Supplementation of Diatom Melosira nummuloides and Lactic Acid Bacteria Lactobacillus plantarum on the Growth and Immune Stimulation Responses of Olive Flounder Paralichthys olivaceus (규조류 및 유산균 첨가 사료 공급에 따른 넙치(Paralichthys olivaceus)의 성장 및 비특이적 면역 촉진 반응에 미치는 영향)

  • Noh, Yun-Hye;Kim, Ki-Hyuk;Moon, Hye-Na;Go, Gyung-Min;Yeo, In-Kyu
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.53 no.4
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    • pp.597-605
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    • 2020
  • The diatom Melosira nummuloides is a microalga that is widely distributed in freshwater and seawater is used is used in the production of silicon and fucoxanthin. The objective of this experimental study was to determine the effects of diatom powder on the physiology of olive flounder Paralichthys olivaceus. In four feeding groups consuming 0%, 1%, 2% and 3% diatom powder. After 8 weeks of feeding, we investigated P. olivaceus growth rate, feed efficiency rate, survival rate, anti-oxidant enzyme rate, non-specific immune activity and immune gene expression. The rates of growth rate, feed efficiency rate and survival were significantly higher for olive flounder in all diatom groups than in the control. The results for anti-oxidant enzyme, superoxide dismutase and catalase showed no significance, but glutathione was significant, depending on the concentration of diatom addition. The galectin and lysozymes of immune genes were increased in the control group. Galectin and lysozymes were thought to have increased due to infections by from pathogens during the experiment period. These results suggest that the addition of diatoms to olive flounder diets is effective in enhancing growth rate and innate immunity.

Effect of Deposition Temperature on the Property of Pyrolytic SiC Fabricated by the FBCVD Method (유동층 화학기상증착법을 이용하여 제조된 열분해 탄화규소의 특성에 미치는 증착온도의 영향)

  • Kim, Yeon-Ku;Kim, Weon-Ju;Yeo, SungHwan;Cho, Moon-Sung
    • Journal of Powder Materials
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    • v.21 no.6
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    • pp.434-440
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    • 2014
  • Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at $1500-1650^{\circ}C$ has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at $1500^{\circ}C$ obtains nearly stoichiometric composition, the composition of the SiC layer coated at $1300-1400^{\circ}C$ shows discrepancy from stoichiometric ratio(1:1). $3-7{\mu}m$ grain size of SiC layer coated at $1500^{\circ}C$ is decreased to sub-micrometer (< $1{\mu}m$) $-2{\mu}m$ grain size when coated at $1400^{\circ}C$, and further decreased to nano grain size when coated at $1300-1350^{\circ}C$. Moreover, the high density of SiC layer (${\geq}3.19g/cm^3$) which is easily obtained at $1500^{\circ}C$ coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.