• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.259.2-259.2
• /
• 2014

Multi-crystal Silicon wafer를 대기압에서 리모트타입의 RF-DBD를 이용하여 에칭을 하였다. DBD소스의 전극으로 알루미늄을 사용하였고 유전체로는 알루미나를 사용하였다(전극 갭을 기록). 전원공급은 13.56 MHz RF 전원장치를 이용하였으며 아르곤과 SF6 유량을 변수로 하여 실험하였다. Ar 유량은 2~10 slm, SF6는 0.2~1 slm으로 변화를 주어 최적화 조건을 찾았다. 결론적으로 SF6의 유량이 증가할수록 Si 에칭율이 증가하였다. 그러나 SF6의 유량이 2 lm일 때 에칭율이 감소하였다. 그리고 scan time이 45초일 때 $2.3{\mu}m/min$로 최대 에칭율을 얻었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2009.05a
• /
• pp.247-247
• /
• 2009

3차원 반도체 패키징에서 관통전극 Through Silicon Via (TSV)를 형성하기 위하여 이온과 래디컬의 활성도 조절이 가능한 pulsating inductively coupled plasma (ICP) 식각을 수행하였다. 본 식각공정에서는 펄스주파수 ($50{\sim}500Hz$)와 듀티 싸이클 ($20{\sim}99%$)을 조절하여, 플라즈마 내 이온과 래디컬들의 활성도 변화를 발생시켰다. 플라즈마 공정변수에 따라 식각형태가 달라짐을 S.E.M을 이용하여 확인했으며, 이온(SFx+, O+)과 래디컬 ($SF^*$, $F^*$, $O^*$)의 농도 및 활성도 변화를 측정하기 위하여 광학적 기술인 optical emissin spectroscopy와 전기적 특성 측정 기술인 Langmuir probe 시스템을 직접 제작 설치하여 펄스플라즈마를 진단하였다.

• Proceedings of the KIEE Conference
• /
• 1994.07a
• /
• pp.141-143
• /
• 1994

In this paper, an electrostatic micro-actuator is fabricated using flat p+ diaphragm. To avoid the buckling of the flat p+ diaphragm, the processes are designed appropriately. The fabrication processes of the actuator are the anisotropic etching with EPW, the boron diffusion process, Al deposition and the silicon to glass bonding using the negative photoresist. The distance between the p+ and Al electrodes is $10{\mu}m$, and the thickness of the p+ diaphragm is $2{\mu}m$. The measurement of the characteristic of the actuator is performed at 50V. The center displacement of the diaphragm is $1.5{\mu}m$ at 10Hz. In comparison with the experimental data of the actuator with corrugated diaphragm, it is confirmed that the actuator with flat diaphragm is more effective than that with corrugated one in the small deflection region.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.559-560
• /
• 2006

The paper presents solutions of conventional piezoresistive pressure sensors. Deflection of diaphragm by external stress causes some problems, because the electrode is deposited on the diaphragm formed piezoresistors. To solve these problems, piezoresistors is formed by two implantation steps. To fabricate diaphragm, the backside silicon etching step is done by immersing the wafer into TMAH solution. $30{\mu}m$ thick diaphragm is obtained. Sensitivity of the piezoresistive pressure sensor fabricated is 48.6 mV/V-psi.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.4
• /
• pp.280-285
• /
• 2003

The influence of silicon surface damage on nickel-silicide (NiSi) has been characterized and H$_2$ anneal and TiN rapping has been applied to suppress the electrical, morphological deterioration phenomenon incurred by the surface damage. The substrate surface is intentionally damaged using Ar IBE (Ion beam etching) which can Precisely control the etch depth. The sheet resistance of NiSi increased about 18% by the surface damage, which is proven to be mainly due to the reduced silicide thickness. It is shown that simultaneous application of H: anneal and TiN capping layer is highly effective in suppressing the surface damage effect.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.6
• /
• pp.189-192
• /
• 2009

The leakage current in a CMOS image sensor (CIS) can have various origins. Leakage current investigations have focused on such things as cobalt-salicide, source and drain scheme, and shallow trench isolation (STI) profile. However, there have been few papers examining the effects on leakage current of nitride stringers that are formed by gate sidewall etching. So this study reports the results of a series of experiments on the effects of a nitride stringer on real display images. Different step heights were fabricated during a STI chemical mechanical polishing process to form different nitride stringer sizes, arsenic and boron were implanted in each fabricated photodiode, and the doping density profiles were analyzed. Electrons that moved onto the silicon surface caused the dark leakage current, which in turn brought up the speckle defect on the display image in the CIS.

• ETRI Journal
• /
• v.35 no.4
• /
• pp.603-609
• /
• 2013

In this paper, we present a 600-V reverse conducting insulated gate bipolar transistor (RC-IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC-IGBT uses the deep reactive-ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC-IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT.

• Proceedings of the Optical Society of Korea Conference
• /
• 2006.07a
• /
• pp.149-150
• /
• 2006

• Proceedings of the KIEE Conference
• /
• 1999.07g
• /
• pp.3292-3294
• /
• 1999

In this paper, electrostatic scanner mirror for optical pick-up head is designed and fabricated. The mirror size is $20{\mu}m{\times}2400{\mu}m{\times}2400{\mu}m$ and torsional beam size is $10{\mu}m{\times}20{\mu}m{\times}500{\mu}m$. Static deflection angle is calculated ${\pm}0.4$ degrees when the maximum driving voltage is 20 V. Silicon mirror was fabricated using KOH etching and deep RIE. For passivation of the patterned mirror from KOH solution, parylene thin film was used and its usefulness has been verified. Driving electrode was fabricated using UV LIGA process. Mirror and electrode were bonded.

• Proceedings of the KIEE Conference
• /
• 1999.07g
• /
• pp.3328-3330
• /
• 1999

In this paper, the fabrication of a micro actuator with a micro electromagnet and an actuator diaphragm is presented. The micro electromagnet consists of a magnetic core and a micro inductive planar coil. The actuator diaphragm is the p+ silicon diaphragm on both sides of which magnetostrictive materials are deposited by sputtering. The micro electromagnet is fabricated by sputtering, evaporating, etching and electroplating. The magnetic flux density of the micro electromagnet is measured by using the gauss meter. The deflection of the actuator diaphragm is measured by using the laser vibrometer and optic microscope.