• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.349-353
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• 2016

We prepared a number of reaction-bonded silicon carbides (RBSCs) made from various mixing ratios of raw SiC particles, and investigated their microstructure and etch characteristics by Reactive Ion Etch (RIE). Increasing the amount of $9.5{\mu}m$-SiC particles results in a microstructure with relatively coarser Si regions. On the other hand, increasing that of $2.6{\mu}m$-SiC particles produces much finer Si regions. The addition of more than 50 wt% of $2.6{\mu}m$-SiC particles, however, causes the microstructure to become partially coarse. We also evaluated their etching behaviors in terms of surface roughness (Ra), density and weight changes, and microstructure development by employing Confocal Laser Scanning Microscope (CLSM) and Scanning Electron Microscope (SEM) techniques. During the etching process of the prepared samples, we confirmed that the residual Si region was rapidly removed and formed pits isolating SiC particles as islands. This leads to more intensified ion field on the SiC islands, and causes physical corrosion on them. Increased addition of $2.6{\mu}m$-SiC particles produces finer residual Si region, and thus decreases the surface roughness (Ra.) as well as causing weight loss after etching process by following the above etching mechanism.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.192-194
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• 1993

In this paper, a silicon piezoresistive accelerometer of which the cantilevers have uniform thickness is designed and fabricated with SOI wafer. The accelerometer consists of a seismic mass and four cantilevers, and is fabricated mainly by the anisotropic etching method using EPW etchant. The fabrication processes are that of the frontside processes including the etching of the cantilevers and the doubleside alignment holes, the diffusion of the piezoresisters and patterning of the contact windows, and the metal connection process, and that of the backside processes including the etching of the shallow cavity and the seismic mass. Because of the uniformity of thickness, the performance of the accelerometer fabricated with SOI wafer is expected to be better than that of accelerometer fabricated by the time-controlled etching method.

• Journal of the Optical Society of Korea
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• v.14 no.2
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• pp.163-169
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• 2010

Novel wafer-level fabrication of a glass ball-lens is realized for optoelectronic applications. A Pyrex wafer is bonded to a silicon wafer and cross-cut into a square-tile pattern, followed by wet-etching of the underlying silicon. Cubes of Pyrex on the undercut silicon are then turned into ball shapes by thermal reflow, and separated from the wafer by further etching of the silicon support. Radial variation and surface roughness are measured to be less than ${\pm}3\;{\mu}m$ and ${\pm}1\;nm$, respectively, for ball diameter of about $500\;{\mu}m$. A surface defect on the ball that is due to the silicon support is shown to be healed by using a silicon-optical-bench. Optical power-relay of the ball lens showed the maximum efficiency of 65% between two single-mode fibers on the silicon-optical-bench.

• Journal of Electrical Engineering and Technology
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• v.7 no.3
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• pp.396-400
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• 2012

Novel fabrication method of nanobridge array of various materials was proposed using suspended silicon nanowire array as a sacrificial template structure. Nanobridges of various materials can be simply fabricated by direct deposition with thermal evaporation on the top of prefabricated suspended silicon nanobridge arrays, which are used as a sacrificial structure. Since silicon nanowire can be easily removed by selective dry etching, nanobridge arrays of an intended material are finally obtained. In this paper, metal nanobridges of Ti/Au, around 50-200 nm in thickness and width, 5-20 ${\mu}m$ in length were fabricated to prove the advantages of the proposed nanowire or nanobridge fabrication method. The nanobridges of Ti/Au after complete removal of sacrificial silicon nanowire template were well-established and bending of nanobridge caused by the tensile stress was observed after silicon removing. Up to 50 nm and 10 ${\mu}m$ of silicon nanowire in diameter and length respectively was also very useful for nanowire templates.

• Journal of the Optical Society of Korea
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• v.17 no.5
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• pp.423-427
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• 2013

We present the preparation and characteristics of liquid-phase sensors based on nano-porous silicon multilayer structures for determination of organic content in gasoline. The principle of the sensor is a determination of the cavity-resonant wavelength shift caused by refractive index change of the nano-porous silicon multilayer cavity due to the interaction with liquids. We use the transfer matrix method (TMM) for the design and prediction of characteristics of microcavity sensors based on nano-porous silicon multilayer structures. The preparation process of the nano-porous silicon microcavity is based on electrochemical etching of single-crystal silicon substrates, which can exactly control the porosity and thickness of the porous silicon layers. The basic characteristics of sensors obtained by experimental measurements of the different liquids with known refractive indices are in good agreement with simulation calculations. The reversibility of liquid-phase sensors is confirmed by fast complete evaporation of organic solvents using a low vacuum pump. The nano-porous silicon microcavity sensors can be used to determine different kinds of organic fuel mixtures such as bio-fuel (E5), A92 added ethanol and methanol of different concentrations up to 15%.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.121-127
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• 2008

This paper presents design and fabrication of optimized geometry structure of electrostatic inkjet head. In order to verify effect of geometry shape, we simulate electric field intensity according to the head structure. The electric field strength increases linearly with increasing height of the micro nozzle. As the nozzle diameter decreases, the electric field along the periphery of the meniscus can be more concentrated. We design and fabricate the electrostatic inkjet heads, hole type and pole type, with optimized structure. It was fabricated using thick-thermal oxidation and silicon micromachining technique such as the deep reactive ion etching (DRIE) and chemical wet etching process. It is verified experimentally that the use of the MEMS inkjet head allows a stable and sustainable micro-dripping mode of droplet ejection. A stable micro dripping mode of ejection is observed under the voltages 2.5 kV and droplet diameter is $10\;{\mu}m$.

• Transactions of Materials Processing
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• v.13 no.4
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• pp.326-333
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• 2004

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as a potential application to fabricate the surface nanosctructures because of its operational versatility and simplicity. However, nanoprobe based on lithography itself is not suitable for mass production because it is time a consuming method and not economical for commercial applications. One solution is to fabricate a mold that will be used for mass production processes such as nanoimprint, PDMS casting, and others. The objective of this study is to fabricate the silicon stamper for PDMS casting process by a mastless fabrication technique using the combination of nano/micro machining by Nanoindenter XP and KOH wet etching. Effect of the Berkovich tip alignment on the deformation was investigated. Grooves were machined on a silicon surface, which has native oxide on it, by constant load scratch (CLS), and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structures was made because of the etch mask effect of the mechanically affected layer generated by nanoscratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved groove and convex structures were used as a stamper for PDMS casting process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.140-143
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• 2013

Lowering surface reflectance of silicon wafer by texturization is one of the most important processes to improve the efficiency of silicon solar cells. Generally, the texturing of crystalline silicon was carried out using alkaline solution. The average reflectance of this method was 11% at the wavelength between 400 and 1,000 nm. In this study, the wafers were first texturing by NaOH solution at $80^{\circ}C$ for 35 min. Then the wafers were texturing by $SF_6$ and $O_2$ plasma in RIE (Reactive Ion Etching). The average reflectance of two step texturing was reduced to below 5% at the wavelength between 400 and 1,000 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.651-657
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• 2000

The notching effect in etching of undoped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma. First in the region of small line width the potential increased as a result of ions in the exposed surface of oxide and the incident ions between the small line widths were deflected more wide range therefore the depth of notching was shallow and wide. Second in the region of large line width of gate electrons were charged on the top of photoresist and the side of gate a part of ions deflected. The deflected ions were partly charged positive on the side of gate and then these partly charged ions produced potential difference. Therefore ions stored up more at independent line than at dense line and notching became deeper by Br ion bombardments.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3451-3455
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• 2013

Single-crystalline silicon nanowires (SiNWs) were fabricated by using an electroless metal-assisted etching of bulk silicon wafers with silver nanoparticles obtained by wet electroless deposition. The etching of SiNWs is based on sequential treatment in aqueous solutions of silver nitrate followed by hydrofluoric acid and hydrogen peroxide. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the Si substrate were produced. Free-standing SiNWs were then obtained using ultrasono-method in toluene. Alkyl-derivatized SiNWs were prepared to prevent the aggregation of SiNWs and obtained from the reaction of SiNWs and dodecene via hydrosilylation. Optical characterizations of SiNWs were achieved by FT-IR spectroscopy and indicated that the surface of SiNWs is terminated with hydrogen for fresh SiNWs and with dodecyl group for dodecyl-derivatized SiNWs, respectively. The main structures of dodecyl-derivatized SiNWs are wires and rods and their thicknesses of rods and wire are typically 150-250 and 10-20 nm, respectively. The morphology and chemical state of dodecyl-derivatized SiNWs are characterized by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy.