• Bulletin of the Korean Chemical Society
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• 제29권5호
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• pp.1018-1024
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• 2008

Photolysis of 2-(pentamethyldisilanyloxy)phenylpentamethyldisilane 1 in methanol provides five photoproducts 3, 4, 5, 6, and 7. Compounds 3 and 4 were probably formed from the methanol addition reactions of silene intermediate 2 and the formation of 5, 6, and 7 can best be explained by the nucleophilic attack of methanol to silicon atom in pentamethyldisilanyloxy or pentamethyldisilanyl group of the photoexcited state of 1. Irradiation of 1 in n-hexane gives a photoproduct 6 via silyl radical intermediate 8 and a novel intramolecular cyclization photoproduct 11 via silene 9 and silyl radical intermediate 10. Irradiation of 1 in deaerated methylene chloride in the presence of acetone affords a novel photoproduct 11 and phenol 7 but the expected photoproducts from the reaction of the silene intermediate with acetone were not obtained.

• 한국표면공학회지
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• 제40권5호
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• pp.214-218
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• 2007

The objective of this study is to evaluate the diffusion behavior of Al and Si from a coatings in the microstucture of Fe-Si steel. Steel samples deposited with Al-Si alloy are prepared by ion plating process, followed by annealing treatments for diffusion at $1050^{\circ}C$. Several intermetallic phases are found in the coatings and they are identified as Fe-Al and an orderd Fe-Si compounds. Series of different concentration profiles through the sample have been obtained and Si content reaches about 5 wt% in case of 90 minutes of diffusion time.

• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1331-1336
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• 2009

Photolysis of (2-hydroxyethoxyphenyl)pentamethyldisilane 2 in benzene provides a novel intramolecular cyclization photoproduct 9 which was probably formed from the intramolecular reaction to form a seven-membered ring in silatriene intermediate 7 and then the photochemical disrotatory ring closure of 1,3-butadiene moiety to cyclobutene. Irradiation of 2 in methanol afforded photoproducts 5 and 6 which were formed by the nucleophilic attack of methanol to $\beta$ or $\alpha$ silicon atom in pentamethyldisilanyl group of the photoexcited state of 2. Compounds 10 and 11 were also formed by the same way as in the formation of the photoproducts 5 and 6 in the photolysis of (2-allyloxyethoxyphenyl)pentamethyldisilane 3 in methanol solvent. Photoreaction of (2-acetoxyethoxyphenyl) pentamethyldisilane 4 in methanol gave a photoproduct 12 which was formed via the elimination of dimethylsilylene species in the photoexcited state of 4.

• Bulletin of the Korean Chemical Society
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• 제8권1호
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• pp.6-9
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• 1987

The study of the $Na_3YSi_3O_9$ structure, by x-ray diffraction and infrared spectrum, showed that $Na_3YSi_3O_9$ is similar to $Na_4CaSi_3O_9$ except for its being pseudo-cubic instead of cubic. The peaks in the x-ray diffraction pattern of $Na_3YSi_3O_9$ could therefore be indexed on the basis of the $Na_4CaSi_3O_9$ cell. Also, modified $Na_3MSi_3O_9$ (M = Lu, Yb, Tm, Er, Y, Ho, Dy, Gd, Eu, and Sm) type compounds were synthesized by introducing excess sodium, decreasing M(III) concentration, and substituting small amount of phosphorus for silicon. The unit cell parameters of the composition $Na_{3.2}M_{0.7}Si_{2.9}P_{0.1}O_{8.7}$ were estimated from x-ray powder diffraction patterns using the Cohen method.

• Bulletin of the Korean Chemical Society
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• 제16권10호
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• pp.915-923
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• 1995

The parameters for an empirical net atomic charge calculation method, Modified Partial Equalization of Orbital Electronegativity (MPEOE), were determined for the atoms in organosilicon compounds and zeolites. For the organosilicon family, the empirical parameters were determined by introducing both experimental and ab initio observables as constraints, these are the experimental and ab initio dipole moments, and the ab initio electrostatic potential of the organosilicon molecules. The Mulliken population was also introduced though it is not a quantum mechanical observable. For the parameter optimization of the atoms in the aluminosilicates, the dipole moments and the electrostatic potentials which calculated from the 6-31G** ab initio wave function were used as constraints. The empirically calculated atomic charges of the organosilicons could reproduce both the experimental and the ab inito dipole moments well. The empirical atomic charges of the aluminosilicates could reproduce the ab initio electrostatic potentials well also.

• 한국진공학회지
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• 제7권3호
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• pp.169-175
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• 1998

HBr/$Cl_2/He-O_2$ 반응 기체를 이용한 반응성 이온 식각후, 폴리실리콘 표면에 형성된 잔류막을 x-선 광전자 분광법(x-ray photoelectron spectroscopy, XPS)과 전자 현미경 (scanning electron mocroscopy, SEM)을 이용하여 관찰하였다. 그 결과 잔류물은 패턴된 폴 리실리콘의 맨 윗부분에 자존하고 있었으며, 화학 결합 상태는 실리콘 산화물임이 밝혀졌다. 잔류물인 실리콘 산화물의 형성 메카니즘을 규명하기 위하여 원래의 혼합 기체 성분중 한가 지씩의 반응 기체를 제외시켜 가면서 실험하였다. 비록 플라즈마 성질이 다를지라도, 잔류물 은 산소의 존재하에서 잘 형성됨을 알 수 있었는데, 이는 휘발성이 낮은 실리콘-할로겐 화 합물이 산소에 의해 산화됨으로써 형성되는 것으로 이해하게 되었다. 또한 반응성 이온 식 각후 형성된 잔류층은 소자의 전기적 특성과 후처리 공정에 영향을 미치는 것으로 알려져 있어서, 이를 제거하기 위해 습식과 건식 후처리 공정을 도입하여 비교하였다. 그 결과 건식 공정의 경우 기체에 의해 새로운 잔류물이 형성됨을 XPS를 통하여 관찰하였다. 따라서 잔 류물을 제거하고 깨끗한 표면을 얻기 위해서는 습식 공정이 더 적합함을 알았다.

• 한국세라믹학회지
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• 제44권8호
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• pp.445-450
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• 2007

A conversion layer of SiC was fabricated on the graphite substrate by a chemical vapor reaction method in order to enhance the oxidation resistance of graphite. The effect of boron carbide containing powder bed on the morphology of SiC conversion layer was investigated during the chemical vapor reaction of graphite with the reactive silicon-source at $1650^{\circ}C\;and\;1700^{\circ}C$ for 1 h. The presence of boron species enhanced the conversion of graphite into SiC, and altered the morphology of the conversion layer significantly as well. A continuous and thick SiC conversion layer was formed only when the boron source was used with the other silicon compounds. The boron is deemed to increase the diffusion of SiOx in SiC/C system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.459-459
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• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.

• 한국재료학회지
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• 제10권6호
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• pp.450-455
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• 2000

실리콘 소자가 더욱 미세화되면서, 발생되는 power consumption, crosstalk와 interconnection delay 등을 감소시키기 위해 $SiO_2$ 대신에 저유전 상수막의 적용이 고려되어진다. 본 논문에서는, 저유전 상수 층간 절연막 재료로 유망한 폴리이미드의 식각 특성에 $O_2/SF_6$ 가스가 미치는 영향을 연구하였다. 폴리이미드의 식각률을 SF(sub)6 가스의 첨가에 따라 산소와 hydrocarbon 폴리머 간의 반응을 억제하는 비휘발성 물질은 fluorine 화합물의 형성에 의해 감소되었다. 반면에, 기판 전극의 전압 증가는 물리적인 충격을 통해 식각 공정을 증가시켰다. 또한 작은 량의 SF(sub)6 가스 첨가는 식각 topography에 바람직하였다. 폴리이미드 식각을 위한 $SiO_2$ hard mask 사용은 산소 플라즈마 식각 하에서 효과적이었다(선택비-30). 반면에 $O_2SF_6$ 가스 조성은 식각 선택비를 4로 저하시키게 되었다. 이러한 결과를 기초로, $1-2\mu\textrm{m}$ 선폭을 가진 PI 2610의 식각을 원활히 수행할 수 있었다.

• 대한화학회지
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• 제38권3호
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• pp.241-245
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• 1994

산화성 첨가반응을 이용하여 실라트란(분자내 Si-N고리횡단 상호작용을 갖는 5-배위의 규소화합물)의 규소원자와 주족원소간에 Si-M 결합작용이 있는 새로운 이종다핵 화합물을 합성하려고 시도하였다. 1-브로모실라트란(1a)과 $SnBr_2를 반응시켜 노란색(2a)과 흰색(2b)의 고체 혼합물을 얻었고 용해도 차에 의해 각각을 분리하여 ^1H-NMR, ^{29}Si-NMR, ^{119}Sn-NMR, Mass스펙트럼으로 규명한 결과 노란색 화합물만이 Si-Sn결합을 갖는 것으로 판명되었다. SnBr_2를 1-브로모-3,7,10-트리메틸실라트란(1b)과도 반응시켜 Si-Sn 결합을 갖는 화합물, N[CH_2CH(CH_3)O]_3SiSnBr_3(CH_3OH)_2(3)$을 분리하여 여러가지 방법으로 확인하였다.