• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.353-357
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• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.89-93
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• 1995

Effects of hydrogenation in amorphous silicon rile growths on Solid Phase Crystallization (SPC) was investigated using x-ray diffractometry, energy dispersive Spectroscopy, and Raman spectrum. Interdiffusion of barium(Ba) and aluminum(Al) compounds of corning substrate was observed in both of rf sputtering and LFCVD films under the low temperature(580$^{\circ}C$) annealing. Low degree of crystallinity resulted from the interdiffusion was obtained. Highly applicable degree of crystallinity was obtained through the mechanical damage induced surface activation on amorphous silicon films. X-ray diffraction intensity of (111) orientation was used to characterize the degree of crystallinity of SPC. Nucleation and growth rate in SPC could be controllable through the employed surface treatment. IIydrogenated LPCVD films showed the superior crystallinity to non-hydrogenated sputtering films. Insignificant effects of activation treatment in sputtered film was of activation treatment in sputtered film was observed on SPC.

• Journal of Medicine and Life Science
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• 제20권2호
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• pp.83-88
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• 2023

Metal artifacts cause inaccuracies in target delineation, radiation treatment planning, and delivery when computed tomography images of a radiotherapy patient implanted with a high-density material in the body are acquired. In this study, we investigated the possibility of obtaining improved images in clinical trials through metal artifact reduction using silicon impression materials without the need for a specific metal artifact reduction algorithm. A silicon impression material exhibiting a constant Hounsfield unit (HU) value according to the mixing ratio of the catalysts and bases was selected. The material did not exhibit any change in weight or shape over time. For both the instances of inserting the metal material and applying the silicon impression material, the HU value and dose were compared with homogeneous cases filled with water-equivalent materials. When the silicon impression material was applied to the region where the high-density material was located, the HU value was within 5% and the dose was within 3% compared with those of the homogeneous cases. In this study, the silicon impression materials reduced metal artifacts. However, because the composition, shape, size, and location of high-density materials differ, further studies are required to consider these factors in clinical applications.

• Journal of Photoscience
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• 제10권3호
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• pp.257-261
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• 2003

We have systematically studied the evolution of the photoluminescence(PL) tuning of porous silicon(PS) by electrochemical etching in various mixed electrolytes. The electrolytes employed as an etchants were mixtures of HF:CH$_3$COOH:HNO$_3$:C$_2$H$\_$5/OH solutions where the composition ratios (%) were varied from 10:1.98:0:88.02 to 10: 1.98:8.4:79.62 under constant concentration of HF and CH$_3$COOH with a total volume of 100 ml. Changes in the surface morphology of the samples caused by variations in the etching process were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). After samples are etched in various mixed electrolytes, FTIR analyses show that there is the non-photoluminescent state and the photoluminescent state simultaneously. The PL spectra show the PL tuning in the ranging from 560 to 700 nm with the increase of HNO$_3$ concentration. An analysis of the subsequent PL relaxation mechanism was carried out by time-correlated single photon counting (TCSPC) method. Based on experimental results, it is assumed that a red shift of the main PL peak position is related to the HNO$_3$ activated formation of silicon oxygen compounds. Therefore, the use of electrolyte mixtures with composition ratios can be obtained adequate and reproducible results for PL tuning.

• 한국화재소방학회논문지
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• 제34권1호
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• pp.1-10
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• 2020

본 연구는 건축 및 내구재용 목재인 편백 목재에 붕소/실리콘 졸 화합물을 처리한 후 화재위험성을 연기 유해성에 대하여 연기성능지수(SPI), 연기성장지수(SGI)와 연기강도(SI)를 중심으로 조사하였다. 화합물은 Tetraethoxyorthosilicate를 Boronic acid와 Boric acid 유도체와 반응시켜 합성하였다. 연기 특성은 편백목재에 대하여 Cone calorimeter (ISO 5660-1) 장비를 이용하여 조사하였다. 화재강도는 50 kW/㎡의 외부 열 유속(External heat flux)으로 고정시켰다. 연소 반응 후 측정된 연기성능지수는 편백목재와 비교하여 13.4~126.7% 증가하였다. 연기성능지수에 의한 화재위험성은 편백목재, PBA/Si, IBBA/Si, BA/Si 순서로 감소하였다. 연기성장지수는 편백목재와 비교하여 12.0~57.5% 감소하였다. 연기성장지수에 의한 화재위험성은 편백목재, PBA/Si, IBBA/Si, BA/Si 순서로 낮아졌다. 연기강도에 의한 화재위험성은 3.2~57.8% 감소하였으며 편백목재, PBA/Si, IBBA/Si, BA/Si 순서로 낮아졌다. CO_peak 농도는 85~93 ppm였으며 공시편과 비교하여 37~43% 감소하였다. 화재위험성을 연기유해성에 대해 종합적으로 평가하면 편백목재, PBA/Si, IBBA/Si, BA/Si순서로 낮아졌다.

• 한국생산제조학회지
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• 제22권3_1spc호
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• pp.504-508
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• 2013

This paper describes in detail the life prediction models and simulations of thermal fatigue under different mold compounds and chip sizes for wafer-level embedded SiP. Three-dimensional finite element models are built to simulate the viscoplastic behaviors for various mold compounds and chip sizes. In particular, the bonding parts between a mold and silicon nitride (Si3N4) are carefully modeled, and the strain distributions are studied. Three different chip sizes are used, and the effects of the mold compounds are observed. Through the numerical studies, it is found that type-C, which has a relatively lower Young's modulus and higher CTE, has a better fatigue life than the other mold compounds. In addition, the $4{\times}4$ chip has a shorter life than the $6{\times}6$ and $8{\times}8$ chips.

• 한국표면공학회지
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• 제33권2호
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• pp.77-86
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• 2000

In this study effects of La starting compounds and substrates on the densification of (P $b_{0.92}$L $a_{0.05}$)Ti $O_3$ thin films were investigated. After the heat treatment on platinized silicon at $650^{\circ}C$ for 30min thickness of PLT(i) thin films (from La-isopropoxide) shrank by 27%, while 33% reduction occurred for PLT (a) thin films (from La-acetate). These PLT(i) films showed less densified surface microstructure compared to the PLT (a) . Lower shrinkage of the films on platinized silicon than on bare silicon (41% and 40% for PLT (i) and PLT (a) respectively) is attributed to the earlier development of crystallinity in the film, which arrests film densification. In order to maximize sintering before crystallization, heat treatment at $400^{\circ}C$ for 3 hours followed by $650^{\circ}C$ for 30 min was attempted. This method increased the shrinkage of the PLT (i) and PLT (a) films two times and 1.5 times as much as that observed for the films heat treated at $650^{\circ}C$ for 30min, respectively. FTIR results indicated that first pyrolysis in the film is associated with the burning of acetate ligands. Condensation reaction between OHs was found to occur preferentially between $350^{\circ}C$ and $450^{\circ}C$, whereas majority of polycondensation between ROH-OH appears to occur until $300^{\circ}C$ and be completed below $450^{\circ}C$.EX>.

• Biotechnology and Bioprocess Engineering:BBE
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• 제9권2호
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• pp.118-126
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• 2004

Recombinant E.coli ACV 1003 (recA::lacZ) releasing ${\beta}$-galactosidase by a SOS regulon system, when exposed to DNA-damaging compounds, have been used to effectively monitor endocrine disruptors. Low enzyme activity of less than 10 units/mL, corresponding to a $\mu\textrm{g}$/L(ppb) range of an endocrine disruptor (tributyl tin, bisphenol A. etc.), can be rapidly determined, not by a conventional time-consuming and tedious enzyme assay, but by an alternative interferometric biosensor. Heavily boron-doped porous silicon for application as an interferometer, was fabricated by etching to form a Fabry-Perot fringe pattern, which caused a change in the refractive index of the medium including ${\beta}$-galactosidase. In order to enhance the immobilization of the porous silicon surface, a calyx crown derivative (ProLinker A) was applied, instead of a conventional biomolecular affinity method using biotin. This resulted in a denser linked formation. The change in the effective optical thickness versus ${\beta}$-galactosidase activity, showed a linear increase up to a concentration of 150 unit ${\beta}$-galactosidase/mL, unlike the sigmoidal increase pattern observed with the biotin.

• 한국광물학회지
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• 제20권3호
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• pp.155-163
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• 2007

국내의 실리카 광물인 규질이암으로부터 실리콘알콕사이드와 같은 실리콘 유기화합물을 합성하였다. 이 실험에서는 알카리금속염 촉매 존재 하에서 트리에탄올아민과 규질이암의 반응에 의해 트리에탄올아민의 치환체인 트리스실라트라닐옥시에틸아민의 합성이 관찰되었다. 이 트리스실라트 라닐옥시에틸아민은 산성촉매인 발연황산의 존재 하에서 메탄올과의 반응으로 메톡시실란을 얻을수가 있었으며, 이 메톡시실란과 메탄올과의반응으로 테트라메톡시실란이 합성되었다. 반응의 중간 생성물 및 최종 산물은 FT-IR, XRD, SEM, 1H and 13C NMR 및 가스크로마토그래피에 의해 확인할 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제5권1호
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• pp.32-37
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• 1984

The photoreaction of 2, 3-benzo-1, 1-diphenyl (or dimethyl)-1-sila-2-cyclobutene (9 or 10) with an aldehyde or ketone results in 1:1 cycloadduct of [4 + 2] type. In the reactions of 2, 3-benzo-1, 1-dimethyl-1-sila-2-cyclobutene (10) with acetone and butanone, another 1:1 adducts (13) were also formed, respectively. The following facts indicate that the formation of adduct involves an attack of a triplet carbonyl compound on the silicon of the benzosilacyclobutene, an $S_H2$ process. (1) Even when the reaction of 9 with acetophenone was carried out under conditions such that more than 99% of incident light was absorbed only by acetophenone using the filter solution of aq. cupric sulfate, the same adduct was still formed. (2) When the reaction of 9 with acetone was carried out under oxygen atmosphere, only trace amount of adduct was formed.