• 한국세라믹학회지
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• 제49권1호
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• pp.95-99
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• 2012

Silicon carbide ceramics are used for oxidation resistive coating films due to their excellent properties like high strength, good oxidation resistance, and good abrasion resistance, but they have poor formability and are prepared by vapor process which is complicated, costly, and sometimes hazardous. In this study, preparation of silicon carbide coating film by liquid process using polymer precursor was attempted. Coating film was prepared by dip coating on substrate followed by heat treatment in argon at $1200^{\circ}C$. By changing the dipping speed, the thickness was controlled. The effects of plasticizer, binder, or fiber addition on suppression of crack generation in the polymer and ceramic films were examined. It was found that fiber additives was effective for suppressing crack generation.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1997년도 제25회 춘계학술대회
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• pp.69-73
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• 1997

Microwave Plasma assisted CVD (Chemical Vapor Deposition) and DC Plasma CVD were used to prepare thin and thick diamond film, respectively. Diamond coated silicon nitride and fiee standing diamond thick film were eroded by silicon carbide particles. The velocity of the solid particle was about 220m/sec. Phase transformation and the other crack formation were investigated by using Raman spectroscopy and microscopy.

• 한국세라믹학회지
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• 제32권4호
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• pp.419-428
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• 1995

Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

• 한국광학회지
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• 제33권2호
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• pp.74-83
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• 2022

위성 관측 카메라용 대구경 초경량 반사광학계를 제작하기 위해 소재 개발부터 최종 시스템 인증시험까지 전 과정을 수행했다. 완성된 비점보정 3반사경 구조의 위성용 반사광학계 망원경은 주반사경의 구경이 700 mm이고, 망원경 전체 질량은 66 kg이다. 광학소재 및 구조물에 적용하기 위한 반응소결법을 개발했고, 이 방법을 이용해서 실리콘 카바이드(silicon carbide, SiC) 재질의 광학 몸체를 제작하고 소결체의 화학특성, 표면특성, 결정구조를 확인했다. 광학 몸체의 기계적, 화학적 성질을 고려한 연마와 코팅 방법을 개발했으며 화학기상증착법을 적용해 SiC 경면 표면 위에 치밀한 SiC 박막을 170 ㎛ 이상 증착함으로써 광학 성능이 우수한 경면을 만들 수 있었다. 반사경 제작 후 반사경과 지지 구조를 조립하고 정렬해서 다양한 광학 시계에 대해 파면 오차를 측정했다. 아울러 우주 환경 및 발사환경에 대한 우주 인증에 맞추어 구성품 및 최종 조립체를 온도와 진동에 대한 환경시험을 실시하여 설계 목표 성능을 달성했음을 확인했다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.196-196
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• 2008

We have investigated that the effect of post annealing on the structural and electrical properties of $Ba_{0.5}Sr_{0.5}TiO_3$ thin films. The BST thin films were deposited on n-type 4H-silicon carbide(SiC) using pulsed laser deposition (PLD). The deposition was carried out in oxygen ambient 100mTorr for 5 minutes, which results in about 300nm-thick BST films. For the BST/4H-SiC, 200nm thick silver was deposited on the BST films bye-beam evaporation. The X-ray diffraction patterns of the BST films revealed that the crystalline structure of BST thin films has been improved after post-annealing at $850^{\circ}C$ for 1 hour. The root mean square (RMS) surface roughness of the BST film measured by using a AFM was increased after post-annealing from 5.69nm to 11.49nm. The electrical properties of BST thin film were investigated by measuring the capacitance-voltage characteristics of a silver/BST/4H-SiC structure. After the post-annealing, dielectric constant of the film was increased from 159.67 to 355.33, which can be ascribed to the enhancement of the crystallinity of BST thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• 한국결정성장학회지
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• 제32권1호
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• pp.7-11
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• 2022

한미보석감정원은 최근에 5개의 투명한 합성 모이사나이트를 검사했다. 그 샘플들은 라운드 브릴리언트 컷의 무색, 핑크, 황색, 청색, 적색 컬러와 0.93~0.96 ct 중량을 가지고 있었다. FT-IR과 Raman 분석 결과 합성 모이사나이트임을 확인하였고, 확대검사 결과 무색을 제외한 나머지 샘플에서 코팅의 흔적이 발견되었다. EDXRF 분석 결과 무색 샘플을 제외한 모든 샘플의 코팅부분에서 Ca, Ti, Co의 미량원소가 검출되었다. 무색 샘플의 Raman 분석에서 탄소 원자의 sp³ bonding에 의해 생성되는 1332 cm^-1 또는 graphite와 관련된 sp² bonding에 의해 생성되는 ~1550 cm^-1는 발견되지 않았다. 무색 샘플의 SEM 이미지에서도 코팅의 흔적은 발견되지 않았으나, TEM 이미지에서 3~8 nm의 코팅층의 존재가 발견됐다. EDX line 프로파일과 EDX elements map을 통해 무색 샘플의 코팅층을 구성하는 원소는 C, Si, O로 추정된다.

• 한국세라믹학회지
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• 제34권2호
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• pp.131-138
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• 1997

희석기체로써 Ar 및 H2를 사용하여 MTS(CH3SiCl3)를 원료물질로 한 탄화규소막을 흑연 기판 위에 화학증착시켰다. 본 연구는 증착온도 130$0^{\circ}C$, 총압력은 10 torr 및 MTS와 원료 운반기체의 총유량은 100 sccm으로 일정하게한 상태에서, 각 희석기체의 첨가에 따른 성장거동의 변화를 고찰하고자 하였다. 증착속도는 희석기체와 상관없이 첨가량이 200sccm일 때 최대값을 갖는 모양을 보였으나, Ar을 첨가할 때가 H2에 비해 더 빠른 증착속도를 나타냈다. 이러한 증착속도 특성은 전체 증착속도가 물질전달 율속단계에 있을 때, 각 희석기체의 첨가에 따라 변화되는 경막 두께(boundary layer thickness) 및 원료물질 농도의 상관관계에 기인한다고 여겨졌다. 우선배향성은 Ar의 경우 모든 첨가량의 범위에서 (220)면으로 우선배향되었으나, H2의 경우에는 200sccm이상에서 첨가량에 비례하여 (111)면으로 우선배향되는 경향을 보였다. 표면미세구조는 Ar을 첨가한 경우에 일정하게 facet구조를 유지하였으나, H2의 경우에는 facet에서 평탄한(smooth)구조로 변화되었다. 표면조도의 경우 첨가량이 늘어남에 따라 지속적으로 Ar에서는 증가하였지만, H2에서는 감소하였다.