• 자원리싸이클링
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• 제31권5호
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• pp.52-58
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• 2022

태양광 폐실리콘 웨이퍼에서 회수한 실리콘과 카본블랙을 활용하여 탄화규소 분말을 제조하였다. 태양광 발전시장에서 결정질 실리콘 모듈이 90% 이상을 차지한다. 태양광 모듈의 사용기한이 도래함에 따라 환경과 경제적인 측면에서 실리콘을 회수하고 활용하는 기술은 매우 중요하다. 본 연구에서는 태양광 폐패널에서 회수한 실리콘을 탄화규소 원료로 활용하기 위하여, 순도 95.74% 폐실리콘 웨이퍼로부터 정제과정을 거쳐 99.99% 실리콘 분말을 회수하였다. 탄화규소 분말 합성특성을 살펴보기 위하여, 정제된 99.99% 실리콘 분말과 탄소분말을 혼합한 후, Ar 분위기에서 열처리(1,300℃, 1,400℃, 1,500℃)과정을 수행하였다. 실리콘과 탄화규소 분말의 특성을 입도분포, XRD, SEM, ICP, FT-IR 및 Raman 분석기를 사용하여 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.433-433
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• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.87-87
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• 2009

The composites were fabricated by adding 30, 40, 50, 60[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. SiC-$ZrB_2$ composites were sintered by Spark Plasma Sintering(hereafter, SPS) in argon gas atmosphere. The relative density SiC+30[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$, SiC+50[vol.%]$ZrB_2$ and SiC+60[vol.%]$ZrB_2$ composites are 94.98[%], 99.57[%], 96.58[%] and 93.62[%] respectively.

• Transactions on Electrical and Electronic Materials
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• 제7권6호
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• pp.301-304
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• 2006

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability make SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by atomic beam exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}\;to\;45^{\circ}$ of incident angle. Consequently, the vertical alignment effect of liquid crystal electro-optical characteristic by the atomic beam alignment method on the SiC thin film layer can be achieved.

• 자원리싸이클링
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• 제31권6호
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• pp.60-65
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• 2022

본 논문에서는 반도체용 실리콘 기판 가공 과정에서 발생한 슬러지 재활용을 위해 탄화 반응에 의한 탄화규소(SiC) 분말 합성 공정을 적용한 결과를 제시하고자 한다. 입수한 슬러지는 실리콘 기판을 탄화규소 연마재를 사용하여 가공하는 과정에서 발생하므로 실리콘과 탄화규소가 혼합된 형태였으며 가공 설비로부터 발생한 철 불순물이 포함되어 있었다. 슬러지는 절삭유가 포함되어 있어 점성이 있는 유체 형태였으며 대기 건조를 통해 분말 형태로 변화된 후 산 세정을 통한 철 성분 제거 및 탄화에 의한 탄화규소 분말 합성 과정을 거치게 된다. 슬러지에 포함된 실리콘과 탄화규소의 비율에 따라 탄화 반응에 필요한 탄소량이 달랐으며 탄화규소의 함량이 커질수록 탄소 부족 현상으로 인해 비화학량론적 탄화물(SiC_x, x<1) 형성이 촉진되어 순수한 탄화규소 합성이 이루어지지 않는 것을 확인하였다. 이러한 비화학량론적 탄화물은 잉여 탄소 추가와 고에너지 밀링에 의한 탄화 반응성 증가를 통해 제거할 수 있었으며 결과적으로 산 세정과 밀링 과정에 의해 슬러지로부터 순수한 탄화규소 분말 합성이 가능함을 확인할 수 있었다.

• Carbon letters
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• 제8권2호
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• pp.91-94
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• 2007

The application of Carbon and graphite based materials in unprotected environment is limited to a temperature of $450^{\circ}C$ or so because of their susceptibility to oxidation at this temperature and higher. To over come these obstacles a low cost chemical vapour reaction process (CVR) was developed to give crystalline and high purity SiC coating on graphite and isotropic C/C composite. CVR is most effective carbothermal reduction method for conversation of a few micron of carbon layer to SiC. In the CVR method, a sic conversation layer is formed by reaction between carbon and gaseous reagent silicon monoxide at high temperature. Characterization of SiC coating was carried out using SEM. The other properties studied were hardness density and conversion efficiency.

• 한국세라믹학회지
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• 제42권8호
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• pp.542-547
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• 2005

Keys to the attainment of tailored properties in SiC ceramics are microstructure control and judicious selection of the sintering additives. In this study, three different strategies for controlling microstructure of liquid-phase-sintered SiC ceramics (LPS-SiC) have been suggested: control of the initial $\alpha-SiC$ content in the starting powder, a seeding technique, and a post-sintering heat treatment. The strategies suggested offer substantial flexibility for producing toughened SiC ceramics whereby grain size, grain size distribution, and aspect ratio can be effectively controlled. The present results suggest that the proposed strategies are suitable for the manufacture of toughened SiC ceramics with improved toughness.

• 한국결정성장학회지
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• 제5권4호
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• pp.343-350
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• 1995

$\alpha$ - 및 $\beta$-SiC를 출발원료로 하여 일축성형한 후 $1800^{\circ}C$에서 고온가압법으로 소결한 탄화규소에 나타난 우선방위의 정도를 X-ray pole figure analysis로 조사하였다. $\alpha$-SiC를 출발원료로 사용한 경우에 고온 가압소결 후 약한 집합조직을 보인 반면, $\beta$ - SiC를 출발원료로 사용한 경우 고온가압소결 후 강한 집합조직을 보였으며, 이 경우 ${\beta} {\rightarrow} {\alpha}$ 상변태에 기인한 이중미세구조를 나타내었다. 또한, 집합조직의 강도는 고온가압소결 후 행해진 열처리 조건에 따라서도 변화를 보였다.

• 전력전자학회논문지
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• 제26권6호
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• pp.429-436
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• 2021

The design of a gate driver power supply for a three-phase inverter using a silicon carbide (SiC) MOSFET. The requirements for the power supply circuit of the gate driver for the SiC MOSFET are investigated, and a flyback converter using multiple transformers is used to make the four isolated power supplies. The proposed method has the advantage of easily constructing the power supply circuit in a limited space as compared with a multi-output flyback converter using a single core. The power supply circuit for the three-phase SiC MOSFET inverter for driving an AC motor is designed and implemented. The operation and validity of the implemented circuit are verified through simulations and experiments.

• Archives of Metallurgy and Materials
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• 제64권3호
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• pp.883-888
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• 2019

439L stainless steel composites blended with fifteen micron SiC particles were prepared by uniaxial pressing of raw powders at 100 MPa and conventional sintering at 1350℃ for 2 h. Based on the results of X-ray diffraction analysis, dissolution of SiC particles were apparent. The 5 vol% SiC specimen demonstrated maximal densification (91.5%) among prepared specimens (0-10 vol% SiC); the relative density was higher than the specimens in the literature (80-84%) prepared by a similar process but at a higher forming pressure (700 MPa). The stress-strain curve and yield strength were also maximal at the 5 vol% of SiC, indicating that densification is the most important parameter determining the mechanical property. The added SiC particles in this study did not serve as the reinforcement phase for the 439L steel matrix but as a liquid-phase-sintering agent for facilitating densification, which eventually improved the mechanical property of the sintered product.