• 제목/요약/키워드: Silicon carbide(SiC)

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실리콘 카바이드의 초정밀 연삭 가공에 관한 연구 (Research on Ultra-precision Grinding Work of Silicon Carbide)

  • 박순섭;원종호
    • 한국정밀공학회지
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    • 제26권9호
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    • pp.58-63
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    • 2009
  • Silicon carbide (SiC) has been used for many engineering applications because of their high strength at high temperatures and high resistances to chemical degradation. SiC is very useful especially for a glass lens mold whose components demanded to the machining with good surface finish and low surface damage. The performance and reliability of optical components are strongly influenced by the surface damage of SiC during grinding process. Therefore, the severe process condition optimization shall be necessary for the highly qualified SiC glass lens mold. Usually the major form of damage in grinding of SiC is a crack occurs at surface and subsurface. The energy introduced in the layers close to the surface leads to the formation of these cracks. The experimental studies have been carried out to get optimum conditions for grinding of silicon carbide. To get the required qualified surface finish in grinding of SiC, the selection of type of the wheel is also important. Grinding processes of sintered SiC work-pieces is carried out with varying wheel type, depth of cut and feed using diamond wheel. The machining result of the surface roughness and the number of flaws, have been analyzed by use of surface profilers and SEM.

폴리실리콘용 유동층 반응기에서 탄화규소의 내구성과 적합성 연구 (Endurance and Compatibility of Silicon Carbide as Fluidized Bed Reactor for Poly-silicon)

  • 최균;서진원;한윤수;손민수
    • 한국표면공학회지
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    • 제47권6호
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    • pp.354-361
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    • 2014
  • In order to utilize silicon carbide (SiC) as an inner part of fluidized bed reactor (FBR) for manufacturing poly-silicon, we have carried out the thermodynamic calculation on the overall reactions including poly-silicon synthesis and compatibility of SiC with FBR process. The resources of silicon included $SiH_4(MS)$, $SiHCl_3(TCS)$ and $SiCl_4(STC)$ and the thermodynamic yield of the FBR with MS, TCS and STC were compared each other with variable range of temperature, pressure and hydrogen to silicon ratio. The silicon yield of MS, TCS and STC were 100%, 28% and 4%, respectively, throughout the conventional FBR conditions. Silicon carbide having high hardness and strength showed strong resistance to granule collisions during the FBR process using a lab-scale reactor. And it also showed quite good compatibility with the typical FBR processes of MS and TCS resources.

Si:C Ratio가 다공질 Self-Bonded SiC 세라믹스의 기공율과 곡강도에 미치는 영향 (Effect of Si:C Ratio on Porosity and Flexural Strength of Porous Self-Bonded Silicon Carbide Ceramics)

  • 임광영;김영욱;우상국;한인섭
    • 한국세라믹학회지
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    • 제45권5호
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    • pp.285-289
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    • 2008
  • Porous self-bonded silicon carbide (SiC) ceramics were fabricated at temperatures ranging from 1750 to $1850^{\circ}C$ using SiC, silicon (Si), and carbon (C) powders as starting materials. The effect of the Si:C ratio on porosity and strength was investigated as a function of sintering temperature. It was possible to produce self-bonded SiC ceramics with porosities ranging from 36% to 43%. The porous ceramics showed a maximal porosity when the Si:C ratio was 2:1 regardless of the sintering temperature. In contrast, the maximum strength was obtained when the ratio was 5:1.

Application of nanocomposite material to avoid injury by physical sports equipment

  • Weifeng Qin;Zhubo Xu
    • Advances in nano research
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    • 제14권2호
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    • pp.195-200
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    • 2023
  • Safety in sports is important because if an athlete has an accident, he may not be able to lead an everyday life for the rest of his life. The safety of sports facilities is very effective in creating people's sports activities, with the benefits of staying away from physical injury, enjoying sports, and mental peace. Everyone has the right to participate in sports and recreation and to ensure that they want a safe environment. This study prepares a very good Nickel-Cobalt -Silicon carbide (Ni/Co-SiC) nanocomposite with convenient geometry on the leg press machine rod, employing the pulse electrodeposition technique to reduce the rod's wear and increase the durability of sports equipment and control sports damages. The results showed that the Ni/Co-SiC nanocomposite formed at 2 A/dm2 shows extraordinary microhardness. The wear speed for the Ni/Co-SiC nanocomposite created at 4 A/dm2 was 15 mg/min, showing superior wear resistance. Therefore, the Ni/Co-SiC nanocomposite can reduce sports equipment's wear and decrease sports injuries. Ni-Co/SiC nanocomposite layers with various scopes of silicon carbide nanoparticles via electrodeposition in a Ni-Co plating bath, including SiC nanoparticles to be co-deposited. The form and dimensions of Silicon carbide nanoparticles are watched and selected using Scanning Electron Microscopy (SEM).

실리콘과 카본을 이용한 다공질 탄화규소의 제조와 기계적 특성 (Fabrication and Mechanical Properties of Porous Silicon Carbide Ceramics from Silicon and Carbon Mixture)

  • 김종찬;이은주;김득중
    • 한국세라믹학회지
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    • 제50권6호
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    • pp.429-433
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    • 2013
  • Silicon, carbon, and B4C powders were used as raw materials for the fabrication of porous SiC. ${\beta}$-SiC was synthesized at $1500^{\circ}C$ in an Ar atmosphere from a silicon and carbon mixture. The synthesized powders were pressed into disk shapes and then heated at $2100^{\circ}C$. ${\beta}$-SiC particles transformed to ${\alpha}$-SiC at over $1900^{\circ}C$, and rapid grain growth of ${\alpha}$-SiC subsequently occurred and a porous structure with elongated plate-type grains was formed. The mechanism of this rapid grain growth is thought to be an evaporation-condensation reaction. The mechanical properties of the fabricated porous SiC were investigated and discussed.

Tribological Behavior of Silicon Carbide Ceramics - A Review

  • Sharma, Sandan Kumar;Kumar, B. Venkata Manoj;Kim, Young-Wook
    • 한국세라믹학회지
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    • 제53권6호
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    • pp.581-596
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    • 2016
  • A comprehensive review on sliding and solid particle erosion wear characteristics of silicon carbide (SiC) ceramics and SiC composites is provided. Sliding or erosion wear behavior of ceramics is dependent on various material characteristics as well as test parameters. Effects of microstructural and mechanical properties of SiC ceramics are particularly focused to understand tribological performance of SiC ceramics. Results obtained between varieties of pairs of SiC ceramics indicate complexity in understanding dominant mechanisms of material removal. Wear mechanisms during sliding are mainly divided in two groups as mechanical and tribochemical. In solid particle erosion conditions, wear mechanisms of SiC ceramics are explained by elastic-plastic deformation controlled micro-fracture on the surface followed by radial-lateral crack propagation beneath the plastic zone.

Industrial Applications of Si-based Ceramics

  • Eichler, Jens
    • 한국세라믹학회지
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    • 제49권6호
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    • pp.561-565
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    • 2012
  • Due to their unique combination of properties, Si-based ceramics, such as silicon carbide (SiC), silicon nitride ($Si_3N_4$) and silicon oxide ($SiO_2$ as fused silica), have a range of industrial applications in fields such as the chemical industry, aluminum manufacturing, oil and gas production and solar cell production. For each materials group, examples of typical applications from various industry sectors are presented while taking into account the property fingerprint.

Effect of the Si-C Powder Prepared by Mechanical Alloying on the Densification of Silicon Carbide Powder

  • Yoon, Bola;Lee, Sea-Hoon;Lee, Heesoo;Hwang, Geumchan;Kim, Byungsook
    • 한국세라믹학회지
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    • 제53권1호
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    • pp.99-104
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    • 2016
  • High purity Si-C (99.999%) powder prepared by mechanical alloying was added to a commercial SiC powder as a sintering additive. Reaction bonded silicon carbide balls and jars with high purity (99.98%) were used for the mechanical alloying. As a result, the purity of the sintered Si-C was higher than 99.99%. When sintered at $2200^{\circ}C$ under 50 MPa pressure for 1 h, SiC containing 10 wt% of high purity Si-C showed a relative density of 95.3%, similar to the relative density of commercial SiC (95%). However, the relative density of SiC decreased to 90.6% without the additive when the applied pressure decreased to 40 MPa. In contrast, the relative density was nearly unaffected by the decrease of the pressure when using the Si-C additive. Therefore, the addition of Si-C powder promoted the densification of SiC above $2000^{\circ}C$ under 40 MPa pressure.

거대기공 다공질 탄화규소 세라믹스의 꺾임강도 (Flexural Strength of Macroporous Silicon Carbide Ceramics)

  • 임광영;김영욱;송인혁;배지수
    • 한국세라믹학회지
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    • 제48권5호
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    • pp.360-367
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    • 2011
  • Macroporous silicon carbide (SiC) ceramics were fabricated by powder processing and polymer processing using carbon-filled polysiloxane as a precursor. The effects of the starting SiC polytype, template type, and template content on porosity and flexural strength of macroporous SiC ceramics were investigated. The ${\beta}$-SiC powder as a starting material or a filler led to higher porosity than ${\alpha}$-SiC powder, owing to the impingement of growing ${\alpha}$-SiC grains, which were transformed from ${\beta}$-SiC during sintering. Typical flexural strength of powder-processed macroporous SiC ceramics fabricated from ${\alpha}$-SiC starting powder and polymer microbeads was 127 MPa at 29% porosity. In contrast, that of polymer-processed macroporous SiC ceramics fabricated from carbon-filled polysiloxane, ${\beta}$-SiC fillers, and hollow microspheres was 116MPa at 29% porosity. The combination of ${\alpha}$-SiC starting powder and a fairly large amount (10 wt%) of $Al_2O_3-Y_2O_3$ additives led to macroporous SiC ceramics with excellent flexural strength.

Chemical Vapor Deposition of Silicon Carbide Thin Films Using the Single Precursor 1,3-Disilabutane

  • Lee, Kyung-Won;Boo, Jin-Hyo;Yu, Kyu-Sang;Kim, Yunsoo
    • The Korean Journal of Ceramics
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    • 제3권3호
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    • pp.177-181
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    • 1997
  • Epitaxial films of cubic silicon carbide (3C-SiC, $\beta$-SiC) have been grown on Si(001) and Si(111) substrates by high vacuum chemical vapor deposition using the single precursor 1,3-disilabutane, $H_3SiCH_2SiH_2CH_3$, at temperatures 900~$100^{\circ}C$. The advantage of using the single precursor over the covnentional chemical vapor deposition is evident in that the source chemical is safe to handle, carbonization of the substrates is not necessary, accurate stoichiometry of the silicon carbide films is easily achieved, and the deposition temperature is much lowered. The films were characterized by XPS, XRD, SEM, RHEED, RBS, AES, and TED.

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