• Journal of the Semiconductor & Display Technology
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• v.2 no.1
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• pp.21-24
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• 2003

Sludged silicon powders that are generated during silicon ingot slicing process have potential usage as silicon source in fabricating silicon carbide powders by adding carbon. A thermodynamic calculation is performed to consider a plausible formation condition for the silicon carbide powders. A thin silicon oxide layer around silicon powder is sufficient to supply equilibrium oxygen partial pressure at the formation temperature($1400^{\circ}C$) of the silicon carbide in the Si-C-O ternary system. Formation of silicon carbide by using the sludged silicon powders is more efficient than by using silicon oxide powders.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.67-71
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• 2003

Sawing silicon ingot with abrasive slurry generates sludge that includes abrasive powders, cutting oil, and silicon powders. The abrasive powders and cutting oil are being separated and reused. Mixing the remained stodged silicon powders with carbon powders and subsequent heat-treatment are conducted to produce silicon carbide. The size of SiC whiskers and powders was smaller than the conventionally grown silicon carbide whiskers that were synthesized by adding micron-size metal impurities. Impurity related mechanism is attributed to the formation of the silicon carbide whiskers, as metal impurities are contained in the stodged silicon powders.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.486-492
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• 1998

Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${\beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{\circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.229-234
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• 1997

Silicon carbide-carbon fiber composites have been prepared by partially Infiltrating porous carbon fiber composites with liquid silicon at a reaction temperature of $1670^{\circ}C$. Reaction between molten silicon and the fiber preform yielded silicon carbide-carbon fiber composites composed of aggregates of loosely bonded SiC crystallites of about 10$\mu\textrm{m}$ in size and preserved the appearance of a fiber. In addition, the SiC/C fiber composites had carbon fibers coated with a dense layer consisted of SiC particles of sizes smaller than 1$\mu\textrm{m}$. The physical and mechanical properties of SiC/C fiber composites were discussed in terms of infiltrated pore volume fraction of carbon preform occupied by liquid silicon at the beginning of reaction. Lower bending strength of the SiC/C fiber composites which had a heterogeneous structure in nature, was attributed to the disruption of geometric configuration of the original carbon fiber preform and the formation of the fibrous aggregates of the loosely bonded coarse SiC particles produced by solution-precipitation mechanism.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1091-1092
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• 2006

Silicon nitride - silicon carbide composite was developed by using an abrasive SiC powders as a raw material. The composites were prepared by mixing abrasive SiC powder with silicon, pressing and sintering at $1400^{\circ}C$ under nitrogen atmosphere in atmosphere controlled vacuum furnace. The proportion of silicon in the initial mixtures varied from 20 to 50 wt%. After sintering, crystalline phases and microstructure were characterized. All composites consisted of ${\alpha}-Si_3N_4$ and ${\beta}-Si_3N_4$ as the bonding phases in SiC matrix. Their physical and mechanical properties were also determined. It was found that the density of the obtained composites increased with an increase in the $Si_3N_4$ content formed in the reaction.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.376-380
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• 2000

Carbon nanofibers with an average diameter of 100nm were reacted with SiO vapor generated from a mixture of Si and SiO2 to produce silicon carbide nanofibers at temperature ranging 1200∼1500$^{\circ}C$ under vacuum. The nanofiber reacted at 1200$^{\circ}C$ for two hours consisted of silicon carbide with an average crystallite size of 10-20nm, amorphous silica and a significant amount of unreacted carbon. The surface area of silicon carbide nanofiber, obtained after removal of amorphous silica and unreacted carbon from converted carbon nanofibers at 1200$^{\circ}C$, was as high as 150㎡/g. With increasing reaction temperature to 1500$^{\circ}C$, the surface area was decreased to 14㎡/g. Growth of SiC crystallite size with increasing conversion temperature of carbon nanofiber was confirmed from Scherrer formula using the (111) diffraction line and TEM images of converted carbon nanofibers.

• Textile Coloration and Finishing
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• v.33 no.4
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• pp.309-316
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• 2021

Due to the rigid nature of the silicon carbide fiber(SiC), fiber damage occurs from the friction during the carding process. This damage not only lowers the spun yarn yield, but also lowers the heat resistance of the spun yarn, so that ultra-high heat resistant yarn cannot be manufactured. Therefore, in the carding process where the most friction between fiber and machine(wire, etc.) occurs, some factors were modified and tested, and as a result of measuring the change in physical properties, fiber damage decreased due to the wire angle or wire density, resulting in improved yield. The test method used to measure the yield of SiC fiber was the carbonization method, and the content of SiC fibers was calculated using the remaining amount after carbonization. Carbonization test was performed at air condition, 700℃, and for 2 hours. Analysis by SEM-EDX showed that the carbide was consistent with the composition of the SiC fiber.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.123-124
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• 2007

3성분계 Ti-Si-C 코팅은 PECVD 기술에 의해 WC-Co 기판에 합성되었다. 이 연구에서 Ti-Si-C코팅에서의 비정질 silicon carbide 상의 효과는 XRD, XPS, TEM에 의해 분석되었다. TiC 결정의 입자크기는 비정질 silicon carbide의 침투 현상 때문에 Si의 함유량이 증가됨에 따라 감소된다. Ti-Si-C 코팅은 5.2%의 Si함유량에서 나노크기의 nc-TiC결정과 비정질 a-SiC로 이루어져 있고 최고 경도 33GPa와 탄성율 330GPa를 각각 보여주고 있다. 이 수치들은 순수한 TiC(-21GPa, 260Gpa)보다 눈에 띄게 높아졌다.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.7
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• pp.117-122
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• 2010

Recently, aspheric glass lens molding core is fabricated with tungsten carbide(WC). If molding core is fabricated with silicon carbide(SiC), SiC coating process, which must be carried out before the Diamond-Like Carbon(DLC) coating can be eliminated and thus, manufacturing time and cost can be reduced. Diamond Like Carbon(DLC) is being researched in various fields because of its high hardness, high elasticity, high durability, and chemical stability and is used extensively in several industrial fields. Especially, the DLC coating of the molding core surface used in the fabrication of a glass lens is an important technical field, which affects the improvement of the demolding performance between the lens and molding core during the molding process and the molding core lifetime. Because SiC is a material of high hardness and high brittleness, it can crack or chip during grinding. It is, however, widely used in many fields because of its superior mechanical properties. In this paper, the grinding condition for silicon carbide(SiC) was developed under the grinding condition of tungsten carbide. A silicon carbide molding core was fabricated under this grinding condition. The measurement results of the SiC molding core were as follows: PV of 0.155 ${\mu}m$(apheric surface) and 0.094 ${\mu}m$(plane surface), Ra of 5.3 nm(aspheric surface) and 5.5 nm(plane surface).

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.276-281
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• 2000

Silicon carbide(SiC) films were grown on modified Si(111) surface with a SiNx in the NH$_3$surrounding. Thickness of SiC films was decreased with increasing of the nitridation time. Also, voids having crystal defects were removed at interface of SiC/Si according to growth parameters. SiC films were grown on SiNx/Si substrate of 100, 300 and 500nm thickness. SiC films were deposited along [111] direction and columnar grains of SiC crystal. The void-free film was observed in the interface of SiC/SiNx. This result suggests that fabrication of SiC devices are applied to SiNx replacing silicon oxide in SOI structure.