• Applied Microscopy
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• 제8권1호
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• pp.77-79
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• 1978

Al-Si junctions were made by vacuum deposition of aluminium on to silicon wafers and examined by TEM. The uneven interfaces of the junctions are formed due to the surface tension of the molten solution resulting in preferential dissolution of silicon in aluminium at some areas. These undesirable uneven interfaces affect the junction shape and so the over-all characteristics of the devices.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.1545-1546
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• 2013

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.1523-1524
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• 2013

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.243-247
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• 2012

The paper focuses on an anti-reflection (AR) coating deposited by PECVD in silicon solar cell fabrication. AR coating is effective to reduce the reflection of the light on the silicon wafer surface and then increase substantially the solar cell conversion efficiency. In this work, we carried out experiments to optimize double AR coating layer with silicon nitride and silicon oxide for the silicon solar cells. The p-type mono crystalline silicon wafers with $156{\times}156mm^2$ area, 0.5-3 ${\Omega}{\cdot}cm$ resistivity, and $200{\mu}m$ thickness were used. All wafers were textured in KOH solution, doped with $POCl_3$ and removed PSG before ARC process. The optimized thickness of each ARC layer was calculated by theoretical equation. For the double layer of AR coating, silicon nitride layer was deposited first using $SiH_4$ and $NH_3$, and then silicon oxide using $SiH_4$ and $N_2O$. As a result, reflectance of $SiO_2/SiN_x$ layer was lower than single $SiN_x$ and then it resulted in increase of short-circuit current and conversion efficiency. It indicates that the double AR coating layer is necessary to obtain the high efficiency solar cell with PECVD already used in commercial line.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.280-284
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• 2004

Multicrystalline silicon wafers were textured in an alkaline bath, basically using sodium hydroxide and in acidic bath, using mainly hydrofluoric acid (HF), nitric acid $(HNO_3)$ and de-ionized water (DIW). Some wafers were also acid polished for the comparative study. Comparison of average reflectance of the samples treated with the new recipe of acidic solution showed average diffuse reflectance less than even 5 percent in the optimized condition. Solar cells were thus fabricated with the samples following the main steps such as phosphorus doping for emitter layer formation, silicon nitride deposition for anti-reflection coating by plasma enhanced chemical vapor deposition (PECVD) and front surface passivation, screen printing metallization, co-firing in rapid thermal processing (RTP) Furnace and laser edge isolation and confirmed >14 % conversion efficiency from the best textured samples. This isotropic texturing approach can be instrumental to achieve high efficiency in mass production using relatively low cost silicon wafers as starting material.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.140-143
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• 2013

Lowering surface reflectance of silicon wafer by texturization is one of the most important processes to improve the efficiency of silicon solar cells. Generally, the texturing of crystalline silicon was carried out using alkaline solution. The average reflectance of this method was 11% at the wavelength between 400 and 1,000 nm. In this study, the wafers were first texturing by NaOH solution at $80^{\circ}C$ for 35 min. Then the wafers were texturing by $SF_6$ and $O_2$ plasma in RIE (Reactive Ion Etching). The average reflectance of two step texturing was reduced to below 5% at the wavelength between 400 and 1,000 nm.

• 한국산학기술학회논문지
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• 제15권3호
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• pp.1707-1710
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• 2014

본 논문은 실리콘 원료의 용융과 방향성 응고에 의해 결정성이 양호한 방향성 응고에 대한 연구이다. 방사화 분석 결과 총 10가지 금속 불순물이 검출 되었지만, 농도 분포는 같은 위치에서 위와 아래의 차이는 크게 나지 않고, 어떤 특정한 위치에서 한쪽으로 집중되거나 어떤 경향성 없이 전체의 샘플의 모든 부분에서 농도가 거의 일정하게 분포를 나타냈다. 열 해석 시뮬레이션에 의한 결과, 용융은 유지 시간이 80분일 때 실리콘이 전체적으로 고르게 용융 온도에 도달하였고 냉각은 상부 냉각 온도가 $1,400^{\circ}C$와 60분 냉각 시 가장 좋은 결과 값을 나타내었다. 제작된 웨이퍼가 기존의 상용 웨이퍼보다 결정립계에서의 에칭이 훨씬 적게 이루어졌다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.16-17
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• 2007

To improve efficiency of solar cells, it is important to make a light trapping structure to reduce surface reflectance for increasing absorption of sun light within the solar cells. One of the promising methods that can reduce surface reflectance is isotropic texturing with acid solution based on hydrofluoric acid(HF), nitric acid($HNO_3$), and organic additives. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its different grain orientation. Isotropic texturing with acid solution can uniformly etch multicrystalline silicon wafers unrelated with grain orientation, so we can get low surface reflectance. In this paper, the acid texturing solution is made up of only HF and $HNO_3$ for easy controling the concentration and low cost compared to acid solution with organic additives. $HNO_3$ concentration and dipping time were varied to find the condition of minimum surface reflectance. Textured surfaces were observed Scanning Electron Microscope(SEM) and surface reflectance were measured. The best result of arithmetic mean(wavelength from 400nm to 1000nm) reflectance with acid texturing is 4.64% less than alkali texturing.

• 센서학회지
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• 제9권1호
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• pp.70-75
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• 2000

단결정 실리콘웨이퍼를 사용한 태양전지 제조에 있어 가장 큰 문제점은 재료의 높은 가격이다. 본 연구에서는 이러한 문제의 해결방안으로 현재 DRAM 소자 제조과정에서 폐기되는 웨이퍼를 리사이클링하여 태양전지를 제작하고 저가의 제조공정과 전지의 특성을 연구하였다. DRAM용 실리콘 웨이퍼는 비저항이 높고 두꺼워 태양전지 재료로서 부적합하나, 본 연구에서는 후면전계 (Back Surface Field) 형성, 표면 Texturing, 반사 방지막 형성 등의 공정들을 조합하여 효율향상을 위한 최적조건을 찾아내고, 두께변화에 따른 효율변화를 조사하였다. 최적화된 위의 모든 조건들을 적용하였을 때, $4\;cm^2$의 면적, $300\;{\mu}m$ 두께를 가지는 태양전지에서 단락전류밀도 ($J_{sc}$)는 $28\;mA/cm^2$, 개방전압 ($V_{oc}$) 0.51V, 충실도(Fill Factor)면에서는 0.53으로 가장 높은 값을 얻었고, 10% 이상의 효율을 확보할 수 있었다. 이와 같은 방법으로 폐기되는 실리콘 웨이퍼들을 재활용하여 실용성이 큰 저가의 단결정 실리콘 태양전지를 제작할 수 있는 방법을 확보할 수 있었다.

• 통합자연과학논문집
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• 제2권1호
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• pp.37-40
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• 2009

Synthesis and characterization of alkyl-capped nanocrystalline silicon (R-n-Si) have been achieved from the reaction of silicontetrachloride with magnesiumsilicide. Surface of silicon nanocrystal has been derivatized with various alkyl groups (R=methyl, n-butyl, etc.). Silicon nanoparticles have been also obtained by the sonication of luminescent porous silicon. Former exhibits an emission band at 360 nm, but latter exhibits an emission band at 680 nm. In this study very sensitive detection of TNT (2,4,6-trinitrotoluene), DNT (2,4-dinitrotoluene), NB (nitrobenzene), and PA (picric acid) has been achieved in gas phase with porous silicon using photoluminescence quenching of the silicon crystallites as a transduction mode. Porous silicon are electrochemically etched from crystalline silicon wafers in an aqueous solution of hydrofluoric acid. We have characterized these silicon nanoparticles by Luminescence Spectrometer (LS 55).