• 한국기계가공학회지
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• 제15권3호
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• pp.66-71
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• 2016

Reducing the wafer breakage rate and sawing thinner wafers will decrease the cost of solar cells. This study was carried out in order to identify ways to achieve this goal. In this study, the cutting force characteristics using an ingot tilting-type diamond multi wire-sawing machine were analyzed. The cutting force was analyzed while varying the tilting angles and wire speed. The obtained data were analyzed by classifying the tangential cutting force and the normal cutting force. In this cutting force experiment, the difference between the forces was confirmed; it was found that it rises with increasing the tilting angles and decreases when the wire speed elevates. The resulting value can be utilized as basic data for the determination of an ideal cutting recipe.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.103.1-103.1
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• 2011

실리콘 이종접합 태양전지에서 계면 결함 밀도는 효율을 결정하는데 가장 중요한 요인으로 작용한다. 계면 결함은 캐리어의 재결합 위치로 작용하여, 계면 결함 밀도가 증가하면 재결합 속도가 증가하게 된다. 흡수층으로 사용되는 실리콘 웨이퍼 (결정질 실리콘)를 가능한 깨끗하게 세정함으로써, 또한 emitter로 쓰이는 비정질 실리콘을 낮은 데미지로 증착하여 계면 결함 밀도를 감소 시킬 수 있다. 이러한 계면 결함 밀도의 감소가 어떠한 변화로 인해 태양전지 특성에 영향을 주는지 시물레이션을 통해 알아보았다. n-type 웨이퍼에 p-type 비정질 실리콘을 emitter로 하여 TCO/p/i/n-type wafer/i/n/TCO/metal의 구조를 적용했고, wafer 전면과 i로 쓰인 무첨가된 비정질 실리콘 간의 계면 결함 밀도를 변수로 적용했다. 그 결과, 계면 결함 밀도가 감소함에 따라 재결합이 감소하여 태양전지 특성이 증가하는 측면도 있지만, 흡수층의 장벽 (barrier height)이 높아져 재결합을 더욱 감소시킴으로 인해 태양전지 특성이 증가함을 알 수 있었다.

• Nuclear Engineering and Technology
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• 제7권2호
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• pp.95-106
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• 1975

3개 태양전지 견본의 전류 전압특성과 효율에 관한 비교 연구를 수행하였다. 견본 하나는 우리 연구실에서 만든 이온주입식의 것이며, 나머지 두개는 외국의 한 메이커가 만든 열확산식의 것이다. 실험에 의하던 각 견본의 접합형성의 특성과 그 효율은 각 p-n 접합의 전류 전압 특성에 크게 의존된다는 것을 알 수 있었다. 이온 주입식 견븐의 불완전한 특성의 원인은 약간 부족한 불순물의 표면농도, 이온 충격과 잡불순물에 의한 격자 결함, 전극에 있어서의 불충분한 Ohm 접촉등의 원인에 기인된다는 것을 본 비교 연구를 통해서 명백히 알 수 있었다. 변환효율에 있어서는 열화산으로 된 두 견본의 것은 각각 14.3%와 9.3%인데 비해서 이온주입으로 된 견본의 것은 4.2%였다.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.27-33
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• 2014

To develop high efficiency crystalline solar cells, the $SiN_x$ film for surface passivation and anti-reflection coating is very important and it is generally deposited by PECVD. In this paper, the $SiN_x$ film deposited by Hot-Wire chemical vapor deposition(HWCVD) that has no plasma damage was studied. First, to optimize the $SiN_x$ film deposition process, $SiH_4$ gas rate and substrate temperature were varied and then refractive index and thickness were measured. When $SiH_4$ gas rate was 22sccm and substrate temperature was $100^{\circ}C$, refractive index was 1.94 and higher than that of other process conditions. Second, the lifetime was measured by varying the annealing temperature and time. The annealing process was made from 5 to 30 minutes at $300{\sim}500^{\circ}C$. When the annealing temperature was $100^{\circ}C$ and time was 10minute, the lifetime was the highest. The lifetime of annealed samples was also measured after the firing process at $975^{\circ}C$. Although the lifetime of all samples was decreased by firing process, the lifetime of annealed samples before the firing process was higher than that of fired samples only. Finally, the characteristics of solar cells with HWCVD $SiN_x$ film were measured.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1277-1279
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• 1994

In the structure of ZnO/nip-SiC: H/metal substrate amorphous silicon (a-Si:H) solar cells, the effects of inserting a rear textured ZnO in the p-SiC:H/metal interface and a graded bandgap buffer layer in the i/p-SiC:H have been analysed by computer simulation. The incident light was taken to have an intensity of $100mW/cm^2$(AM-1). The thickness of the a-Si:H n, ${\delta}$-doped a-SiC:H p, and buffer layers was assumed to be $200{\AA},\;66{\AA}$, and $80{\AA}$, respectively. The scattering coefficients of the front and back ZnO were taken to be 0.2 and 0.7, respectively. Inserting the rear buffer layer significantly increases the open circuit voltage($V_{oc}$) due to reduction of the i/p interface recombination rate. The use of textured ZnO markedly improves collection efficiency in the long wavelengths( above ${\sim}550nm$ ) by back scattering and light confinement effects, resulting in dramatic enhancement of the short circuit current density($J_{sc}$). By using the rear buffer and textured ZnO, the i-layer thickness of the ceil for obtaining the maximum efficiency becomes thinner(${\sim}2500{\AA}$). From these results, it is concluded that the use of textured ZnO and buffer layer at the backside of the ceil is very effective for enhancing the conversion efficiency and reducing the degradation of a-Si:H pin-type solar cells.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.91.1-91.1
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• 2010

There are some methods for increasing efficiency of crystalline silicon solar cells. Among them, It is important to reduce the recombination loss of surface for high efficiency. In order to reduce recombination loss is a way to use the BSF(Back Surface Field). The BSF on the back of the p-type wafer forms a p+layer. so, it is prevented to act electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. therefore, open-circuit-voltage and Fill factor(FF) of solar cells are increased. This paper investigates the formation of rear contact process comparing Aluminum-paste(Al-paste) with Aluminum-Metal(99.9%). It is shown that the Aluminum-Metal provides high conductivity and low contact resistance of $21.35m{\Omega}cm$ using the Vacuum evaporation process but, it is difficult to apply the standard industrial process because high Vacuum is needed and it costs a tremendous amount more than Al-paste. On the other hand, using the Al-paste process by screen printing is simple for formation of metal contact and it is possible to produce the standard industrial process. however, it is lower than Aluminum-Metal(99.9) of conductivity because of including mass glass frit. In this study, contact resistances were measured by 4-point prove. each of contact resistances is $21.35m{\Omega}cm$ of Aluminum-Metal and $0.69m{\Omega}cm$ of Al-paste. and then rear contact have been analyzed by Scanning Electron Microscopy(SEM).

• Current Photovoltaic Research
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• 제8권1호
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• pp.6-11
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• 2020

The power conversion efficiency (PCE) of a two-terminal tandem solar cell depends upon the tunnel-recombination junction (TRJ) between the top and bottom sub-cells. An optimized TRJ in a tandem cell helps improve its open-circuit voltage (V_oc), short-circuit current density (J_sc), fill factor (FF), and efficiency (PCE). One of the parameters that affect the TRJ is the buffer layer thickness. Therefore, we investigated various TRJs by varying the thickness of the buffer or intermediate layer (TRJ-buffer) in between the highly doped p-type and n-type layers of the TRJ. The TRJ-buffer layer was p-type nc-Si:H, with a doping of 0.06%, an activation energy (E_a) of 43 meV, an optical gap (E_g) of 2.04 eV, and its thickness was varied from 0 nm to 125 nm. The tandem solar cells we investigated were a combination of a heterojunction with intrinsic thin layer (HIT) bottom sub-cell and an a-Si:H (amorphous silicon) top sub-cell. The initial cell efficiency without the TRJ buffer was 7.65% while with an optimized buffer layer, its efficiency improved to 11.74%, i.e., an improvement in efficiency by a factor of 1.53.

• Current Photovoltaic Research
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• 제9권1호
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• pp.1-5
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• 2021

The properties of the electron transport layer (ETL) have a great effect on perovskite solar cell performance. Depositing conformal SnO2 ETL on bottom textured silicon cells is essential to increase current density in terms of the silicon-perovskite tandem solar cells. In the recent study, the SnO2 electron transport layer deposited by the sputtering method showed an efficiency of 19.8%. Also, an electron transport layer with a sputtered TiO2 electron transport layer in a 4-terminal tandem solar cell has been reported. In this study, we synthesized SnOx ETL with a various sputtering power range of 30-60W by Radio-frequency (RF)-magnetron sputtering. The properties of SnOx thin film were characterized using ellipsometer, UV-vis spectrometer, and IV measurement. With a sputtering power of 50W, the solar cell showed the highest efficiency of 13.3%, because of the highest fill factor by the conductivity of SnOx film.

• 한국결정성장학회지
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• 제22권2호
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• pp.65-72
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• 2012

본 연구에서는 비정질 실리콘의 알루미늄 유도 결정화(AIC)가 시도되었다. 결정질 실리콘의 좀 더 큰 입자를 얻기 위해, 선택적인 핵생성(Selective nucleation) 시도는 비정질 실리콘 밑의 실리카($SiO_2$) 층의 습식 파우더 분사 처리와 함께 진행됐다. 또한 니켈 층은 실리콘 원자가 알루미늄 층으로 이동하는 것을 방지하기 위한 확산 방지막(Diffusion barrier)으로 선택되었다. $520^{\circ}C$에서 열처리를 한 후에 XRD 분석을 통해 Si(111) 방향으로 결정화된 결정질 실리콘을 확인했고 니켈은 실리콘과 알루미늄 사이의 확산 방지막으로 매우 효과적인 재료라는 것을 입증하였다. 이 연구는 고성능의 태양전지에 적용하는 결정질 실리콘 막의 좀 더 큰 입자를 얻기 위한 방법 중의 하나라고 기대된다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.94-97
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• 2005

For the fabrication of poly-crystalline silicon ingot, CCCC (Cold Crucible Continuous Casting) method under a high frequency alternating magnetic field, was utilized in order to prevent crucible consumption and ingot contamination and to increase production rate. In order to effectively and continuously melt and cast silicon, which has a high radiation heat loss due to the high melting temperature and a low induction heating efficiency due to a low electric conductivity, Joule and pinch effects were optimized. Throughout the present investigation, poly-crystalline Si ingot was successfully produced at the casting speed of above 1.5 mm/min under a non-contact condition.