• 제목/요약/키워드: Silicon Pressure Sensor

검색결과 117건 처리시간 0.027초

절연층으로 폴리이미드와 실리콘 산화막을 사용한 박막 압력 센서의 특성 비교 (Comparison of the Performance of Thin Film Pressure Sensors with Polyimid and Silicon Oxide as a Insulating Layer)

  • 민남기;이성래;전재형;김정완
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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    • pp.296-298
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    • 1997
  • The performance of thin film pressure sensors with polyimide and silicon oxide as a insulating layer between the stainless steel diaphragm and the Cu-Ni strain gauges is presented. The polyimide was spun on the stainless steel diaphragm and cured in an oven. The silicon oxide was deposited by rf sputtering. The thin film pressure sensor with silicon oxide as a insulating layer showed a better nonlinearity and a lower hysteresis.

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스테인레스 봉입형 반도체 압력센서의 제작 및 그 특성 (Construction and Characterization of the Stainless Steel Isolated Type Semiconductor Pressure Sensor)

  • 김우정;조용수;황정훈;최시영
    • 센서학회지
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    • 제11권3호
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    • pp.138-144
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    • 2002
  • 스테인레스 봉입형 압력센서를 제작하기 위하여 먼저 반도체 제조 및 식각 공정을 통하여 반도체 압력센서를 제작하였다 그리고 이를 glass molding된 스테인레스 housing에 올려놓고 $50\;{\mu}m$ 두께의 스테인레스 박판을 용접한 후 실리콘 오일을 채워 넣고 봉입하여 압력 범위 10 bar 센서를 완성하였다. 이와 같이 제작한 센서와 XTR105 발신기 전용 회로를 결합하여 $4{\sim}20\;mA$ 출력의 압력 발신기를 제작하고 그 특성을 조사하였다. 온도 보상 전 정확도는 ${\pm}5%$ FS이었으나 보상 후 정확도 ${\pm}1%$ FS로 개선되었다.

RIE 공정 조건에 의한 피라미드 구조의 블랙 실리콘 형성 (Black Silicon of Pyramid Structure Formation According to the RIE Process Condition)

  • 조준환;공대영;조찬섭;김봉환;배영호;이종현
    • 센서학회지
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    • 제20권3호
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    • pp.207-212
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    • 2011
  • In this study, pyramid structured black silicon process was developed in order to overcome disadvantages of using wet etching to texture the surface of single crystalline silicon and using grass/needle-like black silicon structure. In order to form the pyramidal black silicon structure on the silicon surface, the RIE system was modified to equip with metal-mesh on the top of head shower. The process conditions were : $SF_6/O_2$ gas flow 15/15 sccm, RF power of 200 W, pressure at 50 mTorr ~ 200 mTorr, and temperature at $5^{\circ}C$. The pressure did not affect the pyramid structure significantly. Increasing processing time increased the size of the pyramid, however, the size remained constant at 1 ${\mu}M$ ~ 2 ${\mu}M$ between 15 minutes ~ 20 minutes of processing. Pyramid structure of 1 ${\mu}M$ in size showed to have the lowest reflectivity of 7 % ~ 10 %. Also, the pyramid structure black silicon is more appropriate than the grass/needle-like black silicon when creating solar cells.

저압에서의 선형성을 향상시키기 위한 압력센서의 설계 (A Design of Pressure Sensor for Improving Linearity at Low Pressure Range)

  • 이보나;이문기
    • 센서학회지
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    • 제5권2호
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    • pp.1-8
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    • 1996
  • 본 논문에서는 감도를 향상시키고 저압력 범위에서 다이어프램의 휨을 감소시킴으로서 선형성이 향상되도록 한 센터 보스(center boss) 다이어프램 구조를 갖는 압력센서를 설계 하였다. 설계한 센터보스형 압력센서의 최대 휨은 $0.125{\mu}m$, 최대 응력은 $2.24{\times}10^{7}\;Pa$, 최대 스트레인은 $132\;{\mu}strain$, 감도는 27.67 mV/V.psi로서 휨은 다이어프램 두께의 약 1/160, 정사각형 구조일때의 1/35로 감소하였고 감도는 정사각형 구조일때보다 19배정도 증가하였다.

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수송기계 엔진용 3C-SiC 마이크로 압력센서의 제작

  • 한기봉;정귀상
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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    • pp.10-13
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    • 2006
  • This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-Sic/SOI pressure sensor presents a high-sensitivity and excel lent temperature stability.

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Demonstration of Alternative Fabrication Techniques for Robust MEMS Device

  • Chang, Sung-Pil;Park, Je-Young;Cha, Doo-Yeol;Lee, Heung-Shik
    • Transactions on Electrical and Electronic Materials
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    • 제7권4호
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    • pp.184-188
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    • 2006
  • This work describes efforts in the fabrication and testing of robust microelectromechanical systems (MEMS). Robustness is typically achieved by investigating non-silicon substrates and materials for MEMS fabrication. Some of the traditional MEMS fabrication techniques are applicable to robust MEMS, while other techniques are drawn from other technology areas, such as electronic packaging. The fabrication technologies appropriate for robust MEMS are illustrated through laminated polymer membrane based pressure sensor arrays. Each array uses a stainless steel substrate, a laminated polymer film as a suspended movable plate, and a fixed, surface micromachined back electrode of electroplated nickel. Over an applied pressure range from 0 to 34 kPa, the net capacitance change was approximately 0.14 pF. An important attribute of this design is that only the steel substrate and the pressure sensor inlet is exposed to the flow; i.e., the sensor is self-packaged.

Surface Micromachined Pressure Sensor with Internal Substrate Vacuum Cavity

  • Je, Chang Han;Choi, Chang Auck;Lee, Sung Q;Yang, Woo Seok
    • ETRI Journal
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    • 제38권4호
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    • pp.685-694
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    • 2016
  • A surface micromachined piezoresistive pressure sensor with a novel internal substrate vacuum cavity was developed. The proposed internal substrate vacuum cavity is formed by selectively etching the silicon substrate under the sensing diaphragm. For the proposed cavity, a new fabrication process including a cavity side-wall formation, dry isotropic cavity etching, and cavity vacuum sealing was developed that is fully CMOS-compatible, low in cost, and reliable. The sensitivity of the fabricated pressure sensors is 2.80 mV/V/bar and 3.46 mV/V/bar for a rectangular and circular diaphragm, respectively, and the linearity is 0.39% and 0.16% for these two diaphragms. The temperature coefficient of the resistances of the polysilicon piezoresistor is 0.003% to 0.005% per degree of Celsius according to the sensor design. The temperature coefficient of the offset voltage at 1 atm is 0.0019 mV and 0.0051 mV per degree of Celsius for a rectangular and circular diaphragm, respectively. The measurement results demonstrate the feasibility of the proposed pressure sensor as a highly sensitive circuit-integrated pressure sensor.

Flexible tactile sensor array for foot pressure mapping system in a biped robot

  • Chuang, Cheng-Hsin;Liou, Yi-Rong;Shieh, Ming-Yuan
    • Smart Structures and Systems
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    • 제9권6호
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    • pp.535-547
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    • 2012
  • Controlling the balance of motion in a context involving a biped robot navigating a rugged surface or a step is a difficult task. In the present study, a $3{\times}5$ flexible piezoelectric tactile sensor array is developed to provide a foot pressure map and zero moment point for a biped robot. We introduce an innovative concept involving structural electrodes on a piezoelectric film in order to improve the sensitivity. The tactile sensor consists of a polymer piezoelectric film, PVDF, between two patterned flexible print circuit substrates (FPC). Additionally, a silicon rubber bump-like structure is attached to the FPC and covered by a polydimethylsiloxane (PDMS) layer. Experimental results show that the output signal of the sensor exhibits a linear behavior within 0.2 N ~ 9 N, while its sensitivity is approximately 42 mV/N. According to the characteristic of the tactile sensor, the readout module is designed for an in-situ display of the pressure magnitudes and distribution within $3{\times}5$ taxels. Furthermore, the trajectory of the zero moment point (ZMP) can also be calculated by this program. Consequently, our tactile sensor module can provide the pressure map and ZMP information to the in-situ feedback to control the balance of moment for a biped robot.

실리콘 직접 접합 / 전기화학적 식각정지를 이용한 실리콘 다이아프램의 형성과 실리콘 압력센서 제조에의 응용 (Formation of Silicon Diaphragm Using Silicon-wafer Direct Bonding / Electrochemical Etch-stopping and Its Application to Silicon Pressure Sensor Fabrication)

  • 주병권;하병주;김근섭;송만호;김성환;김철주;차균현;오명환
    • 센서학회지
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    • 제3권3호
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    • pp.45-53
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    • 1994
  • 실리콘의 직접 접합 방법과 2단계 전기화학적 식 정지 방법을 이용하여 새로운 구조의 실리콘 다이아프램을 제조하였다. 이러한 다이아프램 구조를 기계량 센서에 이용하면 공동의 깊이와 다이아프램의 두께를 보다 정교하게 조절할 수 있다. 또한, 접합 계면에서 발생하는 응력이 다이아프램의 표면으로 전달되는 것을 피할 수 있다. 최종적으로, 제조된 다이아프램을 이용하여 암저항형 실리콘 압력 센서를 제작하였고 압력 단위의 표시가 가능한 디지탈 압력 측정기를 구현하였다.

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압저항형 압력센서의 통합해석 및 검증 (Synthesized analysis and its verification of the piezoresistive pressure sensor)

  • 이승환;이곤재;한승오
    • 전기학회논문지
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    • 제58권3호
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    • pp.573-577
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    • 2009
  • Piezoresistive pressure sensor have become the successfully-commercialized MEMS product and the related technologies have been well developed over the past decades. Regarding the design methodology, however, the coupled-physics FEM analyses of the transducer itself and the signal-processing circuitry design based on the conventional EDA are separated and both of the analyses were sequentially processed for the full design of the pressure sensor. For the fast and effective R&D, new design methodology is proposed in this paper where the FEM results are linked to the EDA environment and therefore most of the design works can be done in the EDA environments, which means the time-consuming FEM analyses can be minimized. In order to verify the proposed approach, a typical piezoresistive pressure sensor having the silicon diaphragm and piezoresistors was modeled and analyzed based on the proposed methodology. The verification results showed that the simulated results were matched well with the measured data within the 7% difference while the simulation time was reduced less than 5% compared to the conventional methodology. Through the proposed approach, various types of the piezoresistive pressure sensors can be developed in more effective way.