• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.126-131
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• 2007

In this paper, we fabricated piezoresistive pressure sensor with dry etching technology which used ICP-RIE (inductively coupled plasma reactive ion etching) and etching delay technology which used SOI (silicon-on-insulator). Structure of the fabricated pressure sensor shows a square diaphragm connected to a frame which was vertically fabricated by dry etching process and a single-element four-terminal gauge arranged at diaphragm edge. Sensitivity of the fabricated sensor was about 3.5 mV/V kPa at 1 kPa full-scale. Measurable resolution of the sensor was not exceeding 20 Pa. The nonlinearity of the fabricated pressure sensor was less than 0.5 %F.S.O. at 1 kPa full-scale.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.342-344
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• 1995

Using piezoresistive effects of single-crystal and poly-crystalline silicon, pressure sensors of the same pattern were fabricated for comparison of temperature characteristics. Optimum size and aspect ratio of rectangular sensor diaphragm were calculated by FEM. For polsilicon pressure sensor, polysilicon resistors of Wheatstone bridge were deposited by LPCVD to be used in a wide' temperature range. Polysilicon pressure sensors showed more stable temperature characteristics than single-crysta1 silicon in the range of $-20\sim125[^{\circ}C]$. To get low TCO (Temperature Coefficient of Offset), below $\pm$3 [${\mu}V/V/^{\circ}C$], it is needed for each TCR of piezoresistors to have a deviation within $\pm25[ppm/^{\circ}C]$ less than $\pm500[ppm/^{\circ}C]$ of resistors for polysilicon pressure sensor can result in low TCS(Temperature Coefficient of Sensitivity) of -0.1[%FS/$^{\circ}C$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.677-680
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• 1999

Rapid developing automation technology enhances the need of sensors. Among many materials, silicon has the advantages of electrical and mechanical property, Single-crystalline silicon has different piezoresistivity on 야fferent directions and a current leakage at elevated temperature, but poly-crystalline silicon has the possibility of controling resistivity using dopping ions, and operation at high temperature, which is grown on insulating layers. Each wafer has slightly different thicknesses that make difficult to obtain the precisely same thickness of a diaphragm. This paper deals with the fabrication process to make poly-crystalline silicon based pressure sensors which includes diaphragm thickness and wet-etching techniques for each layer. Diaphragms of the same thickness can be fabricated consisting of deposited layers by silicon bulk etching. HF etches silicon nitride, HNO$_3$+HF does poly -crystalline silicon at room temperature very fast. Whereas ethylenediamice based etchant is used to etch silicon at 11$0^{\circ}C$ slowly.

• Journal of Power System Engineering
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• v.5 no.4
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• pp.11-17
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• 2001

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than $200{\sim}300{\mu}m$ has been realized, In this paper, we study some of the bonding processes of SCS(single crystal silicon) insulator wafer for the microaccelerometer. and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in micro structural engineering discipline for design of SCS insulator wafers. Successful temperature distribution analysis and design of the SCS insulator wafers based on the tunneling current concept using microaccelerometer depend on the knowledge about normal mechanical properties of the SCS and $SiO_2$ layer and their control through manufacturing processes.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.11a
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• pp.3-4
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• 2004

A flexible Packaging scheme, which embedded chip packaging, has been developed using a thinned silicon chip. Mechanical characteristics of thinned silicon chips are examined by bending test and finite element analysis. Thinned silicon chips ($t<50{\mu}m$) are fabricated by chemical etching process to avoid possible surface damages on them. These technologies can be use for a real-time monitoring of blood pressure. Our research targets are implantable blood pressure sensor and its telemetric measurement. By winding round the coronary arteries, we can measure the blood pressure by capacitance variation of blood vessel.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.563-570
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• 1990

A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2000.05a
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• pp.105-109
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor the size of the pressure sensor diaphragm have become smaller year by year and a microaccelerometer with a size less than 200-300${\mu}m$ has been realized. In this paper we study some of the micromachining processes of SOI(silicon on insulator)for the microaccelerometer and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for design of SOI wafers. Successful thermal behaviors analysis and design of the SOI wafers based on the tunneling current concept using SOI wafer depend on the knowledge abut normal mechanical properties of the SCS(single crystal silicon)layer and their control through manufacturing process

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.470-474
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• 2023

In this study, a diaphragm-type pressure sensor was developed using multi-layer(four-layer) graphene produced at 1 nm thickness by thermally transferring single-layer graphene produced by chemical vapor deposition (CVD) to a 6" silicon wafer. By measuring the gauge factor, we investigated whether it was possible to produce a pressure sensor of consistent quality. As a result of the measurement, the pressure sensor using multilayer graphene showed linearity and had a gauge factor of about 17.5. The gauge factor of the multilayer graphene-based pressure sensor produced through this study is lower than that of doped silicon, but is more sensitive than a general metal sensor, showing that it can be sufficiently used as a commercialized sensor.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.8
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• pp.683-688
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• 2014

This paper presents a high-performance flexible tactile sensor based on inorganic silicon flexible electronics. We created 100 nm-thick semiconducting silicon ribbons equally distributed with 1 mm spacing and $8{\times}8$ arrays to sense the pressure distribution with high-sensitivity and repeatability. The organic silicon rubber substrate was used as a spring material to achieve both of mechanical flexibility and robustness. A thin copper layer was deposited and patterned on top of the pressure sensing layer to create a flexible temperature sensing layer. The fabricated tactile sensor was tested through a series of experiments. The results showed that the tactile sensor is capable of measuring pressure and temperature simultaneously and independently with high precision.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.3
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• pp.307-314
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• 1988

The thin, square-diaphragm silicon pressure sensor utilizing shear piezoresistance effect was designed and fabricated and its characteristics were examined. The sensor has only one diffused resistor, whereas conventional full-bridge sensor has four. Sensitivity is somewhat lower but temperature compensation is easier than the latter. The proposed sensor was fabricated with only one p-type diffused resistor of the dimension of 113x85\ulcorner\ulcornerlocated near the center of the edge of the diaphragm. The resistor was at 45\ulcornerwith the edge of the diaphragm. The sensitivity of the sensor was 36\ulcorner/V\ulcornermHg and was linear in the pressure range from 0 to 300 mmHg. The temperature coefficient without temperature compensation was 55 ppm/\ulcorner and it was decreased to about 0.17 mmHg/\ulcorner with compensation in the range from 10 to 60\ulcorner.