• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.441-448
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• 2015

Silicon carbide (SiC) coatings for tri-isotropic (TRISO) nuclear fuel particles were fabricated using a chemical vapor deposition (CVD) process onto graphite. A micro-tensile-testing system was developed for the mechanical characterization of SiC coatings at high temperatures. The fracture strength of the SiC coatings was characterized by the developed micro-tensile test in the range of $25^{\circ}C$ to $1000^{\circ}C$. Two types of CVD-SiC films were prepared for the micro-tensile test. SiC-A exhibited a large grain size (0.4 ~ 0.6 m) and the [111] preferred orientation, while SiC-B had a small grain size (0.2 ~ 0.3 mm) and the [220] preferred orientation. Free silicon (Si) was co-deposited onto SiC-B, and stacking faults also existed in the SiC-B structure. The fracture strengths of the CVD-SiC coatings, as measured by the high-temperature micro-tensile test, decreased with the testing temperature. The high-temperature fracture strengths of CVD-SiC coatings were related to the microstructure and defects of the CVD-SiC coatings.

• Journal of Powder Materials
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• v.28 no.1
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• pp.51-58
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• 2021

The conversion of carbon preforms to dense SiC by liquid infiltration is a prospectively low-cost and reliable method of forming SiC-Si composites with complex shapes and high densities. Si powder was coated on top of a 2.0wt.% Y2O3-added carbon preform, and reaction bonded silicon carbide (RBSC) was prepared by infiltrating molten Si at 1,450℃ for 1-8 h. Reactive sintering of the Y2O3-free carbon preform caused Si to be pushed to one side, thereby forming cracking defects. However, when prepared from the Y2O3-added carbon preform, a SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C → SiC reaction at 1,450℃, 3C and 6H SiC phases, crystalline Si, and Y2O3 were generated based on XRD analysis, without the appearance of graphite. The RBSC prepared from the Y2O3-added carbon preform was densified by increasing the density and decreasing the porosity as the holding time increased at 1,450℃. Dense RBSC, which was reaction sintered at 1,450℃ for 4 h from the 2.0wt.% Y2O3-added carbon preform, had an apparent porosity of 0.11% and a relative density of 96.8%.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.43-49
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• 2013

${\beta}$-SiC was deposited onto a graphite substrate by a LPCVD method and the effect of the crystallographic orientation on mechanical properties of the deposited SiC was investigated. The deposition was performed at $1300^{\circ}C$ in a cylindrical hot-wall LPCVD system by varying the deposition pressure and total flow rate. The texture and crystallographic orientation of the SiC were evaluated by XRD. The deposition rate increased linearly with the gas flow rate from 800 sccm to 1600 sccm. It also increased with the pressure but became saturated above a total pressure of 3.3 kPa. In the range of 3.3 - 10 kPa, the preferred orientation changed from the (220) and (311) planes to the (111) plane. The hardness and elastic modulus showed maximum values when the SiC had the (111) preferred orientation, though it gradually decreased upon a change to the (220) and (311) preferred orientations.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.294.2-294.2
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• 2016

Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).

• Journal of Power System Engineering
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• v.12 no.3
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• pp.55-59
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• 2008

In this paper, we have investigated on collection efficiency of fine particle of glass fiber-filter bag according to the surface treatment. The solution consisted of polytetrafluoroethylene(teflon), graphite powder, silicon resin and water was used as a basic surface treatment agent. Tensile strength of glass filter-bag increased with up to 3hrs and then decreased with surface treatment time. Tensile strength and initial modulus of the glass fiber-filter bag treated by iodine after basic surface treatment for 3hrs were lower than those of basic surface treatment for 3hrs, however collection efficiency and fracture strain were higher than those of basic surface treatment for 3hrs. Glass fiber-filter bag with lower initial modulus and more strain will be extend the durable period and the one treated by iodine after basic surface treatment 3or 3hrs is expected high collection efficiency of fine particle. This method makes it possible to manufacture glass fiber-filter bag of the optimum condition.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.271-284
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluminescence(PL), scanning electron microscopy (SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature 1500$^{\circ}C$ and C/Si flow ratio 2.0 of C3H3 0.2sccm & SiH4 0.3sccm. The growth rate of epilayers was about 1.0$\mu\textrm{m}$/h in the above growth condition.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.390-393
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• 1989

Diamond is synthesized from the gaseous mixture of carbon monoxide and hydrogen by microwave PECVD. $10{\times}10mm^2$ silicon wafers are used as the substrate,and it can be raised more than $900^{\circ}C$ by microwave absorption, radiation by plasma and bombardment of ions. The changes of the morphology and the growth rates of the deposits with the experimental conditions are examined by Scanning Electron Microscopy. The d values of all the deposited films concide with those of powder diffraction data in XRD. In Raman spectra, the peak of the deposit coincides with that of the natural diamond which has a value of 1332.5 $cm^{-1}$, and the broad peak from 1360 $cm^{-1}$to 1600 $cm^{-1}$which represents the amorphous graphite was observed in the higher concentration of carbon monoxide.

• Journal of Korea Foundry Society
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• v.18 no.4
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• pp.389-397
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• 1998

회주철 모재의 표면에 감압 플라즈마 용사법으로 실리콘 분말을 피복시킨 후 $CO_2$ 레이저를 이용하는 표면 합금화로 고온 내스케일성이 향상된 표면 개질층을 제조하였다. 실리콘의 표면 합금층에는 응집상의 흑연(chunky graphite)이 $Fe_5Si_3$로 구성된 망상의 화합물 기지속에 정출하는 조직특성을 보였다. 대기 분위기에서 18.0ks동안 열중량측정(TG)한 결과 실리콘 표면 합금층의 무게 증가율은 회주철 모재에 비하여 923K에서는 약 1/3, 1098K에서는 약 1/10을 나타내었다. 그리고 1098K에서 18.0ks동안 유지시킨 주철모재 시편에서 원래의 모재표면을 기준으로 다공성의 외부스케일과 편상흑연을 따라 생성된 내부스케일로 구성된 두께 $60{\sim}70\;{\mu}m$의 두꺼운 산화스케일이 생성되었으나, 실리콘의 표면 합금층에서는 두께 $3{\sim}5\;{\mu}m$의 치밀한 외부 산화스케일만이 생성되었다. 실리콘 합금층의 단면 미소경도값은 MHV $300{\sim}1100$으로 그 변동폭이 심하였으나, 진공분위기에서 열처리(1223K, 18.0ks)한 경우 미소경도값의 편차는 MHV $300{\sim}500$으로 개선되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.303-304
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• 2005

In this paper, we report a fluxless eutectic die bonding process which uses 80Au-20Sn eutectic alloy. The chip LEDs are picked and placed on silicon substrate wafers. The bonding process temperatures and force are $305\sim345^{\circ}C$ and 10$\sim$100gf, respectively. The bonding process was performed on graphite heater with nitrogen atmosphere. The quality of bonding are evaluated by shear test and thermal resistance. Results of fluxless eutectic die bonding show that shear strength is Max. 3.85kgf at 345$^{\circ}C$ /100gf and thermal resistance of junction to die bonding is Min. 3.09K/W at 325$^{\circ}C$/100gf.

• Journal of Powder Materials
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• v.24 no.1
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• pp.24-28
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• 2017

Silicon alloys are considered promising anode active materials to replace Li-ion batteries by graphite powder, because they have a relatively high capacity of up to 4200 mAh/g, and are environmentally friendly and inexpensive ECO-materials. However, its poor charge/discharge properties, induced by cracking during cycles, constitute their most serious problem as anode electrode. In order to solve these problems, Si-Ge-Al alloys with porous structure are designed as anode alloy powders, to improve cycling stability. The alloys are melt-spun to obtain the rapidly solidified ribbons, and then ball-milled to make fine powders. The powders are etched using 1 M HCl solution, which gives the powders a porous structure by removing the element Al. Subsequently, in this study, the microstructures and the characteristics of the etched powders are evaluated for application as anode materials. As a result, the etched porous powder shows better electrochemical properties than as-milled Si-Ge-Al powder.