• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.19 no.6
• /
• pp.57-63
• /
• 2019

S-parameters were used to analyze the effect of the circuit according to the height of the EMI shield layers. Among the S-parameters, S11, S21, S22, and S31 were used as factors for determining the effect on the circuit function. Simulations were performed using shields made of Graphite and Ferrite, and the frequencies were run from 100 MHz to 1 GHz. As the height of the shield was increased, the value of S21 was getting closer to 0 dB. In addition, the SE value was confirmed to improve the shielding performance according to the thickness of the insulating layer only in a specific frequency band. Based on 800um with thickest silicon dioxide thickness, the FG structure averaged -1 dB in narrow frequency bands between 100 MHz and 300 MHz, showing better efficiency than GF with an average of -2 dB. Although GF structures do not show high efficiency, they exhibit average performance of -3 dB in frequency bands between 100 MHz and 1 GHz rather than FG structures that sway over a wide range. In other words, FG and GF structures have trade-off structures. Therefore, it should be noted that the appropriate structure is selected for use.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.6
• /
• pp.588-593
• /
• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• Journal of the Korean Ceramic Society
• /
• v.27 no.1
• /
• pp.136-146
• /
• 1990

Whiskers of SiC were grown from the mixture of silica and graphite powders by Acheson method(direct heating method). The structrua, morphological and chemical characterizations have been performed by X-ray diffractometer(XRD), transmission electron microscopy(TEM), optical microscopy(OM), scanning electron microscopy(SEM), X-ray photoelectron spectroscopy(XPS) and energy dispersive spectrometer(EDS). The growth mechanism of SiC whiskers is also discussed.

• Journal of the Korean Chemical Society
• /
• v.10 no.2
• /
• pp.98-102
• /
• 1966

A spectrochemical method for the determination of the major impurities, such as aluminum, iron, magnesium and silicon, in rutile single crystals and variously doped rutile is presented. By applying higher current (12 amp) and a 1:2 sample-to-graphite dilution by weight, the elaborate sample preparation needed for conventional fusion technique was avoided, and relatively higher detection limits were established. Average deviations are approximately ${\pm}8%$ for iron and magnesium in the concentration ranges of 0.007 to 0.7% and 0.006 to 0.6% respectively, and ${\pm}5%$ for aluminum and silicon in the range of 0.005 to 0.5%.

• Journal of the Korean Ceramic Society
• /
• v.31 no.12
• /
• pp.1588-1598
• /
• 1994

The SiC/MoSi2 composite materials were fabricated by infiltrating the mixture of molybdenum disilicide and metal silicon(MoSi2+Si=100) to a porous compact of silicon carbide and graphite under the vacuum atmosphere of 10-1 torr. The specimen were oxidized in dry air under 1 atm at 130$0^{\circ}C$~150$0^{\circ}C$ for 240 hours. The oxidation behavior was evaluated by the weight gain and loss per unit area of the oxidized samples. Also, SEM and XRD analysis of the oxidized surface of the samples were carried out. With increasing the MoSi2 content and oxidation temperature, the passive oxidation was found. The trend of weight gain of all samples was followed the parabolic rate law with the formation of a protective layer of cristobalite on the surface.

• Journal of the Korean Ceramic Society
• /
• v.24 no.2
• /
• pp.147-154
• /
• 1987

Silicon nitride powders were prepared by the simultaneous reduction and nitridation from powder mixtures of Kim cheon quartzite and carbon (graphite or carbon black) at1400$^{\circ}C$ for 10 hours in nitrogen atmosphere. The effects of the reaction variables on the yield of products and on the ${\alpha}$/${\beta}$ ratio were examined. The average particle size, density, and the ${\alpha}$/${\beta}$ ratio of the obtained si3N4 were 1.0$\mu\textrm{m}$, 3.10g/㎤ and 90/10, respectively. It was found that the Si3N4 powders obtained in this work were comparable to the foreign commercial products.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.4
• /
• pp.182-186
• /
• 2003

The photovoltaic industry has been forced to lower the production cost in many ways. Ingot preparation technology is growing rapidly toward large-scale production. Multicrystalline silicon ingot of 69 cm square cross section, 240kg has been produced with fully automated equipment. During solidification, heat has been extracted from the bottom of the crucible through the graphite pedestal moving downward. The characteristics of the large ingot grown in this method are found to be uniform structurally and electrically.

• Journal of Korean Vacuum Science & Technology
• /
• v.3 no.1
• /
• pp.54-58
• /
• 1999

We deposited diamond-like carbon (DLC) films using ion beam sputtering of a graphite target on flat substrates for use as a thin film field emitter. An n-type silicon wafer, titanium-coated silicon, and indium tin oxide (ITO) coated glass were used as a substrate. All films exhibited a sudden increase in the emission after a breakdown occurred at high voltage. The morphology of the films after the breakdown depended on the substrate. On ITO and Ti substrates, the DLC film peeled off upon breakdown, but on the Si substrate the surface melting due to breakdown resulted in the formation of various structures such as a sharp point, mound, and crater. By scanning the deformed surface with a tip anode, we found that the emission was concentrated at the deformed sites, indicating that the field enhancement due to the morphology change was responsible for the increased emission.

• Journal of Korea Foundry Society
• /
• v.29 no.6
• /
• pp.257-264
• /
• 2009

The effects of silicon and molybdenum on the temperature-dependent properties of high silicon and high molybdenum ductile cast iron were investigated. Microstructure was composed of ferrite, cell boundary complex carbide, carbide precipitated in the grain and graphite. The number and size of carbide decreased with the increase of silicon content and increased with the increase of molybdenum content, however, the size of cell boundary carbide increased above 0.81wt%Mo. The room temperature tensile strength increased with the increase of silicon and molybdenum contents. That did not increase with the latter with more than 0.8wt%. Meanwhile the high temperature tensile strength showed the similar trend to that of room temperature one, that of the specimen with 0.55wt%Mo was the highest. The $A_1$ transformation temperature increased with the silicon and molybdenum contents, and showed similar tendency with the variation of strength. It was discussed due to the solubility limit of Molybdenum in ferrite, of which value was assumed to be in the vicinity of 0.81wt%Mo. The weight after oxidation at 1,173K showed the result caused by the difference in solubility of molybdenum in the matrix. That and the thickness change after oxidation did not show any consistent trend with the silicon and molybdenum contents.

• Electrical & Electronic Materials
• /
• v.7 no.4
• /
• pp.331-340
• /
• 1994

Polysilicon on insulator has been recrystallized by zone melting recrystallization method with graphite strip heaters. Experiments are performed with non-seed SOI structures. When the capping layer thickness of Si$\_$3/N$\_$4//SiO$\_$2/ is 2.0.mu.m, grain boundaries are about 120.mu.m spacing and protrusions reduced. After the seed SOI films are annealed at 1100.deg. C in NH$\_$3/ ambient for 3 hours, the recrystallized silicon surface has convex shape. After ZMR process, the tensile stress is 2.49*10$\^$9/dyn/cm$\^$2/ and 3.74*10$\^$9/dyn/cm$\^$2/ in the seed edge and seed center regions. The phenomenon of convex shape and tensile stress difference are completely eliminated by using the PSG/SiO$\_$2/ capping layer. The characterization of SOI films are showed that the SOI films are improved in wetting properties. N channel SOI MOSFET has been fabricated to investigate the electrical characteristics of the recrystallized SOI films. In the 0.7.mu.m thickness SOI MOSFET, kink effects due to the floating substrate occur and the electron mobility was calculated from the measured g$\_$m/ characteristics, which is about 589cm$\^$2//V.s. The recrystallized SOI films are shown to be a good single crystal silicon.