• Bulletin of the Korean Chemical Society
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• v.29 no.5
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• pp.1018-1024
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• 2008

Photolysis of 2-(pentamethyldisilanyloxy)phenylpentamethyldisilane 1 in methanol provides five photoproducts 3, 4, 5, 6, and 7. Compounds 3 and 4 were probably formed from the methanol addition reactions of silene intermediate 2 and the formation of 5, 6, and 7 can best be explained by the nucleophilic attack of methanol to silicon atom in pentamethyldisilanyloxy or pentamethyldisilanyl group of the photoexcited state of 1. Irradiation of 1 in n-hexane gives a photoproduct 6 via silyl radical intermediate 8 and a novel intramolecular cyclization photoproduct 11 via silene 9 and silyl radical intermediate 10. Irradiation of 1 in deaerated methylene chloride in the presence of acetone affords a novel photoproduct 11 and phenol 7 but the expected photoproducts from the reaction of the silene intermediate with acetone were not obtained.

• Journal of the Korean institute of surface engineering
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• v.40 no.5
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• pp.214-218
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• 2007

The objective of this study is to evaluate the diffusion behavior of Al and Si from a coatings in the microstucture of Fe-Si steel. Steel samples deposited with Al-Si alloy are prepared by ion plating process, followed by annealing treatments for diffusion at $1050^{\circ}C$. Several intermetallic phases are found in the coatings and they are identified as Fe-Al and an orderd Fe-Si compounds. Series of different concentration profiles through the sample have been obtained and Si content reaches about 5 wt% in case of 90 minutes of diffusion time.

• Bulletin of the Korean Chemical Society
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• v.30 no.6
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• pp.1331-1336
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• 2009

Photolysis of (2-hydroxyethoxyphenyl)pentamethyldisilane 2 in benzene provides a novel intramolecular cyclization photoproduct 9 which was probably formed from the intramolecular reaction to form a seven-membered ring in silatriene intermediate 7 and then the photochemical disrotatory ring closure of 1,3-butadiene moiety to cyclobutene. Irradiation of 2 in methanol afforded photoproducts 5 and 6 which were formed by the nucleophilic attack of methanol to $\beta$ or $\alpha$ silicon atom in pentamethyldisilanyl group of the photoexcited state of 2. Compounds 10 and 11 were also formed by the same way as in the formation of the photoproducts 5 and 6 in the photolysis of (2-allyloxyethoxyphenyl)pentamethyldisilane 3 in methanol solvent. Photoreaction of (2-acetoxyethoxyphenyl) pentamethyldisilane 4 in methanol gave a photoproduct 12 which was formed via the elimination of dimethylsilylene species in the photoexcited state of 4.

• Bulletin of the Korean Chemical Society
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• v.8 no.1
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• pp.6-9
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• 1987

The study of the $Na_3YSi_3O_9$ structure, by x-ray diffraction and infrared spectrum, showed that $Na_3YSi_3O_9$ is similar to $Na_4CaSi_3O_9$ except for its being pseudo-cubic instead of cubic. The peaks in the x-ray diffraction pattern of $Na_3YSi_3O_9$ could therefore be indexed on the basis of the $Na_4CaSi_3O_9$ cell. Also, modified $Na_3MSi_3O_9$ (M = Lu, Yb, Tm, Er, Y, Ho, Dy, Gd, Eu, and Sm) type compounds were synthesized by introducing excess sodium, decreasing M(III) concentration, and substituting small amount of phosphorus for silicon. The unit cell parameters of the composition $Na_{3.2}M_{0.7}Si_{2.9}P_{0.1}O_{8.7}$ were estimated from x-ray powder diffraction patterns using the Cohen method.

• Bulletin of the Korean Chemical Society
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• v.16 no.10
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• pp.915-923
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• 1995

The parameters for an empirical net atomic charge calculation method, Modified Partial Equalization of Orbital Electronegativity (MPEOE), were determined for the atoms in organosilicon compounds and zeolites. For the organosilicon family, the empirical parameters were determined by introducing both experimental and ab initio observables as constraints, these are the experimental and ab initio dipole moments, and the ab initio electrostatic potential of the organosilicon molecules. The Mulliken population was also introduced though it is not a quantum mechanical observable. For the parameter optimization of the atoms in the aluminosilicates, the dipole moments and the electrostatic potentials which calculated from the 6-31G** ab initio wave function were used as constraints. The empirically calculated atomic charges of the organosilicons could reproduce both the experimental and the ab inito dipole moments well. The empirical atomic charges of the aluminosilicates could reproduce the ab initio electrostatic potentials well also.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.169-175
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• 1998

The plasma etching of polysilicon was performed with the HBr/$Cl_2/He-O_2$ gas mixture. The residual layers after photoresist strip were investigated using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The etch residue was identified as silicon oxide deposited on the top of the patterned polysilicon. In order to clarify the formation mechanism of the etch residue, the effects of various gas mixtures such as $Cl_2/He-O_2$and HBr/$Cl_2$were investigated. We found that the etch residue is well formed in the presence of oxygen, suggesting that the etch residue is caused by the reaction of oxvgen and non-volatile silicon halide compounds. Wet cleaning and dry etch cleaning processes were applied to remove the polysilicon etch residue, which can affect the electrical characteristics and further device processes. XPS results show that the wet cleaning is suitable for the removal of the etch residue.

• Journal of the Korean Ceramic Society
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• v.44 no.8
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• pp.445-450
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• 2007

A conversion layer of SiC was fabricated on the graphite substrate by a chemical vapor reaction method in order to enhance the oxidation resistance of graphite. The effect of boron carbide containing powder bed on the morphology of SiC conversion layer was investigated during the chemical vapor reaction of graphite with the reactive silicon-source at $1650^{\circ}C\;and\;1700^{\circ}C$ for 1 h. The presence of boron species enhanced the conversion of graphite into SiC, and altered the morphology of the conversion layer significantly as well. A continuous and thick SiC conversion layer was formed only when the boron source was used with the other silicon compounds. The boron is deemed to increase the diffusion of SiOx in SiC/C system.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.459-459
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• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.450-455
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• 2000

For further scaling down of the silicon devices, the application of low dielectric constant materials instead of silicon oxide has been considered to reduce power consumption, crosstalk, and interconnection delay. In this paper, the effect of $O_2/SF_6$ plasma chemistry on the etching characteristics of polyimide-one of the promising low-k interlayer dielectrics-has been studied. The etch rate of polyimide decreases with the addition of $SF_6$ gas due to formation of nonvolatile fluorine compounds inhibiting reaction between oxygen and hydrocarbon polymer, while applying substrate bias enhances etching process through physical attack. However, addition of small amount of $SF_6$ is desirable for etching topography. $SiO_2$ hard mask for polyimide etching is effective under $O_2$plasma etching(selectivity~30), while $O_2/SF_6$ chemistry degrades etching selectivity down to 4. Based on the above results, $1-2\mu\textrm{m}$ L&S PI2610 patterns were successfully etched.

• Journal of the Korean Chemical Society
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• v.38 no.3
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• pp.241-245
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• 1994

The oxidative addition reaction has been employed to synthesize heteropolynuclear compounds containing Si-M bonding interaction between the silicon atom of silatrane, pentacoordinate silicon derivative with transannular Si-N dative bond, and the main group element. The reaction of $SnBr_2 with 1-bromosilatrane(1a) in acetonitrile gives the mixture of yellow(2a) and white(2b) solids which were isolated and charaterized by ^1H-NMR, ^{29}Si-NMR, ^{119}Sn-NMR and Mass spectroscopy. The yellow compound was characterized as 1-tribromotinsilatrane which had Si-Sn bonding interaction. The reaction of SnBr2 with 1-bromo-3,7,10-trimethylsilatrane(1b) in methanol gives the Sn(Ⅳ) complex, N[CH_2CH(CH_3)O]_3SiSnBr_3(CH_3OH)_2(3),$ which was characterized by various means.