• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.5
• /
• pp.353-357
• /
• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.89-93
• /
• 1995

Effects of hydrogenation in amorphous silicon rile growths on Solid Phase Crystallization (SPC) was investigated using x-ray diffractometry, energy dispersive Spectroscopy, and Raman spectrum. Interdiffusion of barium(Ba) and aluminum(Al) compounds of corning substrate was observed in both of rf sputtering and LFCVD films under the low temperature(580$^{\circ}C$) annealing. Low degree of crystallinity resulted from the interdiffusion was obtained. Highly applicable degree of crystallinity was obtained through the mechanical damage induced surface activation on amorphous silicon films. X-ray diffraction intensity of (111) orientation was used to characterize the degree of crystallinity of SPC. Nucleation and growth rate in SPC could be controllable through the employed surface treatment. IIydrogenated LPCVD films showed the superior crystallinity to non-hydrogenated sputtering films. Insignificant effects of activation treatment in sputtered film was of activation treatment in sputtered film was observed on SPC.

• Journal of Medicine and Life Science
• /
• v.20 no.2
• /
• pp.83-88
• /
• 2023

Metal artifacts cause inaccuracies in target delineation, radiation treatment planning, and delivery when computed tomography images of a radiotherapy patient implanted with a high-density material in the body are acquired. In this study, we investigated the possibility of obtaining improved images in clinical trials through metal artifact reduction using silicon impression materials without the need for a specific metal artifact reduction algorithm. A silicon impression material exhibiting a constant Hounsfield unit (HU) value according to the mixing ratio of the catalysts and bases was selected. The material did not exhibit any change in weight or shape over time. For both the instances of inserting the metal material and applying the silicon impression material, the HU value and dose were compared with homogeneous cases filled with water-equivalent materials. When the silicon impression material was applied to the region where the high-density material was located, the HU value was within 5% and the dose was within 3% compared with those of the homogeneous cases. In this study, the silicon impression materials reduced metal artifacts. However, because the composition, shape, size, and location of high-density materials differ, further studies are required to consider these factors in clinical applications.

• Journal of Photoscience
• /
• v.10 no.3
• /
• pp.257-261
• /
• 2003

We have systematically studied the evolution of the photoluminescence(PL) tuning of porous silicon(PS) by electrochemical etching in various mixed electrolytes. The electrolytes employed as an etchants were mixtures of HF:CH$_3$COOH:HNO$_3$:C$_2$H$\_$5/OH solutions where the composition ratios (%) were varied from 10:1.98:0:88.02 to 10: 1.98:8.4:79.62 under constant concentration of HF and CH$_3$COOH with a total volume of 100 ml. Changes in the surface morphology of the samples caused by variations in the etching process were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). After samples are etched in various mixed electrolytes, FTIR analyses show that there is the non-photoluminescent state and the photoluminescent state simultaneously. The PL spectra show the PL tuning in the ranging from 560 to 700 nm with the increase of HNO$_3$ concentration. An analysis of the subsequent PL relaxation mechanism was carried out by time-correlated single photon counting (TCSPC) method. Based on experimental results, it is assumed that a red shift of the main PL peak position is related to the HNO$_3$ activated formation of silicon oxygen compounds. Therefore, the use of electrolyte mixtures with composition ratios can be obtained adequate and reproducible results for PL tuning.

• Fire Science and Engineering
• /
• v.34 no.1
• /
• pp.1-10
• /
• 2020

In this study, boron/silicon sol compounds were applied to wood for construction and durable materials, and fire risks were investigated in terms of smoke performance index (SPI), smoke growth index (SGI), and smoke intensity (SI). The compound was synthesized by reacting tetraethoxyorthosilicate with boric acid and boronic acid derivatives. Smoke characteristics were investigated using a cone calorimeter (ISO 5660-1) equipment for cypress wood. The fire intensity fixed the external heat flux at 50 kW/㎡. The smoke performance index measured after the combustion reaction increased between 13.4% and 126.7% compared with cypress wood. The fire risk due to the smoke performance index decreased in the order of cypress, phenylboronic acid/silicon sol (PBA/Si), (2-methylpropyl) boronic acid/silicon sol (IBBA/Si), boric acid/silicon sol (BA/Si). The smoke growth index decreased between 12.0% and 57.5% compared to the base specimen. The risk of fire caused by the smoke growth index decreased in the order of cypress, PBA/Si, IBBA/Si, BA/Si. The fire risk due to smoke intensity decreased between 3.2% and 57.8%, and in the order of cypress, PBA/Si, IBBA/Si, BA/Si. CO_peak concentrations ranged between 85 and 93 ppm, and decreased between 37% and 43% compared to the base specimen. A comprehensive assessment of the fire risk on smoke hazards decreased in the order of cypress, PBA/Si, IBBA/Si, BA/Si.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.22 no.3_1spc
• /
• pp.504-508
• /
• 2013

This paper describes in detail the life prediction models and simulations of thermal fatigue under different mold compounds and chip sizes for wafer-level embedded SiP. Three-dimensional finite element models are built to simulate the viscoplastic behaviors for various mold compounds and chip sizes. In particular, the bonding parts between a mold and silicon nitride (Si3N4) are carefully modeled, and the strain distributions are studied. Three different chip sizes are used, and the effects of the mold compounds are observed. Through the numerical studies, it is found that type-C, which has a relatively lower Young's modulus and higher CTE, has a better fatigue life than the other mold compounds. In addition, the $4{\times}4$ chip has a shorter life than the $6{\times}6$ and $8{\times}8$ chips.

• Journal of the Korean institute of surface engineering
• /
• v.33 no.2
• /
• pp.77-86
• /
• 2000

In this study effects of La starting compounds and substrates on the densification of (P $b_{0.92}$L $a_{0.05}$)Ti $O_3$ thin films were investigated. After the heat treatment on platinized silicon at $650^{\circ}C$ for 30min thickness of PLT(i) thin films (from La-isopropoxide) shrank by 27%, while 33% reduction occurred for PLT (a) thin films (from La-acetate). These PLT(i) films showed less densified surface microstructure compared to the PLT (a) . Lower shrinkage of the films on platinized silicon than on bare silicon (41% and 40% for PLT (i) and PLT (a) respectively) is attributed to the earlier development of crystallinity in the film, which arrests film densification. In order to maximize sintering before crystallization, heat treatment at $400^{\circ}C$ for 3 hours followed by $650^{\circ}C$ for 30 min was attempted. This method increased the shrinkage of the PLT (i) and PLT (a) films two times and 1.5 times as much as that observed for the films heat treated at $650^{\circ}C$ for 30min, respectively. FTIR results indicated that first pyrolysis in the film is associated with the burning of acetate ligands. Condensation reaction between OHs was found to occur preferentially between $350^{\circ}C$ and $450^{\circ}C$, whereas majority of polycondensation between ROH-OH appears to occur until $300^{\circ}C$ and be completed below $450^{\circ}C$.EX>.

• Biotechnology and Bioprocess Engineering:BBE
• /
• v.9 no.2
• /
• pp.118-126
• /
• 2004

Recombinant E.coli ACV 1003 (recA::lacZ) releasing ${\beta}$-galactosidase by a SOS regulon system, when exposed to DNA-damaging compounds, have been used to effectively monitor endocrine disruptors. Low enzyme activity of less than 10 units/mL, corresponding to a $\mu\textrm{g}$/L(ppb) range of an endocrine disruptor (tributyl tin, bisphenol A. etc.), can be rapidly determined, not by a conventional time-consuming and tedious enzyme assay, but by an alternative interferometric biosensor. Heavily boron-doped porous silicon for application as an interferometer, was fabricated by etching to form a Fabry-Perot fringe pattern, which caused a change in the refractive index of the medium including ${\beta}$-galactosidase. In order to enhance the immobilization of the porous silicon surface, a calyx crown derivative (ProLinker A) was applied, instead of a conventional biomolecular affinity method using biotin. This resulted in a denser linked formation. The change in the effective optical thickness versus ${\beta}$-galactosidase activity, showed a linear increase up to a concentration of 150 unit ${\beta}$-galactosidase/mL, unlike the sigmoidal increase pattern observed with the biotin.

• Journal of the Mineralogical Society of Korea
• /
• v.20 no.3
• /
• pp.155-163
• /
• 2007

A novel route to the synthesis of tetramethoxysilane and other silicon alkoxides is described using siliceous mudstone as the raw material. The reaction of amorphous silica with triethanol-amine is enhanced by using an alkali metal hydroxide catalyst to form a range of triethanol-amnine-substituted silatrane species. These can undergo alkoxide exchange in acidic alcohols to form alkoxysilatranes, tetraalkoxysilanes, hexaalkoxydisiloxanes and higher siloxanes. Products were identified by FT-IR spectroscopy, XRD, SEM, 1H and 13C NMR spectroscopy, or gas chromatography.

• Bulletin of the Korean Chemical Society
• /
• v.5 no.1
• /
• pp.32-37
• /
• 1984

The photoreaction of 2, 3-benzo-1, 1-diphenyl (or dimethyl)-1-sila-2-cyclobutene (9 or 10) with an aldehyde or ketone results in 1:1 cycloadduct of [4 + 2] type. In the reactions of 2, 3-benzo-1, 1-dimethyl-1-sila-2-cyclobutene (10) with acetone and butanone, another 1:1 adducts (13) were also formed, respectively. The following facts indicate that the formation of adduct involves an attack of a triplet carbonyl compound on the silicon of the benzosilacyclobutene, an $S_H2$ process. (1) Even when the reaction of 9 with acetophenone was carried out under conditions such that more than 99% of incident light was absorbed only by acetophenone using the filter solution of aq. cupric sulfate, the same adduct was still formed. (2) When the reaction of 9 with acetone was carried out under oxygen atmosphere, only trace amount of adduct was formed.