• Journal of Integrative Natural Science
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• v.3 no.3
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• pp.153-156
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• 2010

Oxidation behaviors of porous silicon were investigated by the measurement of area of $SiO_2$ vibrational peaks in FT-IR spectra during thermal oxidation of porous silicon at corresponding temperatures. Visible photoluminescent porous silicon samples were obtained from an electrochemical etch of n-type silicon of resistivity between 1-10 ${\Omega}/cm$. The etching solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF. The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Etching was carried out as a two-electrode galvanostatic procedure at applied current density of 200 $mA/cm^2$ for 5 min. The porosity of samples prepared was about 80%. After formation of porous silicon, the samples were thermally oxidized at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$, respectively. The growth rate of $SiO_2$ layer of porous silicon was investigated by using FT-IR spectroscopy. The effect of oxidation of porous silicon was presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.7-12
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• 2000

This paper presents the electrochemical etch-stop characteristics of single-crystal silicon in a tetramethyl ammonium hydroxide(TMAH):isopropyl alcohol(IPA):pyrazine solution. Addition of pyrazine to a TMAH:IPA etchant increases the etch-rate of (100) silicon, thus the elapsed time for etch-stop was shortened. The current-voltage (I-V) characteristics of n- and p-type silicon in a TMAH:IPA:pyrazine solution were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type silicon, respectively, were obtained and applied potential was selected between n- and p-type silicon PP. The electrochemical etch-stop is applied to the fabrication of 801 microdiaphragms having $20{\mu}m$ thickness on a 5-inch silicon wafer. The averge thicknesses of 801 microdiaphragms fabricated on the one wafer were $20.03{\mu}m$ and standard deviation was ${\pm}0.26{\mu}m$. The silicon surface of the etch-stopped microdiaphragm was extremely flat without noticeable taper or other nonuniformities. The benefits of the electrochemical etch-stop in a TMAH:IPA:pyrazine solution become apparent when reproducibility in the microdiaphragm thickness for mass production is considered. These results indicate that the electrochemical etch-stop in a TMAH:IPA:pyrazine solution provides a powerful and versatile alternative process for fabricating high-yield silicon microdiaphragms.

• Journal of the Korean Ceramic Society
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• v.42 no.5 s.276
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• pp.359-365
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• 2005

Silicon nitride coating films with various ratios of nitrogen to silicon contents were prepared and characterized. The film was coated on silicon substrate by sputtering method with changing nitrogen gas flow rate in a chamber. The nitrogen to silicon ratio was found to have values in a range from 0 to 1.4. Coated film was characterized with scanning electron microscopy, transmission electron microscopy, electron probe microanalysis, nanoindentation scanning probe microscopy, x-ray photon spectrometry, and Raman spectrometry. Silicon nitride phase in all samples showed amorphous nature regardless of N/Si ratio. When N/Si ratio was 1.25, hardness and elastic modulus of silicon nitride film showed maximum with 22 GPa and 210 GPa, respectively. Those values decreased, when N/Si ratio was higher than 1.25. Raman spectrum showed that no silicon phase exist in the film. XPS result showed that the silicon-nitrogen bond was dominant way for atomic bonding in the film. The structure and property was explained with Random Bonding Model(RBM) which was consistent with the microstructure and chemistry analysis for the coating films.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.1-211.1
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• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• Journal of Integrative Natural Science
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• v.3 no.2
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• pp.78-83
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• 2010

DBR/Host dual porous silicons containing DBR and host structure were prepared and their optical properties were characterized using Ocean Optics spectrometer. In this dual porous silicon, single porous silicon layer was used as host layer for possible biomolecule and drug materials and DBR porous silicon layer was used for signal transduction due to the recognition of molecules. Optical reflection spectrum of dual porous silicon displayed only DBR reflection but Fabry-Perot fringe pattern. DBR reflection band of dual porous silicon shifted to the shorter wavelength as the etching time of host layer increased. Cross-sectional FE-SEM image of dual porous silicon displayed a thickness of about 20 micrometer for DBR porous silicon layer. Developed etching technology could be useful to prepare DBR porous silicon which exhibited specific reflection resonance at the required wavelength and to provide an label-free biosensors and drug delivery materials.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.539-543
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• 2014

Foam type porous silicon carbide ceramics were fabricated by a polymer replica method using polyurethane foam, carbon black, phenol resin, and silicon powder as raw materials. The influence of the C/Si mole ratio of the ceramic slurry and heat treatment temperature on the porous silicon carbide microstructure was investigated. To characterize the microstructure of porous silicon carbide ceramics, BET, bulk density, X-ray Powder Diffraction (XRD), and Scanning Electron Microscope (SEM) analyses were employed. The results revealed that the surface area of the porous silicon carbide ceramics decreases with increased heat treatment temperature and carbon content at the $2^{nd}$ heat treatment stage. The addition of carbon to the ceramic slurry, which was composed of phenol resin and silicon powder, enhanced the direct carbonization reaction of silicon. This is ascribed to a consequent decrease of the wetting angles of carbon to silicon with increasing heat treatment temperature.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.149-153
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• 2019

The technology of electronic packaging among semiconductor technologies is evolving as an axis of the market in its own field beyond the simple assembly process of the past. In the field of electronic packaging technology, the packaging of power modules plays an important role for green electric vehicles. In this power module packaging, the thermal reliability is an important factor, and silicon nitride plays an important part of package substrates, Silicon nitride is a compound that is not found in nature and is made by chemical reaction between silicon and nitrogen. In this study, this core material, silicon nitride, was fabricated by reaction bonded silicon nitride. The fabricated silicon nitride was studied for thermo-mechanical properties, and through this, the structure of power module packaging was made using reaction bonded silicon nitride. And the characteristics of stress were evaluated using finite element analysis conditions. Through this, it was confirmed that reaction bonded silicon nitride could replace the silicon nitride as a package substrate.

• Journal of Industrial Technology
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• v.2
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• pp.13-19
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• 1982

Polycrystalline silicon layers have been deposited by a chemical vapor deposition technique using $SiCl_4$, $H_2$ gas mixture on single crystal silicon substrates. In this work, the effects of depostion temperature and total flow rate on the deposition rate of polycrystalline silicon are investigated. From the experimental results it was found that the formation reaction of polycrystalline silicon was limited by surface reaction and mass transfer controlled as the deposition temperature was increased. The morphology of polycrystalline silicon layer changed from a fine structure to a coarse one as the deposition temperature was increased.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1085-1088
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its I-V and C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/Oxidized porous silicon/porous silicon/Silicon/Al, where the silicon substrate is etched anisotropically to be prepared into a membrane shape. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator- semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.1
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• pp.23-27
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• 2005

We observed that optical properties of silicon changed under high dose electron irradiation at 250 keV. Our experimental results revealed that the optical transmission through a silicon wafer is significantly increased by electron irradiation. Transmission increase by the change in the absorption coefficient is explained through an analogy with amorphous silicon. Moreover, solar cell open-circuit voltages indicated that defects were generated by electron irradiation, and that the defects responded to annealing. Our results demonstrated that the optical properties of silicon can be controlled by a combination of electron irradiation and hydrogen annealing.