• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.901-908
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• 1995

In aqueous slurry processing of silicon nitride, the interaction of dispersant and binder used as polymeric processing additives on the silicon nitride particle surface was studied to identify the effect of these processing polymeric additives on the ceramic powder processing. The adsoprtion isotherm study of anionic organic molecule as dispersant and nonionic organic molecules as binder of silicon nitricde was studied to investigate the effect of these processing organic additives on the physicochemical properties of silicon nitride particles. As anionic molecule adsorbed onto silicon nitrice surface, the IEP of silicon nitride shifted toward acidic pH and changed the stability of silicon nitride particle. However, the adsorption of binder as nonionic organic molecule onto silicon nitride surface did not changed the IEP but caused the decrease of electrostatic potentials of silicon nitride. These distinctive adsorption behaviors of organic additives on silicon nitride particles can be closely correlated to the stability of silicon nitride particles suspended in aqueous media.

• Journal of Electrochemical Science and Technology
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• v.2 no.3
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• pp.157-162
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• 2011

We report a simple route for synthesizing multi-dimensional structured silicon anode materials from commercially available bulk silicon powders via metal-assisted chemical etching process. In the first step, silver catalyst was deposited onto the surface of bulk silicon via a galvanic displacement reaction. Next, the silver-decorated silicon particles were chemically etched in a mixture of hydrofluoric acid and hydrogen peroxide to make multi-dimensional silicon consisting of one-dimensional silicon nanowires and micro-scale silicon cores. As-synthesized silicon particles were coated with a carbon via thermal decomposition of acetylene gas. The carbon-coated multi-dimensional silicon anodes exhibited excellent electrochemical properties, including a high specific capacity (1800 mAh/g), a stable cycling retention (cycling retention of 89% after 20 cycles), and a high rate capability (71% at 3 C rate, compared to 0.1 C rate). This process is a simple and mass-productive (yield of 40-50%), thus opens up an effective route to make a high-performance silicon anode materials for lithiumion batteries.

• Journal of the Korean Ceramic Society
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• v.20 no.2
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• pp.166-172
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• 1983

In this study the sillicon-alloyed isotropic pyrolytic carbon was deposited in the tumbling bed from the pyrolysis of propane and silicon tetrachloride and investigated whether the silicon-alloyed isotropic pyrolytic carbon deposited in this study was usable as bionaterial or not. The silicon-allyed isotropic pyrolytic carbon was varied by controlling the process variables such as propane con-concentration and the argon flow rate flowing in to the silicon tetrachloride bubbler at a fixed reaction bed tempera-ture of 120$0^{\circ}C$ a rotation of reaction tube of 40 rpm a bed particle weight of 7.5 g and a total flow rate of 21/min; the propane concentration was varied from 10 to 70 and the argon flow rate flowing into the silicon tetrachloride bubble from 0 to 1000 cc/min. The results show that the silicon-alloyed isotropic pyrolytic carbon was obtained at all conditions investigated, . And then the alloyed silicon content is rangion from 7 to 14.5 wt%. The density and deposition rate of deposited silicon-alloyed isotropic carbon increased axxording to silicon content and propane concentration. And the apparent crystal-size(Lc) of pyrolytic carbon is not changed with silicon content. The density and apparant crystallite size are respec-tively in the range of 1.94 to 2.06 and 20 to 25$\AA$ It is shown that the silicon-alloyed isotropic pyrolytic carbon ob-tained in this experiment is usable as biomaterial.

• Resources Recycling
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• v.31 no.5
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• pp.52-58
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• 2022

Silicon carbide powder was prepared from carbon black and silicon recovered from waste solar panels. In the solar power generation market, the number of crystalline silicon modules exceeds 90%. As the expiration date of a photovoltaic module arrives, the development of technology for recovering and utilizing silicon is very important from an environmental and economic point of view. In this study, silicon was recovered as silicon carbide from waste solar panels: 99.99% silicon powder was recovered through purification from a 95.74% purity waste silicon wafer. To examine the synthesis characteristics of SiC powder, purified 99.99% silicon powder and carbon powder were mixed and heat-treated (1,300, 1,400 and 1,500 ℃) in an Ar atmosphere. The characteristics of silicon and silicon carbide powders were analyzed using particle size distribution analyzer, XRD, SEM, ICP, FT-IR, and Raman analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.137-139
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• 2008

Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

• ETRI Journal
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• v.25 no.2
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• pp.73-80
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• 2003

This paper describes an effective method for forming silicon oxide on silica-on-silicon platforms, which results in excellent characteristics for hybrid integration. Among the many processes involved in fabricating silica-on-silicon platforms with planar lightwave circuits (PLCs), the process for forming silicon oxide on an etched silicon substrate is very important for obtaining transparent silica film because it determines the compatibility at the interface between the silicon and the silica film. To investigate the effects of the formation process of the silicon oxide on the characteristics of the silica PLC platform, we compared two silicon oxide formation processes: thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). Thermal oxidation in fabricating silica platforms generates defects and a cristobalite crystal phase, which results in deterioration of the optical waveguide characteristics. On the other hand, a silica platform with the silicon oxide layer deposited by PECVD has a transparent planar optical waveguide because the crystal growth of the silica has been suppressed. We confirm that the PECVD method is an effective process for silicon oxide formation for a silica platform with excellent characteristics.

• Proceedings of the Korean Society of Plant Pathology Conference
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• 2005.10a
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• pp.15-20
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• 2005

Locations of silicon accumulation in rice leaves and its possible association with resistance to rice blast were investigated by analytical electron microscopy and atomic force microscopy. A blast-susceptible cultivar, Jinmi, and partially resistant cultivars, Hwaseong and Suwon345, were grown under a hydroponic culture system with modified Yoshida's nutrient solution. Electron-dense silicon layers were frequently found beneath the cuticle in epidermal cell walls of silicon-treated plants. Increasing levels of silicon were detected in the outer regions of epidermal cell walls. Silicon was present mainly in epidermal cell walls, middle lamella, and Intercellular spaces within subepidermal tissues. Furthermore, silicon was prevalent throughout the leaf surface with relatively small deposition on stomatal guard cells in silicon-treated plants. Force-distance curve measurements revealed relative hardness and smaller adhesion force in silicon-treated plants (18.65 uN) than control plants (28.39 uN). Moreover, force modulation microscopy showed higher mean height values of elastic Images In silicon-treated plants(1.26 V) than in control plants (0.44 V), implying the increased leaf hardness by silicon treatment. These results strongly suggest that silicon-induced cell wall fortification of rice leaves may be closely associated with enhanced host resistance to blast.

• Carbon letters
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• v.5 no.3
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• pp.108-112
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• 2004

Effect of silicon infiltration on the bend and tensile strength of 2D cross-ply carbon-carbon composites are studied. It is observed that bend strength higher than tensile strength in both types of composite is due to the different mode of fracture and loading direction. After silicon infiltrations bend and tensile strength suddenly decreases of carbon-carbon composites. This is due to the fact that, after silicon infiltration, silicon in the immediate vicinity of carbon forms the strong bond between carbon and silicon by formation silicon carbide and un-reacted silicon as free silicon. Therefore, these composites consist of three components carbon, silicon carbide and silicon. Due to mismatch between these three components secondary cracks developed and these cracks propagate from $90^{\circ}$ oriented plies to $0^{\circ}$ oriented plies by damaging the fibers (i.e., in-situ fiber damages). Hence, secondary cracks and in-situ fiber damages are responsible for degradation of mechanical properties of carbon-carbon composites after silicon infiltration which is revealed by microstructure investigation study by scanning electron microscope.

• Korean Journal of Metals and Materials
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• v.50 no.12
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• pp.907-911
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• 2012

High purity silicon can be obtained from Al-Si alloys by a combination of solvent refining and centrifugation. Silicon purification by crystallization of silicon from an Al-Si alloy melt was carried out using 2N and 4N purity aluminum and 2N purity silicon as raw materials. The effect of the purity of raw materials on the final silicon ingot purity by centrifugation was investigated for an Al-50 wt% Si alloy. Alloys were melted using an electrical resistance furnace, and then poured into a centrifuging apparatus. A silicon lump like foam was obtained after centrifugation and was leached by an acid in order to get pure silicon flakes. Then silicon flakes were melted to make a silicon ingot using an induction furnace. The purities of the silicon flakes and silicon ingot were enhanced significantly compared to those of the raw materials of silicon and aluminum. The silicon ingot made of 4N aluminum and 2N silicon showed the lowest impurities.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.6
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• pp.1036-1038
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• 1994

In this paper, a silicon piezoresistive accelerometer is designed and fabricated using a silicon direct bonded wafer. The accelerometer consists of a seismic mass and four cantilevers, and is fabricated mainly by the anisotropic etching method using EPW as an etchant. The measured sensitivity and the resonant frequency are 0.02 mV/V.g and 3.4 kHz, respectively. The nonlinearity is less than $\pm$0.3% of the full scale of the output.