• 공업화학
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• 제24권5호
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• pp.443-455
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• 2013

혼합되지 않는 두 용액 사이의 계면(interface between two immiscible electrolyte solutions, ITIES)에서의 전하 이동 반응에 대한 전기화학적 연구는 이온 검출용 센서, 바이오센서, 생체막 모델링, 약물 전달 반응, 상전이 촉매반응, 연료 생성, 태양에너지 전환 등을 포함한 다양한 연구 분야에 적용이 가능하기 때문에 크게 주목받고 있다. 특히 ITIES에서의 이온 전이 반응을 이용하여 이온물질 및 생물질 등을 검출할 수 있는 센서로 개발하기 위해 불안정한 ITIES의 한 쪽 액체층을 젤(gel)화하여 안정화하고, 마이크로 계면 형성을 통해 전압강하를 최소화 시키는 등의 연구가 활발하게 이루어졌다. 본 총설에서는 ITIES 계면에서의 이온 전이 반응을 이용하여 개발된 다양한 센서의 원리와 응용 및 발전 가능성에 대해 다루고자 한다. ITIES 계면을 (i) 보편적인 액체/액체 계면형, (ii) 마이크로피펫 팁형, (iii) 고분자 박막에 형성된 단일 마이크로홀 또는 마이크로홀 어래이형 및 (iv) 실리콘 기판에 제작된 마이크로홀 어래이형으로 분류하고, 이들 계면에서의 직접적인 이온 전이 반응과 보조 이온 전이 반응을 활용하여 수질 환경 오염의 원인이 되는 이온 및 농약 성분을 선택적으로 검출할 수 있는 이온 선택성 센서와 생물질을 분석할 수 있는 바이오센서 개발 연구에 대해 초점을 두고 소개하려 한다.

• 한국산학기술학회논문지
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• 제15권5호
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• pp.3345-3350
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• 2014

춘계 진해만에서 식물플랑크톤의 분포특성에 영향을 미치는 영양염 농도 및 거동을 파악하기 위해서 총 23개 정점에서 2010과 2011년에 현장조사를 수행하였고, 지리지형학 특성과 오염물 부하를 고려하여 4개의 구역으로 구분하여 평가하였다. 진해만 광역해역에서 해역별 영양염 제한은 해수 순환이 원활한 중앙해역인 구역 II에서 80% 이상으로 가장 높게, 다음으로 서남해역의 구역 III과 IV에서는 17%-83%의 중간정도로 나타났으며, 마산만 인근의 반폐쇄적인 구역 I에서는 35% 이하로 낮게 관찰되었다. 연도별 영양염 공급원으로는 2010년에는 오 폐수 등에 의한 질소기원 영양염의 유입이 높은 비중을 차지하였고, 2011년에는 강우에 의한 담수유입에 의하여 해역의 저염분화와 더불어 질소, 규소, 인 계열의 영양염이 동시에 유입되었다. 특히 2010년에는 질소계열의 영양염과 규조류(Pseudo-nitzchia spp.)의 높은 상관성을 보였고, 2011년에는 모든 영양염과 규조류 (Leptocylindrus danicus)와 높은 관련성이 있었다. 결과적으로 춘계 진해만에 유입되는 질소 계열의 영양염은 규조류의 성장에 중요한 영향을 미쳤으며, 그들의 빠른 영양염 섭취(uptake)로 인하여 해역에 따라서 영양염 절대농도 뿐 만 아니라, 영양염 구성성분비의 제한을 일으킬 수 있다는 것을 파악하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.268-268
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• 2016

Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

• 대한화학회지
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• 제37권11호
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• pp.943-950
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• 1993

8.0 ${\times}\;10^{-2}$ M catechol이 들어있는 5.0 ${\times}\;10^{-2}$ M 과염소산 지지전해질 용액속에서 네모파 산하전극벗김 전압전류법으로 게르마늄의 미량분석을 조사하였다. ppb 수준의 분석에서는 석출시간 120초, 석출전위 -0.9 volts, 주파수 100Hz일 때 가장 적합하였다. 구리와 납, 실리콘 같은 금속이온이 상당량 존재하여도 공존이온이 영향을 받지 않고 게르마늄의 분석이 가능하였다. 검량선은 0.40 ppb 에서 2.0 ppm 범위까지 양호한 직선성을 보였으며, 검출한계는 0.080 ppb 이였다. 이 방법은 분석시간이 짧고 감도가 좋기 때문에 미량 게르마늄 분석에 유용하였다

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.288-288
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• 2013

Lithium-ion battery (LIB) is one of the most important rechargeable battery and portable energy storage for the electric digital devices. In particular, study about the higher energy capacity and longer cycle life is intensively studied because of applications in mobile electronics and electric vehicles. Generally, the LIB's capacity can be improved by replacing anode materials with high capacitance. The graphite, common anode materials, has a good cyclability but shows limitations of capacity (~374 mAh/g). On the contrary, silicon (Si) and germanium(Ge), which is same group elements, are promising candidate for high-performance LIB electrodes because it has a higher theoretical specific capacity. (Si:4200 mAh/g, Ge:1600 mAh/g) However, it is well known that Si volume change by 400% upon full lithiation (lithium insertion into Si), which result in a mechanical pulverization and poor capacity retention during cycling. Therefore, variety of nanostructure group IV elements, including nanoparticles, nanowires, and hollow nanospheres, can be promising solution about the critical issues associated with the large volume change. However, the fundamental research about correlation between the composition and structure for LIB anode is not studied yet. Herein, we successfully synthesized various structure of nanowire such as Si-Ge, Ge-Carbon and Si-graphene core-shell types and analyzed the properties of LIB. Nanowires (NWs) were grown on stainless steel substrates using Au catalyst via VLS (Vapor Liquid Solid) mechanism. And, core-shell NWs were grown by VS (Vapor-Solid) process on the surface of NWs. In order to characterize it, we used FE-SEM, HR-TEM, and Raman spectroscopy. We measured battery property of various nanostructures for checking the capacity and cyclability by cell-tester.

• Restorative Dentistry and Endodontics
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• 제17권1호
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• pp.104-114
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• 1992

The purpose of this study was to evaluate the shear bond strength of glass ionomer cement(Ketacfil, ESPE, Co.) against dentin surface which had been treated with surface conditioning agents(distilled water, 5% sodium hypochlorite solution, Ketac - conditioner, 40% polyacrylic acid). In this study, 60 human molars with sound and healthy crown portion which were previously extracted for orthodontic or periodontal problem. The dentin surfaces of these teeth were exposed with wet trimmer and polished with 150 - grit and 600 - grit silicon carbide paper and the teeth were divided into four groups(15 teeth per group) according to the following surface conditioning methods. Group I : Surface treatment with distilled water as control group. Group II : Surface conditioning with 5% sodium hypochlorite solution. Group III : Surface conditioning with Ketac conditioner. Group IV : Surface conditioning with 40% polyacrylic acid. The shear bond strengths were measured by Autograph(Shimatzu Co. Japan). The result of the evaluations were then subjected to statistical analysis using one - way analysis of variance and Duncan test and the results were as follows : 1. The shear bond strength accrding to the dentin surface conditioning conditions was highest in Ketac conditioner group, with measurements of $44.44{\pm}0.74(kg/cm^2)$ and lowest in the distilled water group, with measurements of $28.84{\pm}0.88(kg/cm^2)$. 2. Statistically significant differences were found between surface conditioning with 5% sodium hypochlorite solution group or Ketac conditioner group and distilled water group(P<0.01). 3. Also, statistically significant difference was found between surface conditioning with distilled water group and 40% polyacrylic acid group(P<0.05). 4. Overall difference in statistical significance between the groups was not found (P<0.05). 5. Fractured dentin surface treated with conditioning solutions showed cohesive fracture. 6. Distilled water group and 5% sodium hypochlorite solution group removed the smear layer less effectively. 7. Conditioning dentin with Ketac conditioner and 40% polyacrylic acid resulted in the removal of a significant amount of the smear layer without removing the tubular plugs and dissolving the peritubular dentin.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.