• 연구논문집
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• s.31
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• pp.113-125
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• 2001

Silicon addition in titanium alloys generally results in solid solution hardening by silicon itself and precipitation hardening by titanium silicides. The morphology and distribution of the titanium silicides depend upon the alloy chemistry or the heat treatment condition, and play an important role in improving the mechanical properties of the alloys. In this study, the morphology and crystallographic characteristics of the titanium silicides in the Ti-Fe-Si alloy system were studied. Three types of silicides were found in the alloys; (1) interconnected chain-like silicides at grain boundary, (2) coarse silicides over im, (3) fine silicides smaller than 0.2m. Ti3Si was dominant in cast + HIP condition while Ti5Si3 was dominant in as-cast state. It is recognized that $Ti_5Si_3$$\rightarrow$$Ti_3Si$ transition occurred by the peritectoid reaction and it may be promoted by the pressure during HIP. However, in the case of the fine silicides, $Ti_3Si$ and $Ti_5Si_3$ were found simultaneously even after HIP. Such a fine silicide was found to have a crystallographic orientation relationship with matrix.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.11
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• pp.105-111
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• 1996

We have invetigated the characteristics of thermal instability of Co-silicides annealed at 850$^{\circ}$C ~ 1000$^{\circ}$C for 10~90 minutes in a furance with N$_{2}$ ambient. In our experiments, Co-silicides and Co/Ti bilayer silicides were formed by depositing (Co, Ti) films on the clean Si substrates in an E-beam evaporator and performing the RTA annelaing. The sheet resistances of Co-silicides formed form Co exhibited the nearly constant value under the post-annealing time above 900$^{\circ}$C showing the increase of 30% and 60% under the conditions annealed at 900$^{\circ}$C and 1000$^{\circ}$C for 30minutes. On the other hand, there were no remarkable changes in the sheet resistance sof Co-silicides formed form Co/Ti bilayer under the post-annealing conditons below 1000$^{\circ}$C.

• Journal of the Korean institute of surface engineering
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• v.32 no.6
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• pp.703-708
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• 1999

Silicides have been used extensively in ULSI logic device fabrication as contact materials for the active areas as well as the poly- Si gates. NiSi is a promising candidate for submicron device application due to less volume expansion, low formation temperature, little silicon consumption, and large stable processing temperature window. In this report, the microstructure of nickel silicides fabricated with a thermal evaporator has been investigated. We observed systematic transformation of Ni silicides of $Ni_2$Si, NiSi, $NiSi_2$, as annealing temperature increases. All the silicides have been identified by a X-ray diffractometer (XRD). The cross-sectional microstructure of silicides was examined by a transmission electron microscope (TEM) equipped with a energy dispersive spectrometer(EDS). The surface roughness of silicides was measured by scanning probe microscope(SPM). Although we observed thin oxide layer existed at the $Ni/NiSi_{x}$ interface, we fabricated successfully $550\AA$-thick planar Ni-monosilicide at the temperature range of$ 400~700^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.12
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• pp.1852-1858
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• 1990

The sheet resistance and thickness of Ti-Silicides treated RTA at 600, 700, 800\ulcorner was measured with amount of BF2 implanted in Si substrate. And the profile of BF2 was studied by SIMS. The formation of TiSi2 starts at 700\ulcorner. The Ti-Silicides almost consist of TiSi2 and have a low resistivity about 16列 cm at 800\ulcorner. The sheet resistances of Ti-silicides increase and thicknesses of it decrease with increasing dose of BF2. Considering the results of SIMS and the thickness of native oxide, the decrease of thickness of Silicides chiefly results from the increase of native oxide thickness with increasing dopants.

• Journal of Powder Materials
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• v.4 no.4
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• pp.283-290
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• 1997

$Ti_5Si_3$ intermetallics containing 0-6 wt% of Cu were made by reactive sintering (RS) under vacuum using elemental powder mixtures (Process 1), electro-pressure sintering (EPS) using RS'ed materials (Process2), and EPS using elemental powder mixtures (Process 3). Relatively low dense titanium silicides were gained by process 1, in which porosity decreased with increasing Cu content. For example, porosity changed from 42 to 19.4% with the increase in Cu content from 0 to 6 wt%, indicating that Cu is a useful sintering aid. The titanium silicides fabricated by Process 2 had a higher density than those by Process 1 at given composition, and porosity decreased with increasing Cu content. For example, porosity decreased from 38 to 6.8% with the change in Cu content from 0 to 6 wt%. A high dense titanium silicides were obtained by Process 3. In this Process, porosity decreased a little by Cu addition, and was almost insensitive to Cu content. Namely, about 9 or 7% of porosity was shown in 0 or 1-6 wt% Cu containing silicides, respectively. The hardeness increased by Cu addition, and was not changed markedly with Cu content for the silicides fabricated by Process 3. This tendency was considered to be resulted from porosity, hardening of grain interior by Cu addition, and softening of grain boundary by Cu-base segregates. All these results suggested that EPS using elemental powder mixtures (Process 3) is an effective processing method to achieve satisfactorily dense titanium silicides.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.323-330
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• 2007

We fabricated thermaly evaporated 10 nmNi/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated $10{\sim}50$ nm-thick ITO/Si films with a rf-sputter as reference films. A four-point tester was used to investigate the sheet resistance. A transmission electron microscope (TEM) and an X-ray diffractometer were used for the determination of cross sectional microstructure and phase changes. A UV-VISNIR and FT-IR (Fourier transform infrared rays spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed $20{\sim}70nm-thick$ silicide layers formed on the single and polycrystalline silicon substrates. Nickel silicides and ITO films on the single silicon substrates showed almost similar absorbance in near-IR region, while nickel silicides on polycrystalline silicon substrate showed superior absorbance above 850 nm near-IR region to ITO films. Nickel silicide on polycrystalline substrate also showed better absorbance in middle IR region than ITO. Our result implies that nano-thick nickel silicides may have exellent absorbing capacity in near-IR and middle-IR region.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.57-62
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• 1989

Sputter-deposited Ti film on Si substrates which were implanted with various doses of As was annealed at the temperature of 600-900$^{circ}C$ for 20 sec in Ar atmosphere. The sheet resistance of Ti-silicides was measured by 4-point probe, the thickness by $alpha$-step, and observed the behavior of As dopant in Si substrates by ASR. With increasing As doses, the thickness of Ti-silicides decreased and the sheet resistance of Ti-silicides increased. And we discussed the relationships between the above results and the factors of Si diffusion.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.319-323
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• 1988

For finding the effects of As on $TiSi_2$ formation, sputter deposited Ti film on Si substrates implanted with various doses of As have been rapid thermal annealed in Ar atmosphere at temperatures of 600-900$^{\circ}C$ for 20 sec. The sheet resistance of Ti-Silicides was examined with 4-point probe, the thickness with ${\alpha}$-step, and the As dopant behavior in Si substrates with ASR. The thickness of Ti-Silicides decreased with increasing As doping, but Ti-Silicides sheet resistance increased with increasing it. However, the critical concentration effect reported by Park et al. was not observed. We observed that the thickness of native oxide increase with increasing As doping. Thus, we concluded that native oxide act as a "barrier" for the Si diffusion.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.401-405
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• 2016

The cobalt silicides were investigated for employment as a catalytic layer for a DSSC. Using an E-gun evaporation process, we prepared a sample of 100 nm-thick cobalt on a p-type Si (100) wafer. To form cobalt silicides, the samples were annealed at temperatures of $300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 30 minutes in a vacuum. Four-point probe, XRD, FE-SEM, and CV analyses were used to determine the sheet resistance, phase, microstructure, and catalytic activity of the cobalt silicides. To confirm the corrosion stability, we also checked the microstructure change of the cobalt silicides after dipping into iodide electrolyte. Through the sheet resistance and XRD results, we determined that $Co_2Si$, CoSi, and $CoSi_2$ were formed successfully by annealing at $300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$, respectively. The microstructure analysis results showed that all the cobalt silicides were formed uniformly, and CoSi and $CoSi_2$ layers were very stable even after dipping in the iodide electrolyte. The CV result showed that CoSi and $CoSi_2$ exhibit catalytic activities 67 % and 54 % that of Pt. Our results for $Co_2Si$, CoSi, and $CoSi_2$ revealed that CoSi and $CoSi_2$ could be employed as catalyst for a DSSC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.308-317
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/(poly)Si and 10 nm-$Ni_{0.5}Co_{0.5}$/(Poly)Si structures to investigate the microstructure of nickel silicides at the elevated temperatures required lot annealing. Silicides underwent rapid annealing at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profilescope were employed for the determination of vortical microstructure and thickness. Nickel silicides with cobalt on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1100^{\circ}C$ and $900^{\circ}C$, respectively, while the conventional nickle monosilicide showed low resistance below $700^{\circ}C$. Through TEM analysis, we confirmed that a uniform, $10{\sim}15 nm$-thick silicide layer formed on the single-crystal silicon substrate for the Co-alloyed case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo-alloy composite silicide process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.