• Electrical & Electronic Materials
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• v.16 no.9
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.611-619
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• 1994

The formation of , $\beta$-quartz solid solution in the $LiO_2-Al_2O_3-SiO_2$glasses containing $TiO_{2}$ and $ZrO_{2}$ as nucleating agents was investigated for various temperatures and times. Linear thermal expansion coefficients of base glasses and crystallized glasses were $45\sim 55 \times 10^{-7} \textrm{cm}/^{\circ}C$ and $ -8\sim +8 \times 10^{-7}\textrm{cm}/^{\circ}C$ ($25^{\circ}C \sim 525^{\circ}C$), respectively. The crystal phase formed by heat-treatment below $900^{\circ}C$was , $\beta$--quartz solid solution, and the crystal sizes were less than 0.21m. On the other hand, the crystal size of the base glasses containing 3.5 wt% MgO is relatively uniform and is independent with temperature. The specimen containing 3.5 wt% ZnO shows a minimum crystal size(O.l8$\mu \textrm{m}$), and it strongly depends on temperature of heat-treatment.

• Journal of Korean Society of Environmental Engineers
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• v.29 no.7
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• pp.810-819
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• 2007

Investigation of alkali activation of fly ash and blast furnace slag was carried out using waterglass and sodium hydroxide. XRD, FTIR, $^{29}Si$ and $^{27}Al$ NMR, TGA and SEM were used to observed the reaction products and microstructure of the fly ash/slag cement (FSC) pastes. The reaction products were amorphous or low-ordered calcium silicate hydrate and aluminosilicate gel produced from alkali activation of blast furnace slag and fly ash, respectively. On the basis of this investigation, waterglass solution with a modulus(Ms) of 1.0 and 1.2 is recommended for alkali activation of fly ash and blast furnace slag. Morphology of FSC pastes alkali-activated with Ms of 1.0 and 1.2 shows a more solid and continuous matrix due to restructuring of gel-like reaction products from alkali-activated fly ash and blast furnace slag together with another hydrolysis product(i.e., silica gel) from water glass.

• Polymer(Korea)
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• v.31 no.6
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• pp.485-490
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• 2007

Hard coating was made on a polycarbonate plate using a sol-gel process with a melamine derivative and silicates, and examined as potential substitutes for automobile glass. Methylated poly(melamine-co-formaldehyde), tetraethoxysilane, and phenyltriethoxysilane were used to form a coating solution. The coatings on the polycarbonate plate were deposited using a sol-gel process. Poly(methyl methacrylate) was coated on the surface of polycarbonate in order to improve adhesion property. The optimum conditions and formulation to obtain excellent physical properties of the coating were determined. Adding the melamine derivative to the coating solution, the pencil hardness of the coating was improved. The hardness of a 3H class pencil, excellent abrasion resistance, and surface uniformity were found in the coated polycarbonate surface.

• Applied Chemistry for Engineering
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• v.31 no.6
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• pp.635-638
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• 2020

We prepared spherical silica by minimizing the amount of oil through water/oil (W/O) emulsion. The spherical silica was successfully synthesized by using 20 to 60 mL of hexane as an oil for 283 g of water glass. The size of silica was dependent on the amount of oil where the size of silica particles increased as the amount of oil increased. The specific surface areas of samples measured using the BET method were 186 to 230 ㎡/g. X-ray fluorescence (XRF) analysis results showed that the SiO2 content was more than 90% while sodium was 3.27~4.5 wt. %. The spherical silica prepared in this study could be optimized for mass synthesis and commercialization because the industrial sodium silicate solution was used as a precursor of Si as well as the minimum amounts of hexane and nonionic surfactant were employed.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.238-244
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• 2013

Doping process using laser is an important process in fabrication of solar cell for heat treatment. However, the process of using the furnace is difficult to form a selective emitter doping region. The case of using a selective emitter laser doping is required an expensive laser equipment and induce the wafer's structure damage due to high temperature. This study, we fabricated a new costly plasma source. Through this, we research the selective emitter doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (a few tens kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer. Atmospheric plasma treatment time was 15 s and 30 s, and current for making the plasma is 40 mA and 70 mA. We investigated a doping profile by using SIMS (Secondary Ion Mass Spectroscopy) and we grasp the sheet resistance of electrical character by using doping profile. As result of experiment, prolonged doping process time and highly plasma current occur a deeper doping depth, moreover improve sheet resistance. We grasped the wafer's surface damage after atmospheric pressure plasma doping by using SEM (Scanning Electron Microscopy). We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.12-18
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• 1993

Abstract The effect of the film stress on the thermal stability of TiSi, films under the dielectric overcoat was investigated. TiS$i_2$ films with the sheet resistance of 1.2 ohm/sq. were produced by a solid-state reaction between sputtered Ti film and single-crystalline Si in an RTA (rapid thermal anneal) machine. Dielectric overcoats such as the USG (Undoped Silicate Glass, Si$O_2$) film and the PE-SiN(S$i_3$$N_4$) film were deposited by AP-CVD and PE-CVD, respectively, on the TiS$i_2$ film. The thermal stability of the TiSi, film was evaluated by changes in the sheet resistance, film stress and microstructure after furnace anneals at 90$0^{\circ}C$. Agglomeration of the TiSi2 film high temperatures results in the increase of sheet resistance and the decrease of tensile stress of TiSi, film. The stress level of the TiSi" PE-SiN and ~SG films at 90$0^{\circ}C$C was 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$ in tensile, respectively. Dielectric films deposited by CVD on TiSi, was effective on preventing agglomeration of TiSi,. The PE-SiN film mproved the thermal stability of TiSi, more effectively than the AP-CVD USG film. It is considered that agglomeration of the TiS$i_2$ film under the stress of dielectric overcoat at high temperature can be caused by a diffusional flow of atom called Nabarro-Herring microcreep.reep.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.7 no.2
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• pp.209-222
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• 1997

Authors surveyed the ground water near the waste disposed from a fiberglass production factory to confirm the presence of glassfiber in the water and to determine the effect of sampling conditions and storage on the recovery of fibrous materials in the ground water. Sample was collected at every 4 hours for 48 hours consecutively. After finishing the 48 hours sample, water sampling was done from each tap after repeated turning on and off the water for 30 seconds at each time. Sample was collected in the two 1.5 liter polyethylene bottle after vigorously shaking the bottle with the same water several times with the flowing tap water. At each paired sample, one bottle was stored stand still at room temperature, and the other sample was filtered immediately after sampling. Water was filtered on the Mixed Cellulose Ester filter with negative pressure. Each sample was divided into upper and lower layer. The other bottle was stored at room temperature standstill for 7 days and filtered in the same fashion as the other pair of sample did. Each MCE filter was divided into 4 pieces and one piece was treated with acetone to make it transparent. Each prepared sample was observed by two researchers under the light and polarizing microscopy, scanning electron microscopy and energy dispersive X-ra microanalysis. Fibers were classified by the morphology and polarizing pattern under the polarizing microscope, and count was done. 1. There was a significant fluctuation in number of the fibers, but there was no specific demonstrable pattern. 2. Non-polarizing fibers frequently disappeared after 7 days's storage. But cluster of fibers were found at the wall of the same container by scratching technique. 3. Polarizing fibers were usually found in between the filter and the manicure pasted area. Possible explanations for this phenomenon will be that either these fibers are very light or have electronic polarity. Hence, these fibers are not able to be attached on the surface of slide glass. 4. Under the scanning electron microscopic examination, the fibers which are not refractive under the light microscopy were identified as glassfiber. Other fibers which is refractive under the polarizing microscopy were identified as magnesium silicate fibers. It is strongly suggested that development of standardized method of sample collection and measurement of fibrous material in the water is needed.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.46-53
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• 1991

The stress of PSG (Phosphosilicate glass), USG (Undoped-silicate grass) and SiN films, which are mainly used as passivation layers in semiconductor memory devices, deposited by CVD methods has been studied as a function of film thickness and holding time in air. The stress of the PSG film or the USG film is increased in tensile state with increasing film thickness. On the other hand the stress level of the SiN film in compressive stress does not change as film thickness changes. The stress of PSG film shows the drastic change from the tensile stress to the compressive stress after the film is left 2 days in air. FTIR spectra indicated that the stress variation was due to the penetration of water molecule. It looks possible to recover the stress of about $2.5{\times}{10^9}dyne/cm^2$ by annealing treatment at $300^{\circ}C$ for 20min. The total stress of multi-layered films having the PSG film is determined mainly by the stress variation of PSG layer with holding time. The total stress of multi-layered film appears to have a functional relationship with the stress in the thickness of each film. The resistance against stress-migration of sputtered Al line increases with increasing the tensile stress for the PSG film or the USG film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.123-129
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• 2018

Ink-jet printing technology with ceramic ink of the four digital primary colors (cyan, magenta, yellow, and black; CMYK) can provide stable coloration even in the high-temperature firing process. Ceramic ink-jet printing can be widely applied in construction and ceramic industries due to the advantages of accurate and fast printing process of digital images for various products. Generally, organic solvent with proper viscosity and surface tension has been used in digital ink-jet printing process. However, the needs of ceramic ink without VOCs emission is increasing. In the present study, eco-friendly ceramic ink was synthesized by combining alumino boro-silicate glass frit and $CoAl_2O_4$ inorganic pigment based on an aqueous solvent that does not generate VOCs. The rheological properties and dispersion stability of aqueous ceramic ink were optimized. Jetting behavior and printing characteristics of the ceramic ink were also investigated in detail. As a result, the formulated aqueous ceramic complex ink showed a suitable jetting behavior without satellite drop by adjusting viscosity and surface tension. The ceramic ink can be printed on glass substrate with minimized spreading phenomena duo to high contact angle.