• 제목/요약/키워드: Silica film

검색결과 286건 처리시간 0.024초

포도의 Chlorine Dioxide Gas 훈증처리 및 저장방법에 관한 연구 (Effects of Chlorine dioxide ($ClO_{2}$) Gas Treatment on Postharvest Quality of Grapes)

  • 장은하;정대성;최종욱
    • 한국식품저장유통학회지
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    • 제14권1호
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    • pp.1-7
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    • 2007
  • 농산물의 미생물학적 안전성에 대한 요구가 증대되면서 미생물에 의한 농산물의 오염 및 균의 발생을 최소화하기 위해 이산화염소($ClO_{2}$) 가스를 이용한 포도저장 실험을 수행하였다. 실험 결과 중량감소율은 상온, 저온저장 모두 20 ppm+Ny/PE/L-LDPE 처리구가 가장 적었고 가용성 고형물 함량은 상온, 저온저장 모두 무처리구가 다른 포장구에 비해 높은 값을 나타내었으며 20 ppm+Ny/PE/L-LDPE 처리구는 감소했다. 적정산도 값은 상온, 저온저장 중 모든 포장구에서 감소하는 경향을 나타내었으며 Anthocyanin 함량은 상온저장에서는 모든 포장구에서 저장 14일까지 증가하다가 저장 21일에 급격히 감소했으며 저온저장에서는 저장 10주까지 모든 포장구간이 초기보다 증가하는 경향을 나타내었다. 총균수 값은 상온저장 시 $ClO_{2}$ gas처리 및 silica gel pad 처리구가 총균수 억제효과를 나타내었고 저온저장에서는 $ClO_{2}$ gas를 처리한 20 ppm+Ny/PE/L-LDPE와 40 ppm포장구에서 총균수 억제효과를 나타내어 저온보다 상온에서 $ClO_{2}$ gas의 효과가 더 크게 작용하는 것으로 나타났다.

졸겔법과 자가조립법을 통해 제조된 메조포러스 $SiO_2$ 박막의 트라이볼로지 특성 (The Tribological Behaviors of Mesoporous $SiO_2$ Thin Film Formed by Sol-Gel and Self-Assembly Method)

  • 이영제;신윤하;김지훈;김지만;김태성
    • Tribology and Lubricants
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    • 제23권6호
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    • pp.298-300
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    • 2007
  • Frictional characteristics of mesoporous $SiO_2$ thin films were evaluated with different pore sizes. The films were manufactured by sol-gel and self-assembly methods to have a porous structure. The pores on the surface may play as the outlet of wear particle and the storage of lubricant so that the surface interactions could be improved. The pores were exposed on the surface by chemical mechanical polishing (CMP) or plasma-etching after forming the porous films. The ball-on-disk tests with mesoporous $SiO_2$ thin films on glass specimen were conducted at sliding speed of 15 rpm and a load of 0.26 N. The results show considerable dependency of friction on pore size of mesoporous $SiO_2$ thin films. The friction coefficient decreased as increasing the pore size. CMP process was very useful to expose the pores on the surface.

실리콘 나노리본을 이용한 유연한 패시브 매트릭스 소자 제작 (Fabrication of Flexible Passive Matrix by Using Silicon Nano-ribbon)

  • 신건철;하정숙
    • Korean Chemical Engineering Research
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    • 제49권3호
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    • pp.338-341
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    • 2011
  • 대표적인 반도체 소재인 실리콘을 유연소자로 이용하기 위하여 매우 얇은 나노리본 형태로 제작하였다. p-타입과 n-타입 도핑 그리고 고유한 영역으로 구성된 실리콘 소자(p-i-n 접합소자)를 가로/세로 100라인씩 연결하여 총 10,000개의 어레이 소자를 구현하였고 그 크기는 대각선 1인치에 달했다. 이 패시브 매트릭스 소자는 p-n 접합 소자에 비해 교차 혼선에 의한 역전류가 적어 정류비가 $10_{4}$ 이상의 값을 나타내었다. 완성된 소자는 불산 처리를 통해 기판으로부터 쉽게 떼어낼 수 있으며, 각각 PDMS 와 유연한 PET 필름에 전이할 수 있었다.

졸-겔법에 의한 SiO2-Tio2계 박막의 내후성 (The Weathering Resistance of Sol-Gel Derived Anti-Reflective SiO2-Tio2 Thin Films)

  • 김상문;임용무;황규석
    • 한국안광학회지
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    • 제3권1호
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    • pp.237-242
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    • 1998
  • $80SiO_2-20TiO_2$(mol%)의 무색투명한 비정질 박막을 현미경용 슬라이드 유리판과 사파이어 위에 tetraethyl orthosilicate와 titanium trichloride의 전구체 용액을 사용하여 스핀코팅방법으로 제조하였다. 코팅 후 $750^{\circ}C$에서 열처리된 박막은 높은 투과율과 낮은 반사율을 보였다. 슬라이드 유리판에 코팅한 $SiO_2-TiO_2$ 박막의 경우에 나트륨이온과 산소 간의 강한 상호작용에 의하여 고온과 높은 습도에서도 안정성이 우수하였다.

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Nanoscale Probing of Switching Behaviors of Pt Nanodisk on STO Substrates with Conductive Atomic Force Microscopy

  • Lee, Hyunsoo;Kim, Haeri;Van, Trong Nghia;Kim, Dong Wook;Park, Jeong Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.597-597
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    • 2013
  • The resistive switching behaviors of Pt nanodisk on Nb-doped SrTiO3 single-crystal have been studied with conductive atomic force microscopy in ultra-high vacuum. The nanometer sizes of Pt disks were formed by using self-assembled patterns of silica nanospheres on Nb-doped SrTiO3 single-crystal semiconductor film using the Langmuir-Blodgett, followed by the metal deposition with e-beam evaporation. The conductance images shows the spatial mapping of the current flowing from the TiN coated AFM probe to Pt nanodisk surface on Nb:STO single-crystal substrate, that was simultaneously obtained with topography. The bipolar resistive switching behaviors of Pt nanodisk on Nb:STO single-crystal junctions was observed. By measuring the current-voltage spectroscopy after the forming process, we found that switching behavior depends on the charging and discharging of interface trap state that exhibit the high resistive state (HRS) and low resistive state (LRS), respectively. The results suggest that the bipolar resistive switching of Pt/Nb:STO single-crystal junctions can be performed without the electrochemical redox reaction between tip and sample with the potential application of nanometer scale resistive switching devices.

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졸겔법으로 제조된 SBN박막의 특성연구 (Characteristics of SBN Thin Films Prepared by Sol-Gel Process)

  • 이동근;김태중;이해욱;이희영;김정주;조상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.1030-1035
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    • 2001
  • Strontium barium niobate, (Sr$\sub$0.5/Ba$\sub$0.5/Nb$_2$O$\sub$6/), thin films of various composition were prepared by the sol-gel method. Solution derived from acetate powders and niobium ethoxide in a mixture of acetic acid, ethylene glycol and 2-methoxyehanol was spin-coated onto bare silicon, Pt-coated silicon and fused silica substrates. Processing parameters were optimized to develop stable solutions which yielded films with relatively low crystallization temperatures. It was determined that ethylene glycol was a necessary component of the solution to increase stability against precipitation and to decrease the crystallization temperature of the films as confirmed by XRD and FT-IR analyses.

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Roles of Phosphoric Acid in Slurry for Cu and TaN CMP

  • Kim, Sang-Yong;Lim, Jong-Heun;Yu, Chong-Hee;Kim, Nam-Hoon;Chang, Eui-Goo
    • Transactions on Electrical and Electronic Materials
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    • 제4권2호
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    • pp.1-4
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    • 2003
  • The purpose of this study was to investigate the characteristics of slurry including phosphoric acid for chemical-mechanical planarization of copper and tantalum nitride. In general, the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizing agent, a film forming agent, a pH control agent and additives. Hydrogen peroxide (H$_2$O$_2$) is the material that is used as an oxidizing agent in copper CMP. But, the hydrogen peroxide needs some stabilizers to prevent decomposition. We evaluated phosphoric acid (H$_3$PO$_4$) as a stabilizer of the hydrogen peroxide as well as an accelerator of the tantalum nitride CMP process. We also estimated dispersion stability and zeta potential of the abrasive with the contents of phosphoric acid. An acceleration of the tantalum nitride CMP was verified through the electrochemical test. This approach may be useful for the development of the 2$\^$nd/ step copper CMP slurry and hydrogen peroxide stability.

실리콘알콕사이드의 합성기술과 응용 (Preparation and Application of Silicon alkoxide)

  • 노재성;양현수;조헌영;조태웅
    • 공업화학
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    • 제4권2호
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    • pp.240-253
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    • 1993
  • 실리콘알콕사이드는 실리카섬유와 박막재료 및 각종 세라믹스의 합성원료로써 필수적인 물질이 되었으며, 최근에는 16MD램 이상의 초고도 전자제품의 VLSI용 박막 원료로 각광을 받게 되면서 그 중요성이 더한층 강조되고 있다. 따라서 본 본문에서는 실리콘알콕사이드의 각종 합성방법과 반응기구 및 응용분야 등을 요약 정리하고, 실리콘알콕사이드 합성에 관한 본 연구팀의 연구결과 및 문제점을 간략하게 소개하였다.

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식품중(食品中) 유독성(有毒性) 대사산물(代謝産物)에 관(關)하여(제(第) 1 보(報)) 수종(數種)의 한국(韓國) 대두발효식품중(大豆醱酵食品中)에 Aflatoxin 유무(有無)의 검색(檢索)에 관(關)하여 (Studies on Toxic Metabolites Occurring in Foods(I) Screen test of Aflatoxin in Some Korean Fermented Soybean Foods)

  • 이태영;이상규
    • 한국식품과학회지
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    • 제1권1호
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    • pp.78-84
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    • 1969
  • An attempt has been made to investigate the possible occurrence of aflatoxins, a group of micotoxin which are toxic metabolites produced by Aspergillus flavus, and aflatoxin like substances in fungal fermented soybean products such as meju and soybean paste. Chloroform extracts from 15 samples which has been defated with petroleum ether are subjected to separations with thin-layer chromatography on silica gel washed with methanol prior to film coating, improves the chromatographic separation and ultraviolet absorption spectral identification. In addition to fluorescencing spot having an Rf value which is same as aflatoxin $B_1$, many of the fluorescencing spots have been occurred in every sample examined. Each fluorescencing spot is scratched and the ethanol extracts are subjected to further separation with thin-layer chromatography. Each fluorescence substance is eluted with ultra violet transparent absolute ethanol and the ultraviolet absorption spectra are checked. None of the absorption curve of eluates shsow accordance with the curve of aflatoxin. 2, 4-Dinitrophenyl hydrazine reagent, Tollen's reagent and ninhydrin reagent are applied on the chromatogram- The data show that aflatoxin is not present in any of the fungal preparations examined.

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카드뮴 텔룰라이드 CMP 공정에서 산화제가 연마에 미치는 영향 (Effect of Oxidizer on the Polishing in Cadmium Telluride CMP)

  • 신병철;이창석;정해도
    • 한국정밀공학회지
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    • 제32권1호
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    • pp.69-74
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    • 2015
  • Cadmium telluride (CdTe) is being developed for thin film of the X-Ray detector recently. But a rough surface of the CdTe should be improved for resolution and signal speed. This paper shows the study on the improvement of surface roughness and removal rate by applying Chemical Mechanical Polishing. The conventional potassium hydroxide (KOH) based colloidal silica slurry could not realize a mirror surface without physical defects, resulting in low material removal rate and many scratches on surface. In order to enhance chemical reaction such as form oxidized layer on the surface of cadmium telluride, we used hydrogen peroxide ($H_2O_2$) as an oxidizer. Consequently, in case of 3 wt% concentration of hydrogen peroxide, the highest MRR (938 nm/min) and the lowest surface roughness ($R_{p-v}=10.69nm$, $R_a=0.8nm$) could be obtained. EDS was also used to confirm the generated oxide of cadmium telluride surface.