• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.705-711
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• 2000

A thin film oxide semiconductor micro gas sensor array which shows only 60 mW of power consumption at an operating temperature of $300^{\circ}C$ has been fabricated using microfabrication and micromachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double-layer structure of $0.1\mum\; thick\; Si_3N_4 \;and\; 1 \mum$ thick phosphosilicate glass (PSG) prepared by low-pressure chemical-vapor deposition (LPCVD) and atmospheric-pressure chemical-vapor deposition (APCVD), respectively. The sensor array consists of such thin film oxide semiconductor sensing materials as 1 wt.% Pd-doped $SnO_2,\; 6 wt.% A1_2O_3-doped\; ZnO,\; WO_3$/ and ZnO. Baseline resistances of the four sensing materials were found to be stable after the aging for three days at $300^{\circ}C$. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.25-30
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• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.43-47
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• 2014

NiO-doped hibonite pigments were synthesized by the solid state method to get stabilized blue color pigment in both oxidation and reduction atmospheres. Optimum substitution condition with NiO for hibonite blue pigment was investigated. Experimental results were comparable to those of previous cobalt-minimization studies performed with other phosphate- or oxide-based cobalt-containing ceramic pigments (having olivine ($Co_2SiO_4$), spinel ($CoAl_2O_4$), or with co-doped willemite ($(Co,Zn)_2SiO_4$) structures). Composition was designed varying the NiO molar ratio increasing with $SnO_2$. The optimum substitution content is 0.93 mole NiO with 0.75mole $SnO_2$. The characteristics of the synthesized pigment were analyzed by XRD, Raman spectroscopy, SEM, and UV-vis. Synthesized pigment was applied to a lime-barium glaze with 10 wt% each and fired at an oxidation atmosphere of $1250^{\circ}C/1h$ and a reducing atmosphere $1240^{\circ}C/1h$. Blue color was obtained with $L^*a^*b^*$ values at 43.39, -6.78, -18.20 under a reducing atmosphere and 41.66, -6.36, -14.7 under and oxidation atmosphere, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.387-387
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• 2007

기능성 나노소자를 구현할 수 있는 나노 소재로 0차원 구조의 양자점(quantum dot)과 1차원 구조의 양자선 및 나노선(nanorod)이 제안되고 있다. 나노선의 경우 나노스케일의 dimension, 앙자 제한 효과, 탁월한 결정성, self-assembly, internal stress등 기존의 벌크형 소재에서 발견할 수 없는 새로운 기능성이 나타나고 있어서 바이오, 에너지, 구조, 전자, 센서 등의 분야에서 활용되고 있다. 현재 국내외적으로 널리 연구되고 있는 나노선으로는 Si 및 Ge, $SnO_2$, SiC, ZnO 등이 있으며 특히, ZnO는 우수한 물리적 전기적 특성과 함께 나노선으로의 합성이 비교적 쉬워 주목받고 있는 재료이다. ZnO의 합성방법으로는 thermal CVD, MOCVD, PLD, wet-chemistry 등 다양한 방법이 사용되고 있다. 특히 MOCVD 법은 수직 정렬된 ZnO 나노막대를 합성하기가 매우 용이하다. 본 실험에서는 자체개발된 MOCVD 장비를 이용한 일차원 ZnO 나노선을 성장하였다. 이러한 ZnO 나노선의 성장은 사파이어 기판과 실리콘 기판 위에서 이루어졌으며 기판의 종류와 격자상수 불일도에 따른 상이한 성장과정을 온도에 따른 나노선 성장에서 관찰할 수 있었다. 사파이어 기판의 경우, 240도의 온도에서는 박막형상을 지닌 ZnO가 온도가 320도 이상으로 상승하면서 나노선으로 변함을 보였고, 실리콘 기판의 경우 380도 이상에서 기울기률 가진 나노선을 관찰하였으며, 420도에서는 나노선을 관찰 할 수 없었다. 또한 PL 장비를 이용한 PL 강도와 성장과정을 연관하여 생각하였을 때, 나노선의 기물기가 PL 강도비과 연관성을 가진다는 것을 측정을 통해 확인하였다.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.9-15
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• 2008

Various diatomic inorganic films and their composite films are packed as passivation films covering Ca cells on glass substrates by using an electron-beam evaporation technique. When these Ca cells are exposed to an ambient atmosphere, the water vapor penetrating through the passivation layers is absorbed in the Ca cells, resulting in a gradual progress of transparency in the Ca cells, which can be represented by changes of the optical transmittance in the visible range. Compared with the saturation times for the Ca cells to become completely transparent in the atmosphere, the protection effects of water vapor are estimated for various passivation films. The composite films consisting silicon oxide($SiO_2$) and tin oxide($SnO_2$) or zinc oxide(ZnO) are found to show a superior protection effect of water vapor as compared with diatomic inorganic films. Also, the main factors affecting the permeation of water vapor through the oxide films are found to be the polarizability and the packing density.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.79-79
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• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• Korean Journal of Materials Research
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• v.7 no.8
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• pp.660-667
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• 1997

AI-Mg-합금의 용융산화에 의해 생성되는 AlO$_{2}$O$_{3}$-복합재료의 미세구조에 미치는 합금원소의 영향을 연구하였다. AI-1Mg 합금과 AI-3Mg 합금을 기본으로하여 Si, Zn, Sn, Cu, Ni, Ca, Ce를 1, 3, 5 %를 무게비로 첨가하였다. 각 합금을 1473K에서 20시간 유지하여 산화시킨 후 산화층의 거시적 형상과 미세구조를 광학현미경으로 관찰하였다. 각 미세구조의 상분율을 상분석기로 측정하였다. 산화층의 최첨단면은 SEM과 EDX로 관찰하고 분석하였다. Cu나 Ni를 첨가한 합금으로부터 성장한 산화층의 미세구조가 가장 치밀하였다. Zn이 포함된 합금으로부터 성장한 산화층 최첨단 성장면에는 ZnO가 관찰되었다. Zn이 포함되지 않은 다른 합금의 성장 전면에는 항상 MgAi$_{2}$O$_{4}$상이 관찰되었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.4.2-4.2
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• 2009

산화아연 (ZnO)으로 대표되는 산화물반도체는 최근 다양한 비정질 산화물반도체들이 개발되고 있고 높은 이동도와 저온공정 등의 장점으로, 실리콘 기반 박막소자 (비정질-Si, 또는 다결정-Si(LTPS) 트랜지스터)를 대체할 차세대 박막 트랜지스터 (Thin-Film Transistor)의 핵심소재로 관심을 모으고 있다. 또한, 산화물 반도체는 근본적으로 투명하므로, 투명 전극 및 투명 기판재료와 함께 투명 디스플레이도 구현시킬 수 있을 것이다. 그렇지만, 핵심 전자소재로서 향후 디스플레이 및 디바이스에 성공적으로 적용되기 위해서는 소자의 특성 뿐만아니라, 전기적 신뢰성(reliability)을 강화시킬 필요가 있다. 본 발표에서는 In-Ga-Zn-oxide (IGZO), Zn-Sn-oxide (ZTO), Zn-In-Sn-oxide (ZITO) 및 도핑원소를 첨가한 소재에 이르기까지 다양한 산화물 반도체 소재 기술과 소자의 신뢰성 향상을 위한 기술 등을 소개할 것이다.