• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.34.2-34.2
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• 2009

The ceramic coatings on metallic materials have attracted by many researchers due to the chemical inertness of ceramic materials. In such aspect, SiOC is a promising material tobe used as protective coating layer on metallic materials due to its outstanding thermal stability and chemical inertness. In this research, SiOC coating was carried out onto SuS-316 substrate using Cl free preceramic polymers such aspolyphenylcarbosilane. 20% of polymethylphenylsilane in cyclohexane solution was coated onto metal surface by dip coating method. Thermal oxidation was carried out at $200^{\circ}C$ for crosslink of the preceramic polymer and the sample was pyrolysized at $800^{\circ}C$ under argon to convert the preceramic polymer to amorphous SiOCx state. The microstructure of the SiOCx film after pyrolysis was investigated using FE-SEM. Corrosion resistance of SiOC coated SuS-316 substrate has been investigated using 5% HCl solution at 25, 40, 60 and $80^{\circ}C$ for 7days. The data revealed that the corrosion resistance increased with SiOC coating on SuS-316 substrate.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.8-14
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• 2011

To improve the chemical stability of metal, the ceramic coatings on metallic materials have attracted interest from many researchers due to the chemical inertness of ceramic materials. To endure strong acids, SiOC coating on metal substrate was carried out by dip coating method using 20wt% polyphenylcarbosilane solution; SiC powder was added to the solution at 10wt% and 15wt% to improve the mechanical properties and to prevent cracks of the film. Thermal oxidation as a curing step was carried out at $200^{\circ}C$ for crosslinking of the polyphenylcarbosilane, and the coating samples were pyrolysized at $800^{\circ}C$ under argon to convert the polyphenylcarbosilane to SiOC film. The thicknesses of the SiOC coating films were $2.36{\mu}m$ and $3.16{\mu}m$. The quantities of each element were measured as $SiO_{1.07}C_{6.33}$ by EPMA, and it can be confirmed that the SiOC film from polyphenylcarbosilane was formed in a manner that was carbon rich. The hardness of the SiOC film was found to be 3.2Gpa through nanoindentor measurement. No defect including cracks appeared in the SiOC film. The weight loss of the SiOC coated stainless steel was within 2% after soaking in 10% HCl solution at $80^{\circ}C$ for one week. From these results, SiOC coating shows good potential for application to protect against severe chemical corrosion of stainless steel.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.36.2-36.2
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• 2009

Low dielectric materials have been great attention in the semiconductor industry to develop high performance interlayer dielectrics with low k for Cu interconnect technology. In our study, the dielectric properties of SiOC /SiO2 thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. Polyphenylcarbosilane was synthesized from thermal rearrangement of polymethylphenylsilane around $350^{\circ}C{\sim}430^{\circ}C$. Characterization of synthesized polyphenylcarbosilane was performed with 29Si, 13C, 1H NMR, FT-IR, TG, XRD, GPC and GC analysis. From FT-IR data, the band at 1035 cm-1 is very strong and assigned to CH2 bending vibration in Si-CH2-Si group, indicating the formation of the polyphenylcarbosilane. Number average of molecular weight (Mn) of the polyphenylcarbosilane synthesized at $400^{\circ}C$ for 6hwas 2, 500 and is easily soluble in organic solvent. SiOC/SiO2 thin film was fabricated on ton-type silicon wafer by spin coating using 30wt % polyphenylcarbosilane incyclohexane. Curing of the film was performed in the air up to $400^{\circ}C$ for 2h. The thickness of the film is ranged from $1{\mu}m$ to $1.7{\mu}m$. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and show a dielectric constant as low as 2.5 without added porosity. The SiOC /SiO2 thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.293-299
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• 2020

The characteristics of the polycarbosilane (PCS)-based composite ceramic layer was studied by controlling the curing temperature. The stress at the interface of the graphite and SiOC composite layer was evaluated v ia finite element analysis. As a result, the tensile stress was released as the carbon ratio of the SiC decreases. In experiment, the SiOC layers were coated on the VDR graphite block by dip-coating process. It was revealed that the composition of Si and C was effectively adjusted depending on the curing temperature. As the solution-based process is employed, the surface roughness was reduced for the appropriate PCS curing temperature. Hence, it is expected that the cured SiOC layer can be utilized to reduce cracking and peeling of SiC ceramic composites on graphite mold by improving the interfacial stress and surface roughness.

• Korean Journal of Materials Research
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• v.27 no.9
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• pp.471-476
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• 2017

In order to improve the high temperature oxidation resistance and lifespan of mat type porous carbon insulation, SiC was coated on carbon insulation by solution coating using polycarbosilane solution, curing in an oxidizing atmosphere at $200^{\circ}C$, and pyrolysis at temperatures up to $1200^{\circ}C$. The SiOC phase formed during the pyrolysis process was converted into SiC crystals as the heat treatment temperature increased, and a SiC coating with a thickness of 10-15 nm was formed at $1600^{\circ}C$. The SiC coated specimen showed a weight reduction of 8.6 % when it was kept in an atmospheric environment of $700^{\circ}C$ for 1 hour. On the other hand, the thermal conductivity was 0.17 W/mK, and no difference between states before and after coating was observed at all.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.183-190
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• 2022

Diopside (CaMgSi₂O₆) is known to have high bioactivity as well as excellent mechanical properties. In this study, we tried to improve the bioactivity of zirconia ceramics by surface coating of diopside and its bioactivity was investigated through an in vitro test. Surface coating on zirconia substrate was prepared by sol-gel method using a diopside sol which was prepared by dissolving Ca(NO₃)₂·4H₂O, MgCl₂·6H₂O and Si(OC₂H₅)₄ in ethanol with a fixed molar ratio and then hydrolysis. To examine the bioactivity of diopside coating, we examined the surface dissolution and the precipitation of new hydroxyapatite particles through in vitro test in SBF (Simulated Body Fluid) solution. Dense and thick diopside coating layers could be fabricated on zirconia substrate by sol-gel method. Also, we confirmed that they contained high bioactivity from the in vitro test, indicated the precipitation of hydroxyapatite particles after the 14 days immersion in SBF solution. In addition, we checked that the bioactivity of diopside coated layers was dependent on the repeated coating cycle and coating thickness.

• Journal of the Korean Society of Safety
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• v.12 no.4
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• pp.79-85
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• 1997

In order to improve the surface characteristics of polymethylmethacrylate(PMMA), oxide thin film coatings were applied using the sol-gel dip-coating technique. The $Si(OC_2H_5)_4$, tetra-ethyl-ortho-silicate(TEOS) was used as a starting material for $SiO_2$ coating. The hardness of the alkoxy-derived oxide-coated PMMA was increased from 190 MPa for non-coated PMMA with increasing film thickness. By optimizing the heating conditions and the hydrolysis conditions, a maximum apparent hardness obtained In the present study was achieved 310 MPa using the withdrawal velocity of 5cm/min and heat treatment at $90^{\circ}C$ for 5 hours, which is about 1.6 times larger than that of uncoated PMMA.

• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.99-108
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• 1994

Films of glass-ceramics $Li_2O-Al_2O_3-SiO_2$(LAS)system were prepared on substrate of an iron plate(SCP) by sol-gel technique using metal alkoxide such as Si$(OC_2H_5)_4$,Al$(OC_2H_9)_3$) and Ti$(OC_2H_6)_4$). Sol which was made by means of simple spray coating, on the substrate was hydrolyzed at 75~$80^{\circ}C$ in moisture cabinet (80~90 % humidity) to form the multicomponent gel. The films up to about 0.8~1.0$mu extrm{m}$ in thickness can be obtained by repeating operation, spraylongrightarrowhydrolysis and condensationlongrightarrowdryinglongrightarrowheating and crystallization at $700^{\circ}C$ for 3~5min. The far-infrared radiation spectra of the coated films on substrate were examined by FT-IR and of films was also observed by scanning electron micrograph technique. The thermal evaluation of the gel-film is followed by TG/DTA measurements. The structure evaluation is followedd X-ray diffraction. These results suggest that this process is applicable to far-infrared radiat at thin film technique.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.525-529
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• 2017

To improve the thermal resistance of a porous borosilicate lining block, we prepared and applied polysiloxane-fumed silica-ethanol slurry on top of the block and fired the coating layer using a torch for 5 minutes at $800^{\circ}C$. We conducted magnified characterizations using a microscope and XRD analysis to observe phase transformations, and TGA-DTA analysis to determine the thermal resistance. Thermal characterizations showed improved heat resistance with relatively high polysiloxane content slurry. Cross-sectional optical microscope observation showed less melting near the surface and decreased pore formation area with higher polysiloxane content slurry. XRD analysis revealed that the block and coating layer were amorphous phases. TGA-DTA analysis showed an endothermic reaction at around $550^{\circ}C$ as the polysiloxane in the coating layer reacted to form SiOC. Therefore, coating polysiloxane on a borosilicate block contributes to preventing the melting of the block at temperatures above $800^{\circ}C$.

• Solar Energy
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• v.6 no.2
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• pp.70-75
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• 1986

The fabrication procedure and characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS solar cells forming a fine grating pattern of aluminum evaporated on to p-type silicon crystal are discribed. The proper temperature for oxide growing of these cells was found to be about $450^{\circ}C$ for 20 minutes with oxygen flow. The conversion efficiency increased about 3% after $750{\AA}$ thickness of tantalium silica film spin on anti-reflective coating. The best results showed that $V_{oc}=0.545V,\;J_{sc}=34mA$ and F.F = 0.65, which represent that the conversion efficiency is 12%.