• Title/Summary/Keyword: SiO gas

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Preparation and Characterization of Porous Glass in $Na_2O-B_2O_3-SiO_2$ System ; Addition Effects of $ZrO_2$ and MgO (분상법을 이용한 봉규산염계 다공질 유리의 제조 및 특성;$ZrO_2$와 MgO 첨가 영향)

  • 김영선;최세영
    • Journal of the Korean Ceramic Society
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    • v.32 no.3
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    • pp.385-393
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    • 1995
  • Akali-resistant porous glass was prepared by phase separation in Na2O-B2O3-SiO2 system containing ZrO2 and MgO. ZrO2 was added for alkali-resistance and MgO for anti-cracking during leaching. Optimal content of ZrO2 for alkali-resistance was 7wt% and devitrification by heat treatment resulted from further addition. Pore size and pore volume were decreased and specific surface area was increased with ZrO2 addition due to depression in phase separation. Addition of 3mol% MgO to mother glass containing 7wt% ZrO2 was effective for anti-crack during leaching. In this case, with phase separation at 55$0^{\circ}C$ and 5$25^{\circ}C$ for 20 hrs. crack-free porous glasses could be prepared. The relation between pore size r and heat treatment time t at 55$0^{\circ}C$ was D=25.58+18.16t. According to measurement of gas permeability, the mechanism of gas permeation was Knudsen flow. N2 and He permeability of porous glass which was prepared by heat treatment at 55$0^{\circ}C$ for 20 hrs. were 0.843$\times$10-7mol/$m^2$.s.Pa and 2.161$\times$10-7mol/$m^2$.s.Pa respectively.

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Catalytic Effects and Characteristics of Ni-based Catalysts Supported on TiO2-SiO2 Xerogel

  • Jeong, Jong-Woo;Park, Jong-Hui;Choi, Sung-Woo;Lee, Kyung-Hee;Lee, Chang-Seop
    • Bulletin of the Korean Chemical Society
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    • v.28 no.12
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    • pp.2288-2292
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    • 2007
  • The catalytic activities of nickel-based catalysts were estimated for oxidizing acetaldehyde of VOCs exhausted from industrial facilities. The catalysts were prepared by sol-gel methods of SiO2 and SiO2-TiO2 as a xerogel followed by impregnating Al2O3 powder with the nickel nitrate precursor. The crystalline structure and catalytic properties for the catalysts were investigated by use of BET surface area, X-ray diffraction (XRD), Xray photoelectron spectroscopy (XPS) and temperature programmed reduction (TPR) techniques. These results show that nickel oxide is transformed to NiAl2O4 spinel structure at the calcination temperature of 400 °C in response to the steps with after- and co-impregnation of Al2O3 powder in sol-gel process. The NiAl2O4 could suppress the oxidation reaction of acetaldehyde by catalysts. The NiO is better dispersed on SiO2-TiO2/Al2O3 support than SiO2/Al2O3 and SiO2-TiO2-Al2O3 supports. From the testing results of catalytic activities for oxidation of acetaldehyde, Catalysts showed a big difference in conversion efficiencies with the way of the preparation of catalysts and the loading weight of nickel. The catalyst of 8 wt.% Ni/TiO2-SiO2/Al2O3 showed the best conversion efficiency on acetaldehyde oxidation with 100% conversion efficiency at 350 °C.

High Strength $Si_3N_4/SiC$ Structural Ceramics (고강도 $Si_3N_4/SiC$ 구조세라믹스에 관한 연구)

  • 김병수;김인술;장윤식;박홍채;오기동
    • Journal of the Korean Ceramic Society
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    • v.30 no.12
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    • pp.999-1006
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    • 1993
  • Si3N4(p)-SiC(p) composites were prepared by gas pressure sintering at 190$0^{\circ}C$ for 1 hour. $\alpha$-SiC with average particle size of 0.48${\mu}{\textrm}{m}$ were dispersed from zero to 50vol% in $\alpha$-Si3N4 with average particle size of 0.5${\mu}{\textrm}{m}$. Y2O3-Al2O3 system was used as sintering aids. When 10vol% of SiC was added to Si3N4, optimum mechanical properties were observed; relative density of 98.8%, flextural strength of 930MPa, fracture toughness of 5.9MPa.m1/2 and hardness value of 1429kg/$\textrm{mm}^2$. Grain growth of $\beta$-Si3N4 was inhibited as the amount of added SiC was increased. SiC particles were found inside the $\beta$-Si3N4 intragrains in case of 10, 20 and 30vol%SiC added composites.

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Influence of gas flow on structural and optical properties of ZnO submicron particles grown on Au nano thin films by vapor phase transport (가스 유입량이 기상이동법으로 금 나노박막위에 성장된 산화아연 입자에 미치는 영향)

  • Kim, So-A-Ram;Nam, Gi-Ung;Kim, Min-Su;Park, Hyeong-Gil;Yun, Hyeon-Sik;Im, Jae-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.211-212
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    • 2012
  • ZnO submicron particles were grown on Au-catalyzed Si substrate by a vapor phase transport (VPT) growth process under different mixture gas ratio at growth temperature of $900^{\circ}C$. The structural and optical properties of the ZnO submicron particles were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO submicron particles could be clustered with the $O_2/Ar$ mixture gas ratio(%) higher than 10%, and it was mainly determined by the gas ambient. Particularly, when the $O_2/Ar$ mixture gas ratio was 30%, it was observed the ZnO submicron particles with diameters in the range of 125 to 500 nm and the narrowest full width at half maximum (FWHM) of XRD and PL spectra with $0.121^{\circ}$ and 92 meV, respectively. It was found that the structural and optical properties of the ZnO submicron particles were improved with increasing the $O_2/Ar$ mixture gas ratio through the XRD and PL spectra.

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Preparation of CeO$_2$ Thin Films as an Insulation Layer and Electrical Properties of Pt/$SrBi_2$$Ta_2$$O_9$/$CeO_24/Si MFISFET (절연층인 CeO$_2$박막의 제조 및 Pt/$SrBi_2$$Ta_2$$O_9$/$CeO_24/Si MFISFET 구조의 전기적 특성)

  • Park, Sang-Sik
    • Korean Journal of Materials Research
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    • v.10 no.12
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    • pp.807-811
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    • 2000
  • CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

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Fabrication of High Permeable Nanoporous Carbon-SiO$_2$ Membranes Derived from Siloxane-containing Polyimides

  • Kim, Youn Kook;Han, Sang Hoon;Park, Ho Bum;Lee, Young Moo
    • Korean Membrane Journal
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    • v.6 no.1
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    • pp.16-23
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    • 2004
  • The silica containing carbon (C-SiO$_2$) membranes were fabricated using poly(imide siloxane) (PIS) having -CO- swivel group. The characteristics of porous C-SiO$_2$ structures prepared by the pyrolysis of poly(imide siloxane) were related with the micro-phase separation between the imide block and the siloxane block. Furthermore, the nitrogen adsorption isotherms of the CMS and the C-SiO$_2$ membranes were investigated to define the characteristics of porous structures. The C-SiO$_2$ membranes derived from PIS showed the type IV isotherm and possessed the hysteresis loop, which was associated with the mesoporous carbon structures, while the CMS membranes derived from PI showed the type I isotherm. For the molecular sieving probe, the C-SiO$_2$ membranes pyrolyzed at 550, 600, and 700$^{\circ}C$ showed the O$_2$ permeability of 924, 1076, and 367 Barrer (1 ${\times}$ 10$\^$-10/㎤(STP)cm/$\textrm{cm}^2$$.$s$.$cmHg) and O$_2$/N$_2$ selectivity of 9, 8, and 12.

Characteristics of Oxynitride MOS Capacitor Prepared in $N_2O$ Atmosphere of Furnace (Furnace의 $N_2O$ 분위기에서 성장시킨 Oxynitride MOS 캐패시터 특성)

  • 박진성;문종하;이은구
    • Journal of the Korean Ceramic Society
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    • v.32 no.11
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    • pp.1241-1245
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    • 1995
  • Ultrathin oxynitride (SiOxNy) films, 8nm thick, were formed on Si(100) in furnace using O2 and N2O as reactant gas. Compared with conventional furnace grown oxide, oxynitride dielectrics show better characteristics of Qbd and I-V, and less flat-band voltage shift. Excellent diffusion barrier property to dopant (BF2) is also confirmed.

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A Study on the Deposition Characteristics of Ultrafine SiO2 Particles by Temperature Control in Deposition Zone (증착 구간에서의 온도 제어에 따른 SiO2 초미립자의 증착 특성 고찰)

  • You, Soo-Jong;Kim, Kyo-Seon
    • Journal of Industrial Technology
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    • v.16
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    • pp.157-168
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    • 1996
  • The deposition characteristics of ultrafine $SiO_2$ particles were investigated in a tube furnace reactor theoretically and experimentally controlling tube wall temperature in deposition zone. The model equations such as mass and energy balance equations and aerosol dynamic equations inside reactor and deposition tube were solved to predict the particle growth and deposition. The particle size and deposition efficiencies of $SiO_2$ particles were calculated, changing the process conditions such as tube furnace setting temperature, total gas flow rate inlet $SiCl_4$ concentration and were compared with the experimental results.

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Synthesis of $\beta$-Sialon from Wando Pyrophyllite (2) (완도 납석으로부터 $\beta$-Sialon의 합성 (2))

  • 이홍림;장병국;이형복
    • Journal of the Korean Ceramic Society
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    • v.22 no.5
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    • pp.35-42
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    • 1985
  • $eta$-Sialon powders were prepared by reduction-nitridation from mixture of Wando pyrophyllite and graphite as a reducing agent at 135$0^{\circ}C$ in 80% $N_2$-20% $H_2$ atmosphere. As the reaction products $Si_2ON_2$, $\beta$-$Si_3N_4$ a--$Si_3N_4$ and $\beta$-SiC were observed. Additive agents of MgO, CaO, $Y_2O_3$ were used for promoting the reduction and nitridiation aeaction. The present study was conducted to investigate the effects of silica-carbon ratio ($SiO_2$/C=weight ratio), raction time gas flow rate pellet size and powder packing on synthesis of $\beta$-Sialon from Wando pyropyllite.

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A Study on the Thermal Stability in Multi-Aluminum Thin Films during Isothermal Annealing (등온 열처리시 알루미늄 다층 박막의 열적 안정성에 관한 연구)

  • 전진호;박정일;박광자;김홍대;김진영
    • Journal of the Korean institute of surface engineering
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    • v.24 no.4
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    • pp.196-205
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    • 1991
  • Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

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