• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.22-25
• /
• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.116-117
• /
• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.1
• /
• pp.16-21
• /
• 2015

In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.244-244
• /
• 1999

Liquid Crystal Displays(LCDs) 투명성 전도막으로 사용하는 Indium Tin Oxide (ITO)의 고밀도 식각특성을 조사하였다. 특히 ITO식각의 경우, pixel electrode 전극에서 사용되는 underlayer인 SiO2, Si3N4와의 최적의 선택비를 얻는데 중점을 두고 있다. 따라서 본 실험에서는 Inductively Coupled Plasma(ICP)를 이용하여 source power, gas combination, bias voltage, pressure 및 기판온도에 따른 ITO의 식각 특성과 이의 underlayer인 SiO2, Si3N4와의 선택비를 조사하였다. Ar과 CH4를 주된 식각가스로서 사용하였으며 첨가가스로는 O2와 HBr를 사용하였다. ITO의 식각특성을 이해하기 위하여 Quadruple Mass Spectrometry(QMS), Optical emission spectroscopy(OES) 이용하였으며, 식각된 sample의 잔류물을 조사하기 위하여 X-ray photoelectron spectroscopy(XPS)를 이용하여 분석하였다. Ar gas에 적정량의 CH4 혼합이 순수한 Ar 가스로 식각한 경우에 비하여 ITO와 SiO2, Si3N4의 선택비가 높았으며, 더 높은 식각 선택비를 얻기 위하여 Ar/CH 분위기에서 첨가가스 O2, HBr을 사용하였다. Source power 및 bias 증가에 따라 ITO의 식각률은 증가하나, underlayer와의 선택비는 감소함을 보였다. 본 실험에서 측정된 ITO의 high 식각률은 약 1500$\AA$/min이며, SiO2, Si3N4와의 high selectivity는 각각 7:1, 12:1로 나타났다. ITO의 etchrate 및 선택비는 source power, bias, pressure, CH 가스첨가에 의존하였지만 기판온도에는 큰 변화가 없음을 관찰하였다. 또한 적정량의 가스조합으로 식각된 시편의 잔류물을 줄일 수 있었다.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.25 no.5
• /
• pp.660-665
• /
• 2001

Ultrafine particles have been widely used in many high technology industrial areas. The spherical nonagglomerated and uniform nanometer-size SiO$_2$particles are synthesized by the direct injection of TEOS(Tetraethyorthosilicate) using electro-hydrodynamic spraying method. Electro-hydrodynamic spraying can generate submicron-size TEOS droplets having high electric charges by applying a high electric field between the liquid injection nozzle and the reaction tube. These TEOS droplets are evaporated, and thermally decomposed or oxidized to produce nanometresized SiO$_2$particles in the reaction tube. Spherical, nonagglomerated and ultrafine particles are generated in various conditions and examined by using SEM and SMPS. As the total gas flow rate in the furnace changes from 1.5 lpm, the mean diameter of SiO$_2$particle decreases from 120 nm to 68 nm. The synthesized particle charging fractions are also investigated.

• Journal of the Korean Ceramic Society
• /
• v.37 no.1
• /
• pp.21-25
• /
• 2000

Gas pressure sintered silicon nitride based composites with 5 wt% $\beta$-Si3N4 whiskers were prepared, and the variations depending on sintering additives and sintering temperature were studied. Sintering additives were 6 wt% Y2O3-1 wt% MgO(6Y1M), 6 wt%Y2O3-1 wt% Al2O3(6Y1A), 6 wt% Y2O3-1 wt% SiO2(6Y1S), and whiskers were unidirectionally oriented by a modified tape casting technique. Samples were fully densified by gas pressure sintering at 2148 K and 2273 K. As the sintering temperature increased, the size of large elongated grains was increased. Three point flexural strength of 6Y1M and 6Y1M samples was higher than that of 6Y1S sample, and the strength decreased as the sintering temperature increased. The indentation crack length became shorter for the sample sintered at higher temperature, and the difference between the cracks length parallel to and normal to the direction of whisker alignment was decreased. In case of cracks 45$^{\circ}$off the whisker alignment direction, the crack length anisotropy disappeared.

• Korean Journal of Materials Research
• /
• v.18 no.2
• /
• pp.92-97
• /
• 2008

In spray pyrolysis, the effects of the preparation temperature, flow rate of the carrier gas and concentration of the spray solution on characteristics such as the morphology, size, and emission intensity of $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders under long-wavelength ultraviolet light were investigated. The phosphor powders obtained post-treatment had a range of micron sizes with regular morphologies. However, the composition, crystal structure and photoluminescence intensity of the phosphor powders were affected by the preparation conditions of the precursor powders. The $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders prepared at temperatures that were lower and higher than $700^{\circ}C$ had low photoluminescence intensities due to deficiencies related to the of Cl component. The phosphor powders with the deficient Cl component had impurity peaks of $Ca_2SiO_4$. The optimum flow rates of the carrier gas in the preparation of the $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders with high photoluminescence intensities and regular morphologies were between 40 and 60 l/minute. Phosphor powders prepared from a spray solution above 0.5 M had regular morphologies and high photoluminescence intensities.

• Particle and aerosol research
• /
• v.7 no.3
• /
• pp.79-85
• /
• 2011

Porous $TiO_2-SiO_2$ particles were synthesized by co-assembly of nanoparticles of $TiO_2$ and $SiO_2$ in evaporating aerosol droplets. Poly styrene latex (PSL) particles were employed as a template of porous particles. Flowrate of dispersion gas, weight ratio of $TiO_2/SiO_2$ and $SiO_2$ concentration in the precursor, and PSL size were chosen as process variables. The morphology, crystal structure, chemical bonding, and pore size distribution were analyzed by FE-SEM, XRD, FT-IR, BET. The morphology of porous $TiO_2-SiO_2$ particles was spherical and the average particle size range were from 1 to $10{\mu}m$. The particles were composed of meso and macro pores. The average particle diameter and pore volume of the as prepared particles were dependant on process variables. It was found that UV-Vis absorption of the porous particles was comparable with pure $TiO_2$ nanoparticles even though $TiO_2/SiO_2$ ratio is low in the porous particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.127-128
• /
• 2009

CCP방식의 식각에 있어서 CF4/O2 Plasma Etch에 Ar을 첨가함으로써 Etch특성이 어떻게 변화하는지를 조사하였다. FE-SEM를 이용하여 Etch Profile를 측정하였다. 또한 Elipsometer와 Nanospec을 이용하여 Etch rate를 측정하였다. Ar의 비율이 전체의 47%정도를 차지하였을 때까지 Etch Profile이 향상되었다가 그이후로는 다시 감소하는 것을 볼 수 있었다. Ar을 첨가할수록 etch rate은 계속 향상되었다. Ar을 첨가하는 것은 물리적인 식각으로 반응하여 Etch rate의 향상과 적정량의 Ar을 첨가했을 때 Etch profile이 향상되는 결과를 얻었다.

• Resources Recycling
• /
• v.33 no.2
• /
• pp.54-61
• /
• 2024

When steel contaminated with Pb, produced by the decay of natural radionuclides, is remelted, Pb distributes among the metal, slag, and gas phases. In this study, 5 wt%Pb was added to Fe and melted with CaO-SiO₂-Al₂O₃-MgO slag to investigate Pb's distribution in the metal/slag/gas. As slag basicity ((wt%CaO)/(wt%SiO₂)) increased, Pb solubility in Fe slightly increased, while Pb in the slag tended to decrease. Consequently, the slag/metal distribution ratio of Pb decreased with increasing basicity. Thermodynamic calculations revealed that the slag/Fe phase distribution ratio of Pb remained very low irrespective of the activity coefficient of PbO in the slag, consistent with the experimental results. The calculated evaporation rate of Pb in Fe-Pb was approximately 22 times that of Fe; hence, most of the Pb evaporated into the gas phase.