• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.881-883
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• 2005

In case is below length 100nm of gate, various kinds problem can be happened with by threshold voltage change of device, occurrence of leakage current by tunneling because thickness of oxide by 1.5nm low scaling is done and doping concentration is increased. SiO$_2$ dielectric substance can not be used for gate insulator because is expected that tunneling current become 1A/cm$^2$ in 1.5nm thickness low. In this paper, devised double gate MOSFET(DGMOSFET) to decrease effect of leakage current by this tunneling. Therefore, could decrease effect of these leakage current in thickness 1nm low of SiO$_2$ dielectric substance. But, very big gate insulator of permittivity should be developed for develop device of nano scale.

• Journal of the Korean Applied Science and Technology
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• v.22 no.3
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• pp.281-288
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• 2005

The silica nanoparticles were used as support of catalyst, filling material, electronic assembler, thin film material, and sensor material. And, the titania nanoparticles were used as pigment, dielectric substance, sensor and photocatalyst. In this paper, the spherical composite particles of $TiO_2/SiO_2$with narrow size distribution and phase pure were synthesized by ultrasonic spray pyrolysis method from $TiOSO_4$ and colloidal silica solution. Using ultrasonic apparatus, this starting solution was vaporized to droplets, and these droplets were induced into tube furnace by carrier gas. The resulting composite powder was characterized by scanning electron microscopy, X-ray diffraction analysis, TG-DTA, in vitro sun protection factor(SPF) and BET surface area analysis.