• 자원리싸이클링
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• 제11권5호
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• pp.21-23
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• 2002

A new process based on the co-precipitation method was developed fer removing harmful impurities during Mn-Zn ferrite production such as $SiO_2$ and P from waste pickle liquor. By this process a final result of less than 100 ppm of $SiO_2$ and less than 10 ppm of P content in the ferric oxide is easily attained. Though Ca cannot be removed by this process, water rinsing of the ferric oxide is effective fer reducing Ca content to less than 100 pm. For further purification, the origins of each impurity must be investigated and then taken away.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.68-69
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• 2007

We have prepared p-type ZnO:Al films in pure oxygen ambient on n-type Si (100) and homo buffer layers by RF magnetron sputtering system. Hall effect measurement shows that the film annealed at $600^{\circ}C$ possesses p-type conductivity and the film annealed $800^{\circ}C$ does not. PL spectra show different properties of p- and n-type ZnO film. The corresponding peaks of PL spectra of p- and n-type show at about same positions. The intensities of high photon energy of n-type film on buffer shows decreasing tendency.

• 한국결정성장학회지
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• 제8권2호
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• pp.370-376
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• 1998

분무열분해된 전구체로부터 수열반응에 의해 분말 Zinc-Silicate 형광물질 합성에 대하여 연구하였다. 열분해 전구체를 사용한 수열반응의 특징은 고상반응에서의 분쇄시의 불순물의 함유를 배제하였으며, $250^{\circ}C$의 수열반응에 의해 $\alpha-Zn_2SiO_4$ 분말합성이 가능하였다.

• 한국광학회지
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• 제18권5호
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• pp.351-361
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• 2007

마그네트론 스퍼터링 방법을 사용하여 광기록 매체인 GST 박막과 보호층인 $ZnS-SiO_2$ 박막 또는 $Al_2O_3$ 박막을 c-Si 기판위에 증착한 뒤 in-situ 타원계를 사용하여 상변화 광기록층인 GST 시료의 타원상수 온도의존성을 실시간으로 측정한 결과 $300^{\circ}C$ 이상의 온도에서 GST의 고온 타원상수는 가열 환경 및 보호층의 종류에 따라 큰 차이를 보여주었다. 가열 환경 및 보호층의 종류에 따라 GST의 고온 타원상수가 달라지는 원인인 $1{\sim}2$시간의 긴 승온시간을 줄이기 위해 Phase-change Random Access Memory(PRAM) 기록기를 사용하였고 수십 ns 이내의 짧은 시간 내에 순간적으로 GST 시료를 가열 및 냉각하였다. GST층이 손상되지 않고 결정화 및 고온 열처리가 되는 PRAM 기록기의 기록모드와 레이저출력 최적조건을 찾았으며 다층박막 구조에서 조사되는 레이저 에너지가 광기록층인 GST에 흡수되는 양과 이웃하는 층으로 전파되는 양을 열확산방정식으로 나타내고 이를 수치해석적으로 풀어 레이저출력과 GST 박막의 최고 온도와의 관계를 구하였다. 지름이 1um 정도인 레이저스폿을 대략 $0.7{\times}1.0mm^2$의 면적내에 촘촘히 기록한 다음 고온 열처리된 GST 시료의 분광타원데이터를 500 um의 빔 크기를 가지는 마이크로스폿 분광타원계를 사용하여 구하고 그 복소굴절률을 결정하였다. In-site 타원계를 사용할 때에 가열 환경 보호층 물질의 영향을 크게 받은 GST의 고온 복소굴절률은 PRAM 기록기를 사용하였을 때에는 가열환경이나 보호층의 종류에 무관하게 안정된 값을 보여주었다 Atomic Force Microscope(AFM)과 Scanning Electron Microscopy(SEM)을 통해 관찰한 GST 다층박막시료의 고온 열처리 전후 표면미시거칠기 변화도 PRAM 기록기를 사용할 때에는 in-situ 타원계를 사용할 때보다 1/10 정도의 크기를 보여주어 PRAM 기록기와 분광타원계를 사용하여 결정한 GST의 고온광학물성의 신뢰성을 확인하여 주었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.120-120
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• 2016

Ti-6Al-4V alloy have been used for dental implant because of its excellent biocompatibility, corrosion resistance, and mechanical properties. However, the integration of such implant in bone was not in good condition to achieve improved osseointergraiton. For solving this problem, calcium phosphate (CaP) has been applied as coating materials on Ti alloy implants for hard tissue applications because its chemical similarity to the inorganic component of human bone, capability of conducting bone formation and strong affinity to the surrounding bone tissue. Various metallic elements, such as strontium (Sr), magnesium (Mg), zinc (Zn), sodium (Na), silicon (Si), silver (Ag), and yttrium (Y) are known to play an important role in the bone formation and also affect bone mineral characteristics, such as crystallinity, degradation behavior, and mechanical properties. Especially, Zn is essential for the growth of the human and Zn coating has a major impact on the improvement of corrosion resistance. Plasma electrolytic oxidation (PEO) is a promising technology to produce porous and firmly adherent inorganic Zn containing $TiO_2(Zn-TiO_2)$coatings on Ti surface, and the a mount of Zn introduced in to the coatings can be optimized by altering the electrolyte composition. In this study, corrosion behavior of Ti-6Al-4V alloy after plasma electrolytic oxidation in solutions containing Ca, P and Zn were studied by scanning electron microscopy (SEM), AC impedance, and potentiodynamic polarization test. A series of $Zn-TiO_2$ coatings are produced on Ti dental implant using PEO, with the substitution degree, respectively, at 0, 5, 10 and 20%. The potentiodynamic polarization and AC impedance tests for corrosion behaviors were carried out in 0.9% NaCl solution at similar body temperature using a potentiostat with a scan rate of 1.67mV/s and potential range from -1500mV to +2000mV. Also, AC impedance was performed at frequencies ranging from 10MHz to 100kHz for corrosion resistance.

• 한국전기전자재료학회논문지
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• 제25권10호
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• pp.824-829
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• 2012

Zn wires have been electrically exploded in methanol or distilled water using the pulsed power technologies. The nanopowders produced by the explosions have been observed by using SEM and TEM, and analyzed its phase by using EDS and XRD. The nanopowders produced in distilled water showed ZnO phase only. On the other hands, the nanopowder produced in methanol showed mixed phases with Zn and ZnO. The HR-TEM images of the nanopowders produced in methanol showed that the some particles have been coated with carbon like materials. It is considered that the carbon coatings could be depended on the positions of the particles during the plasma state formed by explosion.

• 한국약용작물학회지
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• 제1권2호
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• pp.171-177
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• 1993

본연구(本硏究)는 쑥의 周年生産(주년생산)과 쑥의 용도별(用途別) 적품종(適品種)을 선발육성(選拔育成)하기 위(爲해) 전국(全國)에서 수집(蒐集)된 28종(種)에 대(對)하여 지상부(地上部)의 생육특성(生育特性)과 잎에 대(對)한 무기(無機) 및 유기성분(有機成分)을 分析(분석)한 바 얻어진 주요결과(主要結果)는 다음과 같다. 1. 북부수집종(北部蒐集種)은 경장(莖長), 경태(莖太), 분지수(分枝數), 절간수(節桿數), 잎의크기, 잎의 모용(毛茸)가 모두 커 중부(中部)와 남부수집종(南部蒐集種)보다 지상부(地上部)의 생육(生育)이 왕성(旺盛)하였다. 2. 생체중(生體重)은 명주산 덤블쑥이 가장 무거웠으며, 지역별(地域別)로는 전북이리 수집종(蒐集種)과 경북의성 수집종(蒐集種)이 가장 많았으며, 이들 수집종(蒐集種)에 대(對)한 특성(特性)은 잎수(數)와 절간수(節桿數)가 많고 잎의 모용(毛茸)가 길었다. 3. 잎의 무기성분(無機成分)은 북부수집종(北部蒐集種)은 N, MgO, Zn, Cu, Mn 함량(含量)이 많았던 반면(反面), 중부수집종(中部蒐集種)은 $P_{2}O_5$과 $K_{2}O$ 함량(含量)이 또한 남부수집종(南部蒐集種)은 Fe 함량(含量)이 많이 함유(含有)되었다. 4. 잎의 탄수화물(炭水化物) 함량(含量)이 많올수록 $K_{2}O$ 함량(含量)도 많은 경향(傾向)이 있다. 5. 생체중(生體重)이 가장 많았던 전북이리 수집종(蒐集種)과 경북의성 수집종(蒐集種)은 잎의 $N,\;P_{2}O_5,\;K_{2}O$ 함량(含量)이 많았으나, 반대(反對)로 MgO, Zn, Ca, Mn, Fe 함량(含量)은 적게 함유(含有)되어 있었다.

• 한국재료학회지
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• 제12권9호
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• pp.735-739
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• 2002

$(Y,Gd)BO_3$: Eu, $Zn_2$$SiO_4$ : Mn and $BaMgAl_{10}$ $O_{17}$ : Eu phosphors used in PDP were continuously irradiated by vacuum ultra violet generated from the penning gas (96%Ar+4%Xe) discharge and then the change of emitting intensity with time was investigated. The brightness of these phosphors decreased exponentially with VUV excitation time. The experimental data showed that the degradation rate increased in the order of $Zn_2$$SiO_4$ : Mn>(Y,Gd)$BO_3$: Eu>$BaMgAl_{10}$ $O_{17}$ : Eu phosphor. This different degradation property of phosphors was interpreted in terms of brightness saturation and stability against VUV irradiation. It was found that the degradation property of $(Y,Gd)BO_3$ : Eu red phosphor synthesized by ultrasonic thermal spray was superior to commercial phosphor.

• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1719-1723
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• 2014

In this study, the microwave dielectric properties of nano spheroidization glass powders added $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid state reaction have been investigated. Adding $(Ba_{0.4}Ca_{0.6})SiO_3$ nano spheroidization glass powders could effectively promote the densification even in the case of decreasing the sintering temperature. When the glass frit is 0.3 wt% and sintering is carried out at a temperature of $1500^{\circ}C$ for 6 hr, a temperature stable microwave dielectric ceramic could be obtained, which has a dielectric constant (${\varepsilon}_r$) of 30.2, a quality factor ($Q{\times}f_0$) of 124,000 GHz and a temperature coefficient of resonance frequency (${\tau}_f$) of $2ppm/^{\circ}C$.