• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.215.1-215.1
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• 2015

본 연구에서는 용액 공정 기반 ZrO2 절연막의 우수한 특성을 확인하기 위해 SiO2 절연막을 가지는 IGZO (Indium-Gallium-Zinc Oxide) 박막 트랜지스터와 비교했다. In:Ga:Zn=1:1:1의 비율의 0.3 M IGZO 용액과 0.2 M ZrO2용액을 사용하였다. ZrO2 박막 트랜지스터는 0.2M ZrO2 용액을 5번 반복 증착하며 140nm 두께의 ZrO2 절연막을 가지는 IGZO 박막 트랜지스터와 비교대상으로 동일한 두께의 SiO2의 절연막을 가지는 IGZO 박막 트랜지스터를 제작하였다. ZrO2 박막 트랜지스터의 문턱전압은 4.3V로 SiO2 박막 트랜지스터의 -6.1V보다 낮았고, 이동도는 $1.2356cm^2/V{\cdot}s$로 $0.0554cm^2/V{\cdot}s$ 보다 약 20배 높았다. 실험 결과를 통해 ZrO2를 절연막으로 사용한 박막 트랜지스터의 특성이 더 향상되었음을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.238-243
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• 2013

We investigated the effect of Pb-metal filler added to a hybrid paste(PbO-$Bi_2O_3-B_2O_3$-ZnO glass frit and Pb-powder), for joining flip-chip sat lower temperatures than normal. The glass transition temperature was detected at $250^{\circ}C$ and the softening point occurred at $330^{\circ}C$. As the temperature increased, the specific density decreased due to the volatility of the Pb-metal and boron component in the glass. When the glass was heat-treated at $350^{\circ}C$ for 5 min, XRD results revealed a crystalline $Pb_4Bi_3B_7O_{19}$ phase that had been initiated by the addition of Pb-filler in the hybrid paste. The addition of the Pb-metal filler caused are action between the Pb-metal and glass that accelerated the formation of the liquid phase. The liquid phase that formed, promoted bonding between the flip-chip substrate sat lower temperature.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.441-444
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• 2007

In this paper, the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices with high-quality multi-layer reflectors are proposed. The ultrathin Cr film $(300\;\AA-thick)$ between $SiO_2$ film and W film is formed by a sputtering-deposition in order to enhance the adherence at their interfaces. The resonance frequency was observed to vary with the number of the reflectors. This seems to be attributed to the change in the effective thickness of the ZnO film. Also, increasing the number of layers has led to a significant improvement of the series/parallel quality factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.45-46
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• 2005

The piezoelectric ZnO thin films were deposited onto Al/Si substrate in order to figure out the crystalline and the residual stress of deposited films. As the $Ar/O_2$ gas ratio is increased, c-axis orientation of deposited films is significantly enhanced and also the residual stresses of ZnO films are all compressive. They are decreased from -1.2 GPa to -950 MPa as the $Ar/O_2$ gas ratio is increased. A diaphragm-based piezoelectric microspeaker fabricated on ONO films shows about 14 mPa output pressure at 1 kHz with $8V_{peak-to-peak}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.2
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• pp.61-66
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• 2003

The electromagnetic properties and thermal behavior of Mn-Zn ferrite cores used for the blocking filter in he Power Line Communication(PLC) application were investigated as the function of additives. The highest density and permeability of 4.98 g/㎤) and 8,221 respectively were obtained to the specimen with composition of MnO 24 mol%, ZnO 25 mol% and Fe$_2$O$_3$ 51 mol% added MnO$_3$ 400 ppm, SiO$_2$ 100 ppm and CaO 200 ppm since the uniform grains were organized and the microstructures were compacted through reduction of pores. The permeability was increased up to 13,904 as temperature of specimen increased to 11$0^{\circ}C$, however, it was decreased precipitously under 100 over 11$0^{\circ}C$. The exothermic behavior was observed in the frequency range from 1 kHz to 1 MHz that the maximum temperature of specimens became 102$^{\circ}C$ at 1 MHz. In the consequence, the Mn-Zn ferrite core developed by this research will maintain the stable electromagnetic properties since the temperature of ferrite core rose to 93$^{\circ}C$ in the range of 10 kHz to 450 kHz bandwidth qualified for PLC.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.31-36
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• 1994

The bonding behavior of $SiO_{2}$ thin film and glass during VCR head fabrication was investigated, varying the surface roughness of substrate and the sputtering parameter. Insufficient fillings of grooves In the $SiO_{2}$ film with glass was postulated to give rise to the generation of bubble in the glass. The surface roughness of $SiO_{2}$ film was found to depend on that of substrate. The lower the deposition rate, the smoother the surface of film. The bubble free glass after bonding could be obtained using substrate polished with 0.05$\mu\textrm{m}$ $Al_2O_3$ powder under the sputtering condition of 10% oxygen pressure.

• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.72-76
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• 2015

150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{\times}10^{-3}{\Omega}-cm$, carrier concentration of $8.84{\times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.

• Journal of the Korean Chemical Society
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• v.33 no.4
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• pp.357-365
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• 1989

The positional parameters of framework atoms, cations, and water molecules in hydrated and dehydrated $Mg_4Na_4-A$, $Ca_6-A$, $Zn_5Na_2-A$ and $Co_4Na_4-A$ were determined by the optimization technique using some potential energy functions and VAIOA optimization program. Upon dehydration, cations in hydrated states move toward the framework oxygens of 6 rings. Frameworks of fully dehydrated zeolite A are more stable than those of fully dehydrated divalent cation exchanged Zeolite A. There are three different kinds of water molecules in divalent cation exchanged Zeolite A; W(III) (water molecules having hydrogen bonds), W(II) (water molecules associated with $Na^+$ ions), and W(I) (water molecules associated with divalent cations). Three different DTA endothermic peaks were observed corresponding to the dehydration of three different kinds of water molecules in divalent cation exchanged Zeolite A.

• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.341-346
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• 2014

Ga-doped ZnO (GZO) single layer and $SiO_2/GZO$ bi-layered films were deposited on Polycarbonate(PC) substrate by radio frequency magnetron sputtering. Influence of the structural, electrical, and optical properties of the films was considered. We have considered the influence of electron irradiation energy of 450 and 900 eV on the stuctural, electrical and optical properties of $SiO_2/GZO$ thin films. The optical transmittance in a visible wave length region increased with the electron irradiation energy. The electrical resistivity of the films were dependent on the electron's irradiation energy. The $SiO_2/GZO$ films irradiated at 900 eV were showen the lowest resistivity of $7.8{\times}10^{-3}{\Omega}cm$. The film which was irradiated by electron at 900 eV shows 84.3% optical transmittance and also shows lower than contact angle of $58^{\circ}$ in this study.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.262-266
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• 2010

ZnO nanostructures were grown on an Au seed layer by a hydrothermal method. The Au seed layer was deposited by ion sputter on a Si (100) substrate, and then the ZnO nanostructures were grown with different precursor concentrations ranging from 0.01 M to 0.3M at $150^{\circ}C$ and different growth temperatures ranging from $100^{\circ}C$ to $250^{\circ}C$ with 0.3 M of precursor concentration. FE-SEM (field-emission scanning electron microscopy), XRD (X-ray diffraction), and PL (photoluminescence) were carried out to investigate the structural and optical properties of the ZnO nanostructures. The different morphologies are shown with different growth conditions by FE-SEM images. The density of the ZnO nanostructures changed significantly as the growth conditions changed. The density increased as the precursor concentration increased. The ZnO nanostructures are barely grown at $100^{\circ}C$ and the ZnO nanostructure grown at $150^{\circ}C$ has the highest density. The XRD pattern shows the ZnO (100), ZnO (002), ZnO (101) peaks, which indicated the ZnO structure has a wurtzite structure. The higher intensity and lower FWHM (full width at half maximum) of the ZnO peaks were observed at a growth temperature of $150^{\circ}C$, which indicated higher crystal quality. A near band edge emission (NBE) and a deep level emission (DLE) were observed at the PL spectra and the intensity of the DLE increased as the density of the ZnO nanostructures increased.