• 천문학회보
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• 제35권1호
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• pp.51.1-51.1
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• 2010

We present the interim results of simultaneous observations of SiO and H2O masers toward 401 known stellar SiO and/or H2O maser sources (166 both SiO and H2O maser sources, 83 only SiO maser sources, and 152 only H2O maser sources) using KVN_Yonsei telescope. The results of 166 known SiO/H2O maser sources will be presented by Kim et al. and the results of 83 only SiO maser sources and 152 only H2O maser sources presented here. Both SiO and H2O maser emission were detected from 30 sources giving a detection rate of 36 % toward known 83 only SiO maser sources, while they were detected from 66 sources giving a detection rate of 43 % toward known 152 only H2O maser sources at one epoch observation. Only SiO masers were detected from 42 sources toward 83 only SiO sources, while they were detected from 28 sources toward 152 only H2O sources. Characteristics of these observed sources in the IRAS two-color diagram is investigated including mutual relations between SiO and H2O maser emission. In addition, these results will be useful for statistical study of late-type stars and future VLBI observations.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
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• pp.191-202
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• 2005

비정질 실리콘 태양전지 대신에 열화가 더 적은 프로터결정 실리콘(pc-Si:H)을 상층전지 흡수층으로 사용한 고효율 실리콘계 적층형(pc-Si:H/$\mu$c-Si:H) 박막 태양전지를 개발하였다. 우선, 높은 전도도와 넓은 에너지 밴드갭 특성을 갖는 p-a-SiC:H 박막을 개발하였고, p/i 계면의 특성 향상을 위해 p-nc-SiC:H 완충층을 개발하였다. 프로터결정 실리콘 다층막을 제작하고 FTIR, 평면 TEM, 단면 TEM 측정을 통해 프로터결정 실리콘 다층막의 우수한 열화 특성의 원인을 규명하였다. 적층형 태양전지의 성능향상을 위해 n-p-p 구조의 터널접합을 제안, 제작하고 특성을 분석하였으며, pc-Si:H/a-Si:H 적층형 태양전지에 적용하여 성능향상을 이루었다. 양질의 하층전지용 마이크로결정 실리콘 박막을 증착하기 위하여 광CVD법과 플라즈마CVD법을 결합한 2단계 마이크로결정 실리콘 증착법을 개발하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.383-383
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• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.410-410
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• 2010

한TFT-LCD, Solar cell, 반도체 등에 사용되는 Si 박막은 주로 PECVD로 형성한다. 이 때 사용되는 원료 가스로 $SiH_4$가 있으며 대개 $H_2$로 희석해서 사용한다. 저온 증착의 경우 전자 충돌 해리과정을 이용하여 증착이 이루어지며 이 때 중간 생성물로 $SiH_3$, $SiH_2$와 고차유도체($Si_xH_y$)가 생성된다. 고밀도 플라즈마를 이용하는 경우에는 이들의 이온(양, 음)의 비율도 막질 형성에 중요한 요소가 된다. 본 발표에서는 안테나가 외부 및 내부에 있는 경우에 대해서 모델링하였으며 해리된 유도체의 비율은 $SiH_3$ > $SiH_2$의 순서였고 가스 조성비(수소 희석비), U-type 내장형 안테나와 기판 사이의 거리, 챔버 내의 펌핑 포트의 위치 등에 의한 차이가 플라즈마 온도 및 밀도의 균일도에 미치는 영향을 분석하였다. 수치 모델상의 가장 중요한 변수의 하나인 이온, 라디칼의 표면 재결합 상수는 문헌에서 보고된 값을 구하기 어려운 경우에는 가장 실제와 근접한 경향이 나타나는 값을 사용하였다. 이 부분은 분자 동력학 등의 기법을 이용하여 보다 상세한 데이터를 만들어 낼 수 있는 방법의 적용이 필요하다. 기본적인 $SiH_4$의 화학 반응식은 이원기[1]등의 데이터를 이용하였다. 계산 결과 중의 특이한 점의 하나는 고차 유도체인 $Si_2H_4$의 경우 중성보다 오히려 양이온의 밀도가 1 order이상 높았다. 내장형 Y-type 안테나의 경우 전력 흡수 밀도가 $10^7\;W/m^3$ 수준으로 높은 영역이 안테나 주변으로 나타났으며 안테나와 기판 사이의 거리와 압력에 따라서 기판에서의 균일도가 결정 되었다.

• 한국결정성장학회지
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• 제7권3호
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• pp.393-399
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• 1997

승화법에 의한 6H-SiC 단결정의 최적 성장조건을 설정하여 고품질의 6H-Sic 단결정을 성장하였다. 성장된 결정의 직경은 약 33 mm, 길이는 약 11 mm였다. 성장된 결정을 절단하여 연마한 후 광학현미경을 이용하여 연마된 SiC wafer의 micropipe density와 planar defect density를 측정한 결과, micropipe density는 400개/$ \textrm{cm}^2$이었고 planar defect density는 50개/$\textrm{cm}^2$이었다. 이 6H-SiC wafer와 기판으로 사용된 Acheson 결정의 결정성을 비교하기 위하여 Raman 분광법과 double crystal X-ray diffraction 분석법이 사용되었다. 이 분석에 의해 승화법에 의해 성장된 6H-SiC wafer가 Acheson seed보다 결정성이 우수하였다. Hall effect 측정법에 의해 불순물이 첨가되지 않은 6H-SiC wafer의 전기적인 특성을 측정하였으며 그 결과 캐리어 농도는 $3.91{\times}10^{15}/\textrm {cm}^3$이었고, n-type이었다.

• 대한금속재료학회지
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• 제47권5호
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• 천문학회보
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• 제35권1호
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• pp.51.2-51.2
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• 2010

We have carried out an extensive statistical analysis based on the results of simultaneous observations of SiO and $H_2O$ masers toward 166 known SiO and $H_2O$ maser sources using KVN_Yonsei radio telescope (Kim et al.2010, ApJS submitted). We investigate the distributions of the mean velocities and the intensity ratios between SiO and $H_2O$ maser emission including those between SiO v=1 and v=2,J=1-0 transitions according to type of evolved stars. We also investigate mutual relations between SiO and $H_2O$ maser properties(total flux densities and velocity structures etc.) according to stellar pulsation phases. Most of SiO masers appear around the stellar velocity (80 % within ${\pm}5km\;s^{-1}$), while $H_2O$ masers show a different characteristic compared with SiO masers (69% within ${\pm}5km\;s^{-1}$). In addition, we investigate a correlation between $SiO/H_2O$ maser emission and AKARIFIS flux density as well as the AKARI color characteristics of SiO and $H_2O$ observational results in the AKARIFIS two-color diagram.

• 한국표면공학회지
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• 제53권5호
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• pp.201-206
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• 2020

A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO₂-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO₂-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).

• Bulletin of the Korean Chemical Society
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• 제24권6호
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• pp.723-727
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• 2003

Recently the ab initio effective valence shell Hamiltonian method $H^v$ has been extended to treat spin-orbit coupling in atoms or molecules. The quasidegenerate many-body perturbation theory based $H^v$ method has an advantage of determining the spin-orbit coupling energies of all valence states for both the neutral species and its ions with a similar accuracy from a single computation of the effective spin-orbit coupling operator. The new spin-orbit $H^v$ method is applied to calculating the fine structure splittings of the valence states of SiH, $SiH^+$, and $SiH^{2+}$ not only to assess the accuracy of the method but also to investigate the spin-orbit interaction of highly excited states of SiH species. The computed spin-orbit splittings for ground states are in good agreement with experiment and the few available ab initio computations. The ordering of fine structure levels of the bound and quasi-bound spin-orbit coupled valence states of SiH and its ions, for which neither experiment nor theory is available, is predicted.

• Journal of information and communication convergence engineering
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• 제5권1호
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.