• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.317-323
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• 1999

Si3N4-TiC composites have been known as electrically conductive ceramics. $Si_3N_4-TiC$ composites with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ were hot pressed in $N_2$ environment. The mechanical properties including hardness, fracture toughness, and flexural strength and tribological properties were investigated as a function of TiC content. $Si_3N_4-40$ vol% TiC composite was hot pressed at $1,750^{\circ}C$, $1,800^{\circ}C$, and $1,850^{\circ}C$ for 1, 3 and 5 hours in $N_2$ gas. Mechanical and tribolgical properties depended on microstructures, which were controlled by hte TiC content, hot press temperature, and hot press holding time. However, mechanical properties and tribological behaviors were degraded by the chemical reaction between TiC and N. The chemically reacted products such as TiCN, SiC, and $SiO_2$ were detered by the X-ray diffraction analysis.

• Journal of Photoscience
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• v.9 no.1
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• pp.17-22
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• 2002

Studies have been conducted to explore photoaddition reactions of N-methylthiophthalimide with $\alpha$-silyl-n-electron donors Et$_2$NCH$_2$SiMe$_3$, n-PrSCH$_2$SiMe$_3$ and EtOCH$_2$SiMe$_3$. Photoaddition of $\alpha$-silyl amine Et$_2$NCH$_2$SiMe$_3$ to N-methylthiophthalimide occurs in $CH_3$CN and benzene to produce non-silicon containing adduct in which thiophthalimide thione carbon is bonded to $\alpha$-carbon of $\alpha$-silyl amine in place of the trimethylsilyl group. In contrast, photoaddition of EtOCH$_2$SiMe$_3$ to N-methylthiophthalimide generates two diastereomeric adducts in which thiophthalimide thione carbon is connected to $\alpha$-carbon of $\alpha$-silyl ether in place of u-hydrogen. Based on a consideration of the oxidation potentials of u-silyl-n-electron donors and the nature of photoadducts, mechanism for these photoadditions involving single electron transfer(SET) -desilylation and H atom abstraction pathways are proposed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.243-243
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• 2010

$CN_x$ films fabricated by different deposition techniques to synthesize of $\beta-C_3N_4$ involve two problems; nitrogen deficiency and $sp^2$ hybridized bonding. Nitrogen contents in most of the thin films are lower than stoichiometric composition 57%

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.97-103
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• 2007

Crystallized carbon nitride film that has many stable physical and/or chemical properties has been expected potentially by a new electrical material. However, one of the most significant problems degrading the quality of carbon nitride films is an existence of N-H and C-H bonds from the deposition environment. The possibility of these reactions with hydroxyl group in carbon nitride films, caused by a hydrogen attack, was suggested and proved in our previous reports that this undesired effect could be applied for fabricating micro-humidity sensors. In this study, MIS capacitor and MIM capacitor with $5{\mu}m{\times}5{\mu}m$ meshes were fabricated. As an insulator, carbon nitride film was deposited on a $Si_{3}N_{4}/SiO_{2}/Si$ substrate using reactive magnetron sputtering system, and its dielectric constant, C-V characteristics and humidity sensing properties were investigated. The fabricated humidity sensors showed a linearity in the humidity range of 0 %RH to 80 %RH. These results reveal that MIS and MIM $CN_{X}$ capacitive humidity sensors can be used for Si based micro-humidity sensors.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.110-114
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• 2006

Dielectric properties of glass-ceramics with fresnoite(Ba2TiSi208) crystals have been investigated in xK20-(33.3-x)BaO-16.7TiO2-50SiO2 ($0{\leq}x{\leq}20mol%$) glasses. The glassy nature was analyzed by differential thermal analyses and glass-ceramics was variable and control table by the processing parameters like time and temperature. Dielectric constant was measured over a temperature from 125K to 425k at frequencies form 100Hz to 1MHz, and laid in the range 16-10. Piezoelectric constant d33 was measured using a YE2703A d33meter and changed from 5.9 to 4.8pCN-1 with x contents. The spontaneous polarization Ps estimated from the hysteresis at ${\pm}1.2kV$ was ${\sim}0.3\;{\mu}C/cm2$ at room temperature.

• Journal of the Korean Chemical Society
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• v.24 no.3
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• pp.250-258
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• 1980

Various radicals may add to isonitriles to give imidoyl radcals RN=CR'. This may be also generated via abstraction of imidoyl hydrogen from imine in the following manner: RN=CR' ＋ R"${\cdot}{\rightarrow}$ RN=CR' ＋ R"-H Imidoyl radicals would be stabilized via two pathways, ${\beta}$-cleavage and atom transfer reactions. ${\beta}$-Cleavage may occur in two directions depending upon structure of the radicals. Cyanide transfer and the "so-called" normal ${\beta}$-cleavage are the two modes of ${\beta}$-cleavage. Addition of t-butoxy radical to t-butyl isocyanide 7 generates an imidoyl radical t-Bu-N=C-O-Bu-t, which undergoes ${\beta}$-cleavage to give t-butyl isocyanate and t-butyl radical. Addition of phenyl radical to 7 forms the intermediate radical t-Bu-N=$C-C_6H_5$, which decomposes to give benzonitrile and t-butyl radical. The t-butyl radical generated from the ${\beta}$-cleavage adds to 7 giving the radical t-Bu-N=C-Bu-t, which cleaves only to pivalonitrile and t-butyl radical, inducing radical chain isomerization. Trimethylsilyl radical adds to 7 to give the intermediate t-Bu-N=$C-Si(CH_3)_3$, which collapses to $(CH_3)_3$SiCN and a t-butyl radical.

• Journal of the Korean earth science society
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• v.38 no.1
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• pp.49-63
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• 2017

The geochemical results of the Chunyang granites located in the northeastern part of the Yeongnam Massif, indicate that these rocks have characteristics of calc-alkaline series in the sub-alkaline field, I-type and peraluminous. Most of the geochemical features in major and trace elements show systematic trends, which are similar to differentiation trends of the general Jurassic granitoids in South Korea. The Chunyang granite is largely enriched in mobile LILE (Sr, K, Rb and Ba) relatively immobile HFSE. They show LREE enriched patterns [$(La/Lu)_{CN}=41.8-73.2$] with a slightly negative Eu anomaly [$(Eu/Eu^*)_{CN}=0.89-1.10$]. There are no meaningful correlations in major and trace elements between the Chunyang granites and the Buseok plutonic rock which is the main unit of the Yeongju batholith. This result may suggest that these two plutonic rocks be not derived from the same parent magma. Tectonic discrimination diagrams indicate that the Chunyang granite was formed in volcanic arc environments. These geochemical characteristics results suggest that the Chunyang granite must have been generated at the active continental margin during the subduction of the Jurassic proto-Pacific plate.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.87-87
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• 2000

이온빔 증착에 있어서 전자의 조사가 이온빔 증착기구에 미치는 영향에 대한 연구는 지금까지 보고 되어지지 않았다. 특히 전자의 조사가 증착층의 물성에 영향을 미칠 수 있느지에 대하여 정량적인 결과를 실험을 통하여 제시한 보고는 내가 아는 한 존재하지 않는다. 한편 이와같이 박막 증착에 있어서 전하가 증착되어지는 박막의 물성에 미칠 수 있는 영향에 대해서는 많은 과학자들의 관심사이기도 하다. 본 실험에서는 kaufman ion gun을 이용하여 질소 양이온을, 그리고 Cs+ ion gun을 이용하여 탄소 음이온을 조사하고 이들을 이용하여 CN 박막을 증착하였다. 질소 양이온의 에너지는 100eV, 이온밀도는 70$\mu$A/$\textrm{cm}^2$로 고정하고, 탄소 이온빔(80$\mu$A/$\textrm{cm}^2$)의 에너지를 200cV까지 변화시켜가며 증착하였다. 이때 증착층의 특성에 음 전하의 효과를 유발하기 위하여 350~360$\mu$A/$\textrm{cm}^2$의 전자빔을 이온빔 증착과 동시에 추가로 조사하였고 이의 특성을 전자빔을 조사하지 않고 증착한 CN 박막의 특성과 서로 비교하였다. 또한 증착 표면의 전하 축적에 의한 입사 이온빔의 에너지 감소에 의한 영향을 방지하기 위하여 증착되는 Si 기판에 HF (300kHz, 3.5V) bias를 가하여 주었다. 전자빔의 조사와 동시에 이루어진 CN 박막의 증착은 입사하는 탄소 음 이온빔의 에너지가 80eV에서 180eV 사이일때 원자밀도의 향상과 질소함량의 증가, 그리고 sp2C-N 결합대비 sp3C-N 결합의 향상이 이루어졌음을 확인하였다. 이는 이온빔 충돌에 의하여 피코쵸 정도의 시간대에 이루어지는 박막내의 collision cascade 영역에 이에 의하여 생긴 결함부위에 유입된 음 전하가 위치하면 전하주위의 원자와 polarization을 형성하고 이에 의하여 탄소와 질소의 결합을 형성하는데 필요한 자유에너지의 감소를 수반하는 방향으로 원자의 배열이 이루어지기 때문으로 사료된다. 이와같이 이온빔 에너지가 이온빔 증착 기구의 주요한 인자로 널리 인식되고 있는 kinetic bonding process에 있어서 이온 에너지에 의하여 activation energy barrier를 넘은후, 전자의 조사가 자유에너지를 낮추는 방향으로 최종 결합경로를 조절할 수 있기 때문에 이온빔 증착을 조절할 수 있는 또 하나의 주요한 인자로 받아들여질 수 있으리라 판단된다. 이온빔 프로세스에 의한 DLC 혹은 탄소관련 필름을 형성하는데 있어서 입사 이온빔의 에너지에 의하여 수반되는 thermal spike 혹은 외부 열원에 의한 가열은 박막층의 흑연화를 수반하기 때문에 박막의 sp3 특성을 향상시키기 위하여 회피하여야 할 요소이지만 thermal spike에 의한 국부 영역의 가열과 같은 불가피한 인자가 존재하는 상황에서 전자에 의한 추가 전하의 조사에 의한 최종결합경로의 선택적 조절은 박막의 화학적 결합과 물리적 특성을 향상시킬 수 있는 중요한 방법이 될 수 있다고 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.247-248
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• 2006

Carbon nitride films were evaluated that they had many advantages for miniature micro-humidity-sensors using the standard CMOS technology humidity sensing properties and CV characteristics of the carbon nitride films have been investigated for fabricating one chip HUSFET(Humidity Sensitive Field Effect Transistor) humidity sensors Carbon nitride films were deposited on silicon substrate with meshed electrodes by reactive RF magnetron sputtering system. The capacitor-type humidity sensor revealed good humidity-impedance characteristics with a wide range of relative humidity changes, decreasing $254k{\Omega}$ to $16k{\Omega}$ according to increase of relative humidity between 5% ~ 95% and the films were very stable on the Si wafer. These results reveal that $CN_x$ thin films can be used for Si based or HUSFET structure one chip micro-humidity sensors.

• Journal of The Korean Society of Agricultural Engineers
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• v.55 no.4
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• pp.73-82
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• 2013

The main objective of this study was to evaluate Representative Concentration Pathways (RCP) scenarios-based flood risk at a Si-Gun level. A bias correction using a quantile mapping method with the Generalized Extreme Value (GEV) distribution was performed to correct future precipitation data provided by the Korea Meteorological Administration (KMA). A series of proxy variables including CN80 (Number of days over 80 mm) and CX3h (Maximum precipitation during 3-hr) etc. were used to carry out flood risk assessment. Indicators were normalized by a Z-score method and weighted by factors estimated by principal component analysis (PCA). Flood risk evaluation was conducted for the four different time periods, i.e. 1990s, 2025s, 2055s, and 2085s, which correspond to 1976~2005, 2011~2040, 2041~2070, and 2071~2100. The average flood risk indices based on RCP4.5 scenario were 0.08, 0.16, 0.22, and 0.13 for the corresponding periods in the order of time, which increased steadily up to 2055s period and decreased. The average indices based on RCP8.5 scenario were 0.08, 0.23, 0.11, and 0.21, which decreased in the 2055s period and then increased again. Considering the average index during entire period of the future, RCP8.5 scenario resulted in greater risk than RCP4.5 scenario.