• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1774-1777
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• 1996

In this paper, applicability of SI-PD(switching impulse - partial discharge) testing method was put on an attempt as a newly proposed diagnostic method for the underground distribution power cable system in Korea. For this purpose, SI-PD testing equipment was designed, and tests were performed using artificial needle-type defects integrated into the 22.9 kV CN/CV cables in drder to prove its reliability. As a result, arc noises, generated from spark gap, were considerably decreased by use of a pneumatic switch immersed into oil, and artificial needle-type defects were well detected with impulse voltage level under $2U_0$. These results imply that it is likely possible to apply SI-PD measurement method as a the nondistructive test for the 22.9 kV CN/CV cable system in Korea.

• 한국전자현미경학회:학술대회논문집
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• 1999.05a
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• pp.34-39
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.83-83
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• 2008

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.324-330
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• 1999

$Si_3N_4$-$TiB_2$ with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ additives was hot pressed in a flowing $N_2$ environment with varying $TiB_2$ content from 10 to 50 vol%. Variations of mechanical (hardness, fracture toughness, and flexual strength), and tribological properties as a function of $TiB_2$ content were investigated. As the content of $TiB_2$ increased, relative density decreased due to the chemical reaction of $TiB_2$in $N_2$ environment. The reduction of density causes mechanical properties to be degraded with an increase of $TiB_2$ in $Si_3N_4$. Tribological properties were dependent of microstructure as well as mechanical properties, however, they were degraded strongly by the chemical reaction of $Si_3N_4$-$TiB_2$ during hot pressing in $N_2$ environment. SEM and TEM observations, and X-ray diffraction analysis that the chemical reaction products at the interface are TiCN, Si, and $SiO_2$. Also, the comparison of XRD patterns of the $Si_3N_4$-40 vol% $TiB_2$ composites hot pressed at $1,750^{\circ}C$ for 1 hour between in $N_2$ and in Ar gas was made. The XRD peaks of Si and $SiO_2$ were not found in Ar, but still a weak peak of TiCN was presented.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.296-296
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• 2006

Highly temperature stable mesoporous materials have excellent properties and potential applications. Here we show a novel poly(vinyl)silazane-block-polystyrene diblock copolymer, which was synthesized by controlled/living free radical polymerization with reversible addition fragmentation chain transfer (RAFT) route. The obtained diblock copolymer occurs the phaseseparation on the nanoscale to form ordered nanostructure, which is converted to mesoprorous ceramic after heating at 800oC. This route demonstrates the preparation of highly temperature stable mesoporous silicon carbon nitrides (SiCN) ceramic film directed from highly cross-linking poly(vinyl)silazane blocks with high ceramic yield, which is different from previous pathway.

• Bulletin of the Korean Chemical Society
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• v.8 no.5
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• pp.362-366
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• 1987

Modification of n-Si electrodes coated by photogalvanostatically with polyaniline and polypyrrole in aqueous solutions considerably enhanced the stability and the spectral response of the photoelectrodes. A polypyrrole coated electrode incorporated with redox couple $Fe(CN)_{6}^{3-_6}$ / $Fe(CN)_{6}^{4-_6}$ yielded a photocurrent density of 400${\mu}A/cm^2$ for about 120 hours. Broad spectral responses over 300-850 nm were observed for both polymer coated electrodes of which polypyrrole coated one showed better current conversion efficiency.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.24.1-24.1
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.379-379
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• 2010

Recent technical advances in OLEDs (organic light emitting devices) requires more and more the improvement in low operation voltage, long lifetime, and high luminance efficiency. Inverted top emission OLEDs (ITOLED) appeared to overcome these problems. This evolved to operate better luminance efficiency from conventional OLEDs. First, it has large open area so to be brighter than conventional OLEDs. Also easy integration is possible with Si-based driving circuits for active matrix OLED. But, a proper buffer layer for carrier injection is needed in order to get a good performance. The buffer layer protects underlying organic materials against destructive particles during the electrode deposition and improves their charge transport efficiency by reducing the charge injection barrier. Hexaazatriphenylene-hexacarbonitrile (HAT-CN), a discoid organic molecule, has been used successfully in tandem OLEDs due to its high workfunction more than 6.1 eV. And it has the lowest unoccupied molecular orbital (LUMO) level near to Fermi level. So it plays like a strong electron acceptor. In this experiment, we measured energy level alignment and hole current density on inverted OLED structures for hole injection. The normal film structure of Al/NPB/ITO showed bad characteristics while the HAT-CN insertion between Al and NPB greatly improved hole current density. The behavior can be explained by charge generation at the HAT-CN/NPB interface and gap state formation at Al/HAT-CN interface, respectively. This result indicates that a proper organic buffer layer can be successfully utilized to enhance hole injection efficiency even with low work function Al anode.

• Food Science and Preservation
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• v.22 no.4
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• pp.553-558
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• 2015

The aims of this study was to optimize the extraction conditions of sinigrin from Dolsan leaf mustard. Dolsan leaf mustard (Dolsan-eup, Yeosu-si) harvested during at May 2014 was used for sinigrin extraction. After the extraction of sinigrin using 50% $CH_3CN$, 10% $NH_4Cl$, 60% $CH_2OH$, and 70% $CH_3OH$, the sinigrin content was measured by HPLC analysis. The results showed that sinigrin content was highest with 50% $CH_3CN$ solvent extraction and UV detector sensitivity was greater at 228 nm rather than at 242 nm. The sinigrin concentrations of leaf, stem and root with 50% $CH_3CN$ extraction were 345 ppm, 728 ppm, and 539 ppm, respectively. After extraction of the different parts of Dolsan leaf mustard, The standard retention time by HPLC analysis of sinigrin content was 2.054, 2.032, 2.059, and 2.035 min from the root, stalk, and leaf, respectively. On the other hand, HPLC analysis showed that the leaf extracts contained glucoraphanin, one of glucosinolates. The optimum time and extraction solvent for the sinigrin extraction from Dolsan leaf mustard was found to be 24 hr with 50% $CH_3CN$ solvent. In addition, opotimum UV detector k at 228 nm. These results showed that the optimum extraction conditions for Dolsan leaf mustard were 24 hr extraction with 50% $CH_3CN$ solvent. In addition, the optimum wavelength of UV detector was determined to be 228 nm for sinigrin analysis. Therefore, this study could provide a useful information for sinigrin extraction and its systematic analysis during the storage.