• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.2
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• pp.56-60
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• 2003

In this work, we have fabricated thin film resistors using the DC/RF magnetron sputter of 51wt%Ni-41wt%Cr-8wt%Si alloy target and studied the effect of the process parameters on the electrical properties. In fabrication process, sputtering power, substrate temperature and annealing temperature have been varied as controllable parameters. TCR decreases with increasing the substrate temperature, but TCR increases over 300 [$^{\circ}C$]. The films are annealed to 400 [$^{\circ}C$] in air atmosphere, TCR increases with increasing the annealing temperature. The resistivity was 172 [${\mu}{\Omega}{\cdot}cm$] and 209 [${\mu}{\Omega}{\cdot}cm$] for the RF and DC as a sputtering power sources, respectively. Also, TCR was -52 [$ppm/^{\circ}C$] and -25 [$ppm/^{\circ}C$]. As a results of them, it is suggested that the sheet resistance and TCR of thin films can be controlled by variation of sputter process parameter and annealing of thin film.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.48-53
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• 2002

Ferroelectric $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{1-x}Ti_x]_{0.98}Nb_{0.02}O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3$(LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films with various composition ratio were investigated. The thin films deposited at the substrate temperature of $500^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA) at $650^{\circ}C$ for 10 seconds in air. A PNZST thin films with Ti of 10 mole% showed the good crystallinity and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about $20\;{\mu}C/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.373-379
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• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.199-209
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• 1994

$PbTiO_3$ thin films were prepared on soda-lime-silica slide glasses, Si-wafer and sapphire substrate by the dip-coating of precursor solution. As starting materials, titanium tetra iso-propoxide and lead acetate trihydrate were used. Then acetylacetone was added to prepare stable sol. The effect of the parameters such as viscosity and composition of sol were investigated. The optical transmittance at visible range, refractive index, IR spectra were measured in varying compositions, thickness and heat treatment temperature. The crystallization of $PbTiO_3$ films were measured by using XRD and SEM. Diffusion of compositions from slide glass to thin film were investigated by using EDX, too. These sols not precipitated for 20 days. Transmittance of $PbTiO_3$ films at visible range were decreased with the increase of thickness and heat treatment temperatures, and were exhibited flat spectra. Pyrochlore type appeared in the films on slide glass and perovskite type appeared in the films on Si-wafer or sapphire at $600^{\circ}C$. Perovskite crystals transformed to $PbTi_3O_7$ phase at $800^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.829-834
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• 2002

Ferroelectric properties of $ErMnO_3$ thin films deposited on Si(100) substrate using Sol-gel process with metal salts were investigated. $ErMnO_3$ thin films with a (001) preferred orientation were crystallized at 800$^{\circ}C$. The $ErMnO_3$ thin film post-annealed at 800$^{\circ}C$ for 1 h showed the dielectric constant(k) of 26 and the dielectric loss(tan ${\delta}$) of 0.032 at the frequency range from 1 to 100 KHz. The grain size of $ErMnO_3$ thin film post-annealed at 800 for 1 h was 10∼30 nm. The remanent polarization($P_r$) of the $ErMnO_3$ thin films increased with increasing (001) preferred orientation. The $ErMnO_3$ thin films post-annealed at 800$^{\circ}C$ for 1 h showed the remanent polarization($P_r$) of 400 nC/$cm^2$, with the increase of post-annealing time at 800$^{\circ}C$, the coercive field($E_c$) of thin films was lowered because the dense and homogeneous thin films were obtained.

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.960-964
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• 2001

$Bi_{3.99}Ti_{2.97}V_{0.03}O_{12}$ (BTV) thin films with 3 mol% vanadium doping were Prepared on $Pt/Ti/SiO_2/Si$ substrate by sol-gel method. X-ray diffraction analysis indicated that single-phase layered perovskite were obtained and preferred orientation was not observed. Under the annealing temperature at $600^{\circ}C$, the surface morphology of the BTV thin films had fine-rounded particles and then changed plate-like at $650^{\circ}C$ and $700^{\circ}C$. The remanent polarization $(2P_r)$ and coercive field $(2E_c)$ of $700^{\circ}C$ annealed BTV thin film were 25 $\mu$C/cm$^2$ and 116 kV/cm, respectively. In addition, BTV thin film showed little polarization fatigue during $10_9$ switching cycles. These improved ferroelectric properties were attributed to the increased rattling space and reduced oxygen vacancies by substitution $Ti^{4+}$ ion (68 pm) with smaller $V^{5+}$ ion (59 pm). The dielectric constant and loss were measured 130 and 0.03 at 10 kHz, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.236-236
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• 2011

Silicon oxynitride (SiON) was deposited for gas barrier film on polyethylene terephthalate (PET) using octamethylycyclodisiloxane (Si4O4C8H24, OMCTS) precursor by plasma enhanced chemical vapor deposition (PECVD) at low temperature. The ion flux and substrate temperature were measured by oscilloscope and thermometer. The chemical bonding structure and barrier property of films were characterized by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR), respectively. The deposition rate of films increases with RF bias and nitrogen dilution due to increase of dissociated precursor and nitrogen ion incident to the substrate. In addition, we confirmed that the increase of nitrogen dilution and RF bias reduced WVTR of films. Because, on the basis of FT-IR analysis, the increase of the nitrogen gas flow rate and RF bias caused the increase of the C=N stretching vibration resulting in the decrease of macro and nano defects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.258-258
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• 2008

Among several available high-k dielectrics the lanthanum zirconium oxide ($LaZrO_x$) system is very attractive as a buffer insulating layer. Because both lanthanum and zirconium atoms, the constituents of the $LaZrO_x$ thin film, have been considered to be thermally stable in contact with Si. The $LaZrO_x$ films were deposited by a sol-gel method. After the deposition, The $LaZrO_x$ films were crystallized at $750^{\circ}C$ for 30 minutes in $O_2$ ambient. PVDF-TrFE films were deposited on these $LaZrO_x$/Si structures using a sol-gel technique. The sol-gel solution was spin-coated on $LaZrO_x$/Si structures at 500 rpm for 5 sec and 2500 rpm for 15 sec. The deposited layer was dried at $165^{\circ}C$ for 30 min in air on a hot-plate. Then, we deposited Au electrode on PVDF-TrFE films using thermal evaporation.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.742-749
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• 2002

The PZT thin films werre deposited on Pt/Ti/$SiO_2$/Si substrate by R. F. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target. When interlayers(PbO, $TiO_2$, PbO/$TiO_2$) were inserted between PZT and Pt, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. Compared to the pure PZT thin films, dielectric constant, dielectric loss and polarization properties of PZT thin films with interlayers were considerably improved. From XPS depth profile analysis, it was confirmed that PZT thin films and interlayers existed independently. In particular, PZT thin films deposited on interlayer(PbO/$TiO_2$) showed the best dielectric property (${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$).

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.601-606
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• 2000

Nickel mono-silicide(NiSi) shows no increase of resistivity as the line width decreases below 0.15$\mu\textrm{m}$. Furthermore, thin silicide can be made easily and restrain the redistribution of dopants, because NiSi in created through the reaction of one nickel atom and one silicon atom. Therefore, we investigated the deposition condition of Ni films, heat treatment condition and basic properties of NiSi films which are expected to be employed for sub-0.15$\mu\textrm{m}$ class devices. The nickel silicide film was deposited on the Si wafer by using a dc-magnetron sputter, then annealed at the temperature range of $150~1000^{\circ}C$. Surface roughness of each specimen was measured by using a SPM (scanning probe microscope). Microstructure and qualitative composition analysis were executed by a TEM-EDS(transmission electron microscope-energy dispersive x-ray spectroscope). Electrical properties of the materials at each annealing temperature were measured by a four-point probe. As the results of our study, we may conclude that; 1. SPM can be employed as a non-destructive process to monitor NiSi/NiSi$_2$ transformation. 2. For annealing temperature over $800^{\circ}C$, oxygen pressure $Po_2$ should be kept below $1.5{\times}10^{-11}torr$ to avoid oxidation of residual Ni. 3. NiSi to $NiSi_2$ transformation temperature in our study was $700^{\circ}C$ from the four-point probe measurement.