• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.147-152
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• 2002

Carbon nitride thin films were deposited by reactive sputtering for the hard coating materials on Si wafer and tool steels. When the nitrogen content of carbon nitride film on tool steel is 33.4%, the mean hardness and elastic modulus are 49.34 GPa and 307.2 GPa respectively. The nitrided or carburised surface acts as the diffusion barrier which shows better adhesion of carbon nitride thin film on the steel surface. To prevent nitrogen diffusion from the film, steel substrate can be saturated by nitrogen forming a Fe$_3$N layer. The desirable structure at the surface after carburising is martensite, but sometimes, due to high carbon content an proeutectoid Fe$_3$C structure may form at the grain boundaries, leaving the overall surface brittle and may cause defects.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.88-96
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• 1994

Hot filament-assisted CVD was carried out to deposit diamond films on Si(100) substrate at 90$0^{\circ}C$ using a 1% CH4-H2 mixture gas. Deposition was made at various conditions of mass flow rate of the feed gas (30~1000 sccm), pressure (2.5~300 Torr), and filament-substrate distance (4~15 mm), and the deposited films were characterized by SEM, XRD, and Raman spectroscopy. As the flow rate increases, the growth rate also increased but the crystallinity of the film was degraded. A longer filament-substrate distance simply caused both the growth rate and the crystallinity to become poorer. On the other hand, the pressure variation resulted in a maximum growth rate of 2.6 ${\mu}{\textrm}{m}$/hr at 10 Torr and the best film quality around 50 Torr, exhibiting an optimum condition. The observed trends were interpreted in terms of the flow velocity-dependent pyrolysis reaction efficiency and mass transport through the boundary layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.383-386
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• 1998

After etching Al-Cu alloy films using SiC1$_4$/Cl$_2$/He/CHF$_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS (X-ray photoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, CHF$_3$ plasma treatment subsequent to the etched has been carried out. A passivation layer is formed by fluorine-related compounds on the etched Al-Cu surface after CHF$_3$ and SF$_{6}$ treatment, and the layer supresses effectively the corrosion on the surface as the CHF$_3$ and SF$_{6}$ treatment pressure increases. The corrosion could be suppressed successfully with CHF$_3$ and SF6 treatment in the pressure of 300mTorr.orr.

• Journal of Magnetics
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• v.16 no.3
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• pp.216-219
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• 2011

Mn doped ZnO films were prepared on Si (100) substrates using sol-gel method. The prepared films were annealed at $550^{\circ}C$ for decomposition and oxidation of the precursors. XRD analysis revealed the presence of ZnMnO hexagonal wurtzite phase along with the presence of small quantity of $ZnMn_2O_3$ secondary phase and poor crystalline nature. The 2D, 3D views of magnetic domains and domain profiles were obtained using magnetic force microscopy at room temperature. Rectangular shaped domains with an average size of 4.16 nm were observed. Magnetic moment measurement as a function of magnetic field was measured using superconducting quantum interference device (SQUID) magnetometry at room temperature. The result showed the ferromagnetic hysteresis loop with a curie temperature higher than 300 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.425-428
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• 1999

In this paper, the electrical properties of Pt/YMnO$_3$/Si(100) structures with difference rapid thermal annealing (RTA) treatment were investigated. YMnO$_3$films were obtained without buffer layers, introducing oxygen. A typical value of the dielectric constant was about 20 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 150kV/cm was about 1.34$\times$10$^{12}$ $\Omega$ . cm. The minimum interface state density around midgap was estimated to be about 5$\times$10$^{11}$ cm$^2$. eV.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1380-1381
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• 2006

본 연구는 MgO 박막을 유도 결합 플라즈마를 이용하여, $CF_4/Ar$ 가스 혼합비로 식각하였고, RF 전력, DC-bais 전압과 Process Pressure를 변경하면서 실험하였다. 빛 방출 분석(optical emission spectroscopy, OES)을 이용하여, 플라즈마 진단과 식각 특성과의 관계를 분석하였다. OES 결과로부터 $CF_4$ 첨가비를 50%까지는 증가시킴에 따라 식각률이 증가하였고, 그 후에 Ar 이온이 감소함으로써 식각률이 감소하였다. MgO 박막의 최고 식각률은 50%의 $CF_4/(CF_{4}+Ar)$에서 700 W의 RF 전력, -150 V의 DC-bias 전압, 반응로 압력은 15 mTorr, 기판 온도는 $30^{\circ}C$로 고정시켰을 때 29nm/min이었다. 이 조건에서 MgO 박막과 $SiO_2$의 선택비는 0.06 이었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.264.1-264.1
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• 2013

Graphene is a two-dimensional carbon material whose structure is one-atom-thick planar sheet of sp2-bonded carbon atoms densely packed in a honeycomb crystal lattice. It has drawn significant attention with its distinguished structural and electrical properties. Extremely high mobility and a tunable band gap make graphene potentially useful for innovative approaches to electronics. Although mechanical exfoliation of graphite and decomposition of SiC surfaces upon thermal treatment have been the main method for graphene, they have some limitations in quality and scalability of as-produced graphene films. Solutionphase and solvothermal syntheses of graphene achieved a major improvement for processing, however for device fabrication, a reproducible method such as chemical vapor deposition (CVD) growth yielding high quality films of controlled thickness is required. In this research, we synthesized hexagonal graphene flakes on Cu foils by CVD method and controlled its coverage, density and the size of graphene domains by changing reaction parameters. It is important to control these parameters of graphene growth during synthesis in order to achieve tunable properties and optimized device performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.703-703
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• 2013

다이아몬드상 탄소 박막(Diamond-like carbon, DLC) 박막은 낮은 마찰 계수, 높은 내마모성, 화학적 안정성, 적외선 영역에서의 높은 투과율 등의 장점을 바탕으로 MEMS (Micro-Electro Mechanical System) 소자와 MMAs (Moving Mechanical Assemblies)의 고체윤활코팅, 마그네틱 미디어와 하드디스크의 슬라이딩 표면 등 다양한 분야에 코팅소재로써 응용되어왔다 [1,2]. 현재 전기철도용 집전판은 마찰이 적고 전도성을 지니는 카본 소재로 구성되어 있다. 그러나 그 마모 비율이 너무 심하여 이를 개선할 수 있는 방안으로 고경도 저마찰력을 지니는 DLC 박막을 코팅 소재로써 제안하고자 한다. 그러나 기존에 DLC 박막은 절연특성이 매우 우수하기 때문에 기존에 전도성을 지니는 카본 집전판에 적용하기에는 어려움이 따른다. 따라서 DLC 박막 내에 실리콘(Si) 또는 금속(Metal)을 첨가시키거나, 금속 중간층을 포함시켜 전기적으로 전도특성을 향상시키는 방안이 제시되고 있으며, 본 연구에서는 DLC 박막과 유사하게 우수한 경도특성을 지니고, 낮은 마찰계수등을 지니는 비정질 탄소박막을 연구하여 카본 집전판에 코팅하고자하며, 특히 비정질 탄소박막에 금속 Ti를 도핑하여 집전판과의 접착력과 전기적 전도 특성을 향상시키고자 한다. Ti가 도핑된 탄소박막(TiC) 박막은 비대칭 마그네트론 스퍼터링(unbalanced magnetron sputtering; UBMS) 시스템을 이용하여 제작하였으며, 스퍼터링 조건 중 기판에 인가되어지는 기판온도에 따라 변화되어지는 TiC 박막의 트라이볼로지(Tribology) 특성을 고찰하고자 하였다. 증착시 기판온도의 증가는 TiC 박막의 경도, 마찰계수 특성등 트라이볼로지 특성을 향상시켰으며, 전기적 전도 특성을 향상시켰다. 이러한 결과는 스퍼터링 방법에 의해 증착되어진 TiC 박막내에 존재하는 sp2 결합과 관계가 있음을 확인할 수 있으며, 트라이 볼로지 특성은 TiC 박막내에 sp2 탄소결합의 비율 증가와 관련되어졌다. 특히 sp2 탄소결합은 TiC 박막 증착시 증가된 기판온도와 밀접한 관계가 있으며 기판온도의 증가에 따라 나노결정 클러스터의 크기와 수의 변화와 밀접한 관계가 있음을 확인하였다. 결국 기판온도는 TiC 박막의 트라이볼로지 특성을 향상시켰으며, 전기적 특성 또한 향상시켜 전기철도 집전판에 응용을 위한 소재로 평가할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.174-174
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• 2000

A strong antiferromagnetic coupling in Fe/Si multilayered films (MLF) had been recently discovered and much consideration has been given to whether the coupling in the Fe/Si MLF system has the same origin as the metal/metal MLF. Nevertheless, the nature of the interfacial ron silicide is still controversial. On one hand, a metal/ semiconductor structure was suggested with a narrow band-gap semiconducting $\varepsilon$-FeSi spacer that mediates the coupling. However, some features show that the nature of coupling can be well understood in terms of the conventional metal/metal multilayered system. It is well known that both magneto-optical (MO) and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In this study, the nature of the interfacial regions is the Fe/Si multilayers has been investigated by the experimental and computer-simulated MO and optical spectroscopies. The Fe/Si MLF were prepared by rf-sputtering onto glass substrates at room temperature with the number of repetition N=50. The thickness of Fe sublayer was fixed at 3.0nm while the Si sublayer thickness was varied from 1.0 to 2.0 nm. The topmost layer of all the Fe/Si MLF is Fe. In order to carry out the computer simulations, the information on the MO and optical parameters of the materials that may constitute a real multilayered structure should be known in advance. For this purpose, we also prepared Fe, Si, FeSi2 and FeSi samples. The structural characterization of Fe/Si MLF was performed by low- and high -angle x-ray diffraction with a Cu-K$\alpha$ radiation and by transmission electron microscopy. A bulk $\varepsilon$-FeSi was also investigated. The MO and optical properties were measured at room temperature in the 1.0-4.7 eV energy range. The theoretical simulations of MO and optical properties for the Fe/Si MLF were performed by solving exactly a multireflection problem using the scattering matrix approach assuming various stoichiometries of a nonmagnetic spacer separating the antiferromagnetically coupled Fe layers. The simulated spectra of a model structure of FeSi2 or $\varepsilon$-FeSi as the spacer turned out to fail in explaining the experimental spectra of the Fe/Si MLF in both intensity and shape. Thus, the decisive disagreement between experimental and simulated MO and optical properties ruled out the hypothesis of FeSi2 and $\varepsilon$-FeSi as the nonmagnetic spacer. By supposing the spontaneous formation of a metallic ζ-FeSi, a reasonable agreement between experimental and simulated MO and optical spectra was obtained.