• Korean Journal of Materials Research
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• v.6 no.11
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• pp.1061-1066
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• 1996

RF magnetron reactive sputtering법으로 Fe75.5Zr8.3N16.2/SiO2(250$\AA$) 다층 박막을 FeZrN의 두께를 변화시키면서 제조하고, 제조된 박막을 진공 열처리하여 열처리 온도에 따른 포화자화, 보자력, 고주파에서의 투자율 그리고 열적 안정성을 조사하였다. Fe75.5Zr8.3N16.2/SiO2(250$\AA$) 다층박막은 FeZrN의 두께가 800$\AA$이상일 때 좋은 연자성을 나타내었다. Fe75.5Zr8.3N16.2/SiO2(250$\AA$)다층 박막을 45$0^{\circ}C$로 열처리 했을 때 포화자속밀도(1.08 T), 보자력 0.41 Oe, 1 MHz에서의 실효 투자율은 3000이상의 연자성을 나타내었다. 그 이유는 X-선 회절 분석 결과 열처리에 의해서 ZrN 미결정이 석출하여 $\alpha$-Fe 결정 성장이 억제되어 우수한 연자기적 성질이 나타난다고 판단된다. 이때 $\alpha$-Fe 입자 크기는 40-50$\AA$, ZrN의 입자 크기는 10-15$\AA$이다. 그리고 실효 투자율의 주파수 의존성에서 단층막에서는 5 MHz 이상에서 실효 투자율이 급격히 감소하는 경향을 보였으나, 다층막에서는 40MHz까지 실효 투자율이 1600이 되어 고주파에서의 연자성이 개선되었다.

• Advances in nano research
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• v.14 no.4
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• pp.355-362
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• 2023

Physical exercise, especially intense exercise and high intensity interval training (HIIT) by trampoline, can lead to muscle injuries. These effects can be reduced with intelligent products made of nanocomposite materials. Most of these nanocomposites are polymers reinforced with silicon dioxide, alumina, and titanium dioxide nanoparticles. This study presents a polymer nanocomposite reinforced with silica. As a result of the rapid reaction between tetraethyl orthosilicate and ammonia in the presence of citric acid and other agents, silica nanostructures were synthesized. By substituting bis (4-amino phenoxy) phenyl-triptycene in N, N-dimethylformamide with potassium carbonate, followed by catalytic reduction with hydrazine and Pd/C, the diamine monomer bis (4-amino phenoxy) phenyl-triptycene is prepared. We synthesized a new polyaromatic (imide) with triptycene unit by sol-gel method from aromatic diamines and dianhydride using pyridine as a condensation reagent in NMP. PI readily dissolves in solvents and forms robust and tough polymer films in situ. The FTIR and NMR techniques were used to determine the effects of SiO₂ on the sol-gel process and the structure of the synthesized nanocomposites. By using a simultaneous thermal analysis (DTA-TG) method, the appropriate thermal operation temperature was also determined. Through SEM analysis, the structure, shape, size, and specific surface area of pores were determined. Analysis of XRD results is used to determine how SiO₂ affects the crystallization of phases and the activation energy of crystallization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.859-864
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• 2000

Recently IR detecting devices using MEMS have been actively studied. Microbolometer, one of these devices, detects the change of resistivity as the change of temperature of the device by absorbing IR, IR absorbing materials for microbolometer should have high TCR value and low noise characteristics which depends on resistivity. We fabricated multi-layer VOx thin films to improve the IR detectivity of uncooled IR devices and analyzed IR absorbing characteristics. We fabricated multi-layer VOx thin films by RF reactive sputtering method on SiNx substrate and changed characteristics using the different thickness of V and V$_2$O$\_$5/ thin films. Then we annealed them under 300$\^{C}$. The TCR (Temperature Coefficient of Resistance) measurement was carried out to estimate the IR detectivity of multi-layer VOx thin films. XRD (X-Ray Diffraction) analysis was carried out to estimate the IR detectivity of multi-layer VOx thin films. ZXRD (X-Ray Diffraction) analysis was used to find out phases and structures of V and V$_2$O$\_$5/ thin films. AES (Auger Electron Spectroscopy) analysis was used to find out composition of multi-layer VOx thin films before and after annealing. We obtained the optimum thickness range of V and V$_2$O$\_$5/ thin films from the result of AES analysis. We changed the thickness of V$_2$O$\_$5/ about 20 to 150 $\AA$ and thickness of V about 10 to 20 $\AA$. As the result of this, TCR value of multi-layer VOx thin films was about -2%/k and the resistivity was ∼1Ωcm.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1696-1698
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• 1999

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• Korean Journal of Materials Research
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• v.15 no.2
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• pp.139-142
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• 2005

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.486-489
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• 2002

Temperature(T) dependence of the sheet resistance( $R_{$\square$}$) has been investigated on the c-axis oriented thin films of the (Bi2212/Bi2201) mixed crystal with different molar fractions. The $R_{$\square$}$-T superconducting characteristic deteriorated with reduction of the Bi2212 fraction, and almost disappears at 48 mol% where a superconductor-to-insulator transition took place, with the resistance on the normal state, RN, reaching 4.l㏀ at 80 K. This $R_{N}$ value is close to the universal quantum number, h/(2e)$^2$≡6.5㏀ predicted by the Kosterlitz-Thouless(KT) transition theory. The $R_{$\square$}$-T characteristics of the 48 mol% thin film can be elucidated as a competitive process of KT transition brought about by charge or vortex in the two-dimensional layer structure.e.

• Journal of the Korean Ceramic Society
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• v.44 no.10
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• pp.585-588
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• 2007

Silicon nitride films for an anti-reflection coating were deposited on silicon via RF magnetron sputtering using a $Si_3N4$ target. The best result was obtained at the sputtering condition of 340 W RF power, 5 mtorr Ar atmosphere, $100^{\circ}C$ substrate temperature. The films showed 7.9% reflectance minimum with 2.35 refractive index. 0.21 absorption coefficient at 66.6 nm thickness. The surface morphology showed a smooth and dense film with good adhesion to silicon surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.331-331
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• 2008

Transparent conductive oxide (TCO) are necessary as front electrode or anti-reflecting coating for increasing efficiency of LED and Photodiode. In this paper, aluminum-doped Zinc oxide films(AZO) were prepared by RF magnetron sputtering on Si substrate at room temperature with application of substrate bias from -60 to 60 V. Then annealed at temperature of 200, 300 and $400^{\circ}C$ for 1hr in $H_2$ ambient. Structural and electrical property of AZO thin films were investigated.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.10a
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• pp.67-74
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• 1998

Two kinds of polished and unpolished freestanding films prepared by DC plasma CVD method were impacted by SiC particles to understand erosion mechanism. Erosion damage caused by solid impact was characterized by surface profilometer, scanning electron microscopy and Raman spectroscopy. Gradually decrease of surface roughness and sharp reduction of crystallinity for unpolished CVD films were observed with increasing erosion time. It was found that smaller grains of the diamond were removed in early stage of erosion process and larger grains were eroded with further impingement. By introduction of re-growth method on polished diamond, further understanding of erosion mechanism was achieved. Most of the surface fractures were initiated at the grain boundary.