• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.792-795
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• 1988

Titanium dioxide antireflection (AR) Coating, which is deposited on Si substrates using an organotitanium solution by the spinning technique, has been studied. The coated films on Si substrates were subsequently heated to $450^{\circ}C$. The thickness and index of refraction of films were varied continuousely from $740{\AA}$ to $1380{\AA}$ and from 1.7 to 2.1 respectively as a function of heat treatment temperature and time. Silicon solar cells AR-coated by the spinning technique showed as much as 31% improvement in conversion efficiency over the uncoated cell.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1271-1273
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• 1993

$SiO_2$ and SiON films are formed by Laser CVD for inter-level dielectrics in submicron VLSI. This technique is noticeable that film formation can be done at low temperatures, below $300^{\circ}C$ with less damage. An ArF Excimer Laser with wave length of 193nm is used to excite and dissociate reactant gases. After film formation growth rate, refractive index, I-V curve, and step coverage characteristics of the films were evaluated.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.263-268
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• 2003

Precise thickness control and excellent properties of silicon nitride thin films are essential for the next-generation semiconductor and display devices. In this study, silicon nitride thin films were deposited by batch-type atomic layer deposition (ALD) method using $SiC1_4$ and $NH_3$ as the precursors at temperatures ranging from 500 to $600^{\circ}C$. Thin film deposition using a batch-type ALD reactor was a layer-by-layer atomic growth by self-limiting surface reactions, and the thickness of the deposited film can be controlled by the number of deposition cycles. The silicon nitride thin films deposited by ALD method exhibited composition, refractive index and wet etch rate similar with those of the thin films deposited by low-pressure chemical vapor deposition method at $760^{\circ}C$. The addition of pyridine mixed with precursors increased deposition rate by 50%, however, the films deposited with pyridine was readily oxidized owing to its unstable structure, which is unsuitable for the application to semiconductor or display devices.

• Journal of Surface Science and Engineering
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• v.48 no.5
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• pp.211-217
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• 2015

To fabricate white LED having a high color rendering index value, red color phosphor mixed with the green color phosphor together in the blue chip, namely the blue chips with RG phosphors packaging is most favorable for high power white LEDs. In our previous papers, we reported on successful syntheses of $Sr_{2-}$ $Si_5N_8:Eu^{2+}$ and $CaAlSiN_3$ phosphors for red phosphor. In this work, for high power green phosphor, greenemitting ternary nitride $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphor was synthesized in a high frequency induction furnace under $N_2$ gas atmosphere at temperatures up to $1400^{\circ}C$ using $EuF_3$ as a raw material for $Eu^{2+}$ dopant. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 250 - 500 nm, namely from UV to blue region with distinct enhanced emission spectrum peaking at ${\approx}530nm$.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.79-87
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• 1997

Anti-reflective and anti-static double layered films were prepared on the VDT panel by sol-gel spin-coating method. Their electrical, opticla, and mechanical properties were investigated. The outer SiO2 film with low re-fractive index was coated over the inner ATO(Antimony-doped Tin Oxide)-SiO2 film which was prepared by mixing ATO sol with SiO2 at molar ratio of 68:32 to satisfy the interference condition of double layers. The heat treatment was conducted at 45$0^{\circ}C$ for 30 min where residual organics were completely removed. The sheet resistance of ATO single layer showed the minimum value of 6$\times$107$\Omega$/$\square$ at 3 mol% addition of Sb and that of SiO2/ATO-SiO2 increased slightly with increasing SiO2 mol% up to 30 mol%, and then increased steeply to the value of 3$\times$108$\Omega$/$\square$ at 32 mol%. The reflectance of double layered films was about 0.64% at the wavelength of 550nm and the transmittance increased about 3.20%. The hardness of double layered films was almost the same as that of uncoated VDT panel, 471.4kg.f/mm2.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.6-10
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• 2001

In this study, we investigated the optical properties of sub-wavelength a-Si thin film transmission gratings, especially the polarization effect, the phase difference and the birefringence by using linearly polarized He-Ne laser beam (632.8nm). The a-Si transmission grating of the thickness $of < 0.1 \mum$ with four-type period($\Lambda = 0.4 \mum and 0.6 \mum$ for sub-wavelength and $\Lambda = 1.0 \mum and 1.4 \mum$ for above-wavelength) on quartz substrates have been fabricated using 50 KeV Ga+ Focused-Ion-Beam(FIB) Milling and $CF_4$Reactive-Ion-Etching(RIE) method. Finally, we obtained the trating array of a-Si thin film with a period $0.4 \mum, 0.6 \mum, 1.0 \mum, 1.4 \mum$ which have nearly equal finger spacing and width, sucessfully. Especially, for gratings with $\Lambda = 0.6 \mum(linewidth=0.25 \mum, linespace=0.35\mum), the \etamax at \theta_в=17.0^{\circ}$ is estimated to be 96%. As the results, we believe that the sub-wavelength grating arrayed a-Si thin film has the applicability as the optical device and components.

• Korean Journal of Environmental Biology
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• v.24 no.3
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• pp.294-299
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• 2006

Mt. Seokseong is located $37^{\circ}15'15'{\sim}37^{\circ}17'00'N$ in latitude at $127^{\circ}09'30'{\sim}127^{\circ}11'00'E$ in longitude in Yongin-si. As the result of cluster analysis, B site has 170 taxa of vascular plants, so it is the most abundant site in this area. And C site has 140 taxa of that, it is secondly abundant. But it has the highest similarity index (53.7%) between A site and B site. To construct natural resort for residents, it needed make thorned park just as hiking course, woods bathing site, aquatic place, pebble path, and natural garden path. And to protect ecological isolation of this area ecobridges must be constructed at Myeokjogogae and at Yongin Medical Hospital.

• Journal of Technologic Dentistry
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• v.26 no.1
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• pp.115-128
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• 2004

In this study, optical and mechanical properties were investigated with 4 kinds of commercial dental enamels. As a result of EDS analysis $SiO_2,\;Na_{2}O,\;Al_{2}O_3\;and\;K_{2}O$ were the main components of commercial dental enamels. In case of H specimen, content of $SiO_2\;and\;K_2O$ were more than that of another specimens. Starting powder and fired specimens were glass ceramics which were consist of amorphous phase and leucite (crystalline) phase. Crystallization did not occurred during firing process, since the XRD peak intensity was similar between starting powder and fired specimens. As a result of differential thermal analysis, $T_g$ and crystalline temperature was varied with composition in the range of $548\sim576^{\circ}C$ and $735\sim780^{\circ}C$ respectively. 0.5mm thickness dental enamel specimens showed sufficient translucent properties. However, transmittance and reflectance were lower than 5% result from scattering due to the refractive index difference between glass and crystalline phase. 3 point bending strength was in the range of 73.9$\sim$101.8MPa which was similar or slightly higher than enamel of natural teeth and Vickers hardness was higher than enamel of natural teeth more than 100.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.832-834
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• 1992

Using the PECVD method, the silicon nitride films were deposited by changing the $SiH_4/NH_3$ gas flow ratio from 0.2 to 1.4 at an interval of 0.2, AES, FTIR, and Spectroscopic Ellipsomter were used to analyze the film composition and structure, the refractive index, and the deposition rate. Also the C-V analysis was used to estimate the memory performance in the capacitor type MNOS memory devices, which utilized native oxide as the tunneling barrier, with the silicon nitride by the above deposition conditions. As a result, it was confirmed that the performance of MNOS memory devices with PECVD silicon nitride was comparable to that with LPCVD or APCVD silion nitride.

• The Korean Journal of Physiology and Pharmacology
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• v.15 no.4
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• pp.241-244
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• 2011

A lectin from the hemolymph of purse crab, Philyra pisum, was found to have anti-proliferative activity on human lung cancer cells by our laboratory. In this study, P. pisum lectin (PPL) was molecularly characterized including molecular mass, amino acid sequences, amino acid composition, and the effects of metal ions, temperature, and pH on the activity. We found that PPL showed mitogenic activity on human lymphocytes and BALB/c mouse splenocytes. The mitogenic activity (maximum stimulation index, $SI=9.57{\pm}0.59$) of PPL on human lymphocytes was higher than that of a standard well-known plant mitogen, concanavalin A (maximum $SI=8.80{\pm}0.59$). The mitogenic activity mediated by PPL is required for optimum dosing, and higher or lower concentrations caused decreases in mitogenic response. PPL also induced mitogenic activity on mouse splenocytes, however, the maximum SI ($1.77{\pm}0.09$) on mouse splenocytes of PPL was lower than that ($2.14{\pm}0.15$) of concanavalin A. In conclusion, PPL is a metal ion-dependent monomer lectin with mitogenic activity, and could be used as a lymphocyte or splenocyte stimulator.