• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.119-125
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• 1990

This paper describes fiber optic voltage sensor using EOM-BSO (Electro-Optic Modulator-Bismuth Silicon Oxcide). Transceiver has an electical/optical converter and an optical/electrical converter which consist of light emitting diode, PIN-PD, and electronic circuits. Multimode fiber cable of $100/140{\mu}m$ core/clad diameter is used for connecting the transceiver to fiber cable and fiber optic voltage sensor. Before our experiments, by applying the Maxwell equations and wave equations, We derive matrix equation on wave propagation in the BSO single crystal. And also we derive optimal equation on intensity modulation arising through an analyzer. According to experi-mental results, fiber optic voltage sensor has maximum $2.5{\%}$ error within the applied AC voltage of 800V. As the applied voltage increases, saturation values of voltage sensor also increase. This phenomenon is caused by optical rotatory power of BSO single crystal. And temperature dependence of sensitivity for fiber optical rotatory power of BSO single crystal. And temperature dependence of sensitivity for fiber optic voltage sensor in the temperature range from$-20^{\circ}C\to\60^{\circ}C$ are measured within ${\pm}0.6{\%}$. And frequency characteristics of the voltage sensor has good frequency characteristics from DC to 100kHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Journal of Food Hygiene and Safety
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• v.39 no.2
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• pp.72-82
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• 2024

This study aimed to develop a scientifically and systematically standardized xylooligosaccharide analytical method that can be applied to products with various formulations. The analysis method was conducted using HPLC with Cadenza C₁₈ column, involving pre-column derivatization with 1-phenyl-3-methyl-5-pyrazoline (PMP) and UV detection at 254 nm. The xylooligosaccharide content was analyzed by converting xylooligosaccharide into xylose through acid hydrolysis. The pre-treated methods were compared and evaluated by varying sonication time, acid hydrolysis time, and concentration. Optimal equipment conditions were achieved with a mobile phase consisting of 20 mM potassium phosphate buffer (pH 6)-acetonitrile (78:22, v/v) through isocratic elution at a flow rate of 0.5 mL/min (254 nm). Furthermore, we validated the advanced standardized analysis method to support the suitability of the proposed analytical procedure such as specificity, linearity, detection limits (LOD), quantitative limits (LOQ), accuracy, and precision. The standardized analysis method is now in use for monitoring relevant health-functional food products available in the market. Our results have demonstrated that the standardized analysis method is expected to enhance the reliability of quality control for healthy functional foods containing xylooligosaccharide.